Photolithography Overview 9/29/03 Brainerd/photoclass/ECE580/Overvie w/overview

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "Photolithography Overview 9/29/03 Brainerd/photoclass/ECE580/Overvie w/overview"

Transcription

1 1

2 Moore s law only holds due to photolithography advancements in reducing linewidths 2

3 All processing to create electric components and circuits rely on photolithography 3

4 Typical MOS transistor NMOS = n-type carrier across gate 4

5 Transistor fabrication N-MOS P-MOS 5

6 Interconnect 6

7 Chapter 1 sections 1-7 : 7

8 8

9 Basic process flow 9

10 10

11 Wafer clean: removal of Organics and metalics 11

12 HMDS Hexamethyldisilazane Prime: Replaces surface adsorbed H 2 O and gives off Ammonia. This material produces a bond with the wafer surface creating a polar surface ( electrostatic). No surface wetting by Photoresist occurs on an un-treated SiO2 surface with these bonded hydroxyl groups. Basically the Photoresist is hydrophobic and will not adhere to a hydrophilic surface. The HMDS is a hydroxyl getter and creates a hydrophobic surface, which the Photoresist had good adhesion. BOTTOMLINE: Priming adjusts the surface energy of the wafer so that it is comparable to the surface energy of the Photoresist. 12

13 Photoresist 13

14 Spin Coat 14

15 Spin Coat: RPMs: Spread or cast, Ramp,and terminal 15

16 Spin Coat 16

17 Spin Coat 17

18 Softbake Removes solvent from film and stablizing coating: typical: 90C to 120C I-line DNQ 100C to 130C: DUV CAR 18

19 Alignment 19

20 Photoresist Exposure DNQ photoresist actinic radiation 20

21 DUV: Photoresist Exposure wavelengths below 200nm All use excimer lasers Note 248nm = KrF laser 21

22 Photoresist Exposure 22

23 Exposure and feature type 23

24 Positive and Negative Tone Photoresists 24

25 Contact/Proximity/Projection printing 25

26 Projection printing: Typical stepper 26

27 Projection printing: Numerical Aperture 27

28 Projection printing: High NA lens 28

29 Projection printing: Resolution 29

30 Projection printing: Depth of Focus 30

31 Projection printing: Depth of Focus 31

32 Optical lithography Performance: Resolution NA and wavelength coherent systems 32

33 Photoresist Standing waves: reflection/interference 33

34 Photoresist Post Exposure Bake Purposes: key idea DNQ/Novolak positive tone: diffusion bake : Diffusion of PAC to improve CD contact by removing standing waves. PAG/Novolak negative tone: (acid hardened resist: AHR) Diffusion of H+ ion to react with polymer causing polymer to become insoluble.( PAG: Triazine) DUV PAG/Blocking group/phs: Diffusion of H+ ion to react with blocking group causing PHS to become soluble 34

35 Photoresist exposure and dissolution Key ideas: DNQ and Novolak Resin I-line 365nm system 1. DNQ or Photo Active Compound PAC is an Inhibitor: It inhibits Development rate when present! There is very little dissolution in an OH solution. 2. Photolytic conversion of DNQ to ICA in by exposure to Near UV radiation ( Hg lamp) increases development rate PAG and Poly Hydroxystyrene PHS DUV CAR 248nm system 1. PAG Photo-Acid-Generator creates an Acid (H+) upon exposure to 248nm radiation. There is very little dissolution in an OH solution. 2. The addition of thermal energy using a PEB bake causes the H+ to diffuse and react with the blocking group, causing the exposed area to become soluble. 35

36 Photoresist Development Threshold dose Develop exposed photoresist in TMAH (2.38%) basic solution 36

37 Photoresist CDs Dose Vs linewidth Polysilicon Linewidth DUV photoresist 0 Focus offset. 0.7 Photoresist linewidth CD um y = x R 2 = ACEN ALL ALR AUL AUR ZCEN ZLL ZLR ZUL ZUR Linear (AUL) Exposure Dose 37

38 Photoresist CDs Dose Vs Spacewidth Contact CD Vs Exposure Dose Mj/cm2 IX405 i-line Photoresist Nominal 0.80u 0.95 Contact Photoresist CD microns CEN DI Linear (201CEN DI) y = x R 2 = ASML 5500/100C Exposure dose mj/cm2 38

39 I-line Positive tone Photoresist 365nm Line dense isolated line isolated space contact 39

40 I-line negative tone Photoresist 365nm 40

41 DUV Photoresist KrF 248nm 41

42 DUV Photoresist OH contamination issue 42

43 Photoresist Post-develop bake Hardbake Improve adhesion of photoresist for subsequent wet processing: Wet etches: BHF, Acetic acid, H 2 O 2 Plateup: Au or Cu Increasing hardbake temperature will cause photoresist patterns to flow. 43

44 Photoresist Etch 44

45 Photoresist Etch: RIE 45

46 Photoresist removal: Strip Post etch 46

Photolithography II ( Part 1 )

Photolithography II ( Part 1 ) 1 Photolithography II ( Part 1 ) Chapter 14 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Bjørn-Ove Fimland, Department of Electronics and Telecommunication, Norwegian University of Science

More information

Chapter 3 : ULSI Manufacturing Technology - (c) Photolithography

Chapter 3 : ULSI Manufacturing Technology - (c) Photolithography Chapter 3 : ULSI Manufacturing Technology - (c) Photolithography 1 Reference 1. Semiconductor Manufacturing Technology : Michael Quirk and Julian Serda (2001) 2. - (2004) 3. Semiconductor Physics and Devices-

More information

Methodology of modeling and simulating line-end shortening effects in deep-uv resist

Methodology of modeling and simulating line-end shortening effects in deep-uv resist Methodology of modeling and simulating line-end shortening effects in deep-uv resist Mosong Cheng*, Ebo Croffie, Andrew Neureuther Electronics Research Laboratory Department of Electrical Engineering and

More information

Introduction. Photoresist : Type: Structure:

Introduction. Photoresist : Type: Structure: Photoresist SEM images of the morphologies of meso structures and nanopatterns on (a) a positively nanopatterned silicon mold, and (b) a negatively nanopatterned silicon mold. Introduction Photoresist

More information

Pattern Transfer- photolithography

Pattern Transfer- photolithography Pattern Transfer- photolithography DUV : EUV : 13 nm 248 (KrF), 193 (ArF), 157 (F 2 )nm H line: 400 nm I line: 365 nm G line: 436 nm Wavelength (nm) High pressure Hg arc lamp emission Ref: Campbell: 7

More information

Photolithography 光刻 Part II: Photoresists

Photolithography 光刻 Part II: Photoresists 微纳光电子材料与器件工艺原理 Photolithography 光刻 Part II: Photoresists Xing Sheng 盛兴 Department of Electronic Engineering Tsinghua University xingsheng@tsinghua.edu.cn 1 Photolithography 光刻胶 负胶 正胶 4 Photolithography

More information

Development of Lift-off Photoresists with Unique Bottom Profile

Development of Lift-off Photoresists with Unique Bottom Profile Transactions of The Japan Institute of Electronics Packaging Vol. 8, No. 1, 2015 [Technical Paper] Development of Lift-off Photoresists with Unique Bottom Profile Hirokazu Ito, Kouichi Hasegawa, Tomohiro

More information

MEEN Nanoscale Issues in Manufacturing. Lithography Lecture 1: The Lithographic Process

MEEN Nanoscale Issues in Manufacturing. Lithography Lecture 1: The Lithographic Process MEEN 489-500 Nanoscale Issues in Manufacturing Lithography Lecture 1: The Lithographic Process 1 Discuss Reading Assignment 1 1 Introducing Nano 2 2 Size Matters 3 3 Interlude One-The Fundamental Science

More information

Top down and bottom up fabrication

Top down and bottom up fabrication Lecture 24 Top down and bottom up fabrication Lithography ( lithos stone / graphein to write) City of words lithograph h (Vito Acconci, 1999) 1930 s lithography press Photolithography d 2( NA) NA=numerical

More information

Fabrication Engineering at the Micro- and Nanoscale, by Stephen Campbell, 4 th Edition, Oxford University Press

Fabrication Engineering at the Micro- and Nanoscale, by Stephen Campbell, 4 th Edition, Oxford University Press Fabrication Engineering at the Micro- and Nanoscale, by Stephen Campbell, 4 th Edition, Oxford University Press Errata, by Chris Mack, chris@lithoguru.com While teaching out of this book at the University

More information

Simulation Based Formulation of a Non-Chemically Amplified Resist for 257 nm Laser Mask Fabrication

Simulation Based Formulation of a Non-Chemically Amplified Resist for 257 nm Laser Mask Fabrication Simulation Based Formulation of a Non-Chemically Amplified Resist for 257 nm Laser Mask Fabrication Benjamen M. Rathsack, Cyrus E. Tabery, Timothy B. Stachowiak, Jeff Albelo 2 and C. Grant Willson Department

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Ali Javey. Fall 2009.

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Ali Javey. Fall 2009. UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE143 Professor Ali Javey Fall 2009 Exam 1 Name: SID: Closed book. One sheet of notes is allowed.

More information

Effect of PAG Location on Resists for Next Generation Lithographies

Effect of PAG Location on Resists for Next Generation Lithographies Effect of PAG Location on Resists for Next Generation Lithographies ber Research Group Materials Science & Engineering Ithaca, NY 14853 Development Trends in Microlithography 10 Contact Printer Architectures

More information

EFFECT OF NANOSCALE CONFINEMENT ON THE PHYSICAL PROPERTIES OF POLYMER THIN FILMS

EFFECT OF NANOSCALE CONFINEMENT ON THE PHYSICAL PROPERTIES OF POLYMER THIN FILMS EFFECT OF NANOSCALE CONFINEMENT ON THE PHYSICAL PROPERTIES OF POLYMER THIN FILMS A Thesis Presented to The Academic Faculty by Lovejeet Singh In Partial Fulfillment of the Requirements for the Degree Doctor

More information

Lecture 8. Photoresists and Non-optical Lithography

Lecture 8. Photoresists and Non-optical Lithography Lecture 8 Photoresists and Non-optical Lithography Reading: Chapters 8 and 9 and notes derived from a HIGHLY recommended book by Chris Mack, Fundamental Principles of Optical Lithography. Any serious student

More information

Fabrication of Sub-Quarter-Micron Grating Patterns by Employing Lithography

Fabrication of Sub-Quarter-Micron Grating Patterns by Employing Lithography MCROU,!~'O~C ELSEVER Microelectronic Engineering 46 (1999) 173-177 Fabrication of Sub-Quarter-Micron Grating Patterns by Employing Lithography DUV Holographic L. A. Wang*, C. H. Lin and J. H. Chen nstitute

More information

Overview of the main nano-lithography techniques

Overview of the main nano-lithography techniques Overview of the main nano-lithography techniques Soraya Sangiao sangiao@unizar.es Outline Introduction: Nanotechnology. Nano-lithography techniques: Masked lithography techniques: Photolithography. X-ray

More information

UNIT 3. By: Ajay Kumar Gautam Asst. Prof. Dev Bhoomi Institute of Technology & Engineering, Dehradun

UNIT 3. By: Ajay Kumar Gautam Asst. Prof. Dev Bhoomi Institute of Technology & Engineering, Dehradun UNIT 3 By: Ajay Kumar Gautam Asst. Prof. Dev Bhoomi Institute of Technology & Engineering, Dehradun 1 Syllabus Lithography: photolithography and pattern transfer, Optical and non optical lithography, electron,

More information

Improving resist resolution and sensitivity via electric-field enhanced postexposure baking

Improving resist resolution and sensitivity via electric-field enhanced postexposure baking Improving resist resolution and sensitivity via electric-field enhanced postexposure baking Mosong Cheng, a) Lei Yuan, Ebo Croffie, and Andrew Neureuther Electronics Research Laboratory, University of

More information

IC Fabrication Technology

IC Fabrication Technology IC Fabrication Technology * History: 1958-59: J. Kilby, Texas Instruments and R. Noyce, Fairchild * Key Idea: batch fabrication of electronic circuits n entire circuit, say 10 7 transistors and 5 levels

More information

DUV Positive Photoresists

DUV Positive Photoresists Journal of Photopolymer Science and Technology Volume 5, Number 1(1992) 207-216 Factors Affecting the Performance of Chemically DUV Positive Photoresists Amplified James W. Thackeray, Theodore H. Fedynyshyn,

More information

Introduction to Photolithography

Introduction to Photolithography http://www.ichaus.de/news/72 Introduction to Photolithography Photolithography The following slides present an outline of the process by which integrated circuits are made, of which photolithography is

More information

Copyright 2000 by the Society of Photo-Optical Instrumentation Engineers.

Copyright 2000 by the Society of Photo-Optical Instrumentation Engineers. Copyright 2 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Photomask and X-Ray Mask Technology VII SPIE Vol. 466, pp. 172-179. It is made available

More information

A Physically Based Model for Predicting Volume Shrinkage in Chemically Amplified Resists

A Physically Based Model for Predicting Volume Shrinkage in Chemically Amplified Resists A Physically Based Model for Predicting Volume Shrinkage in Chemically Amplified Resists Nickhil Jakatdar 1, Junwei Bao, Costas J. Spanos Dept. of Electrical Engineering and Computer Sciences, University

More information

EE C245 ME C218 Introduction to MEMS Design Fall 2007

EE C245 ME C218 Introduction to MEMS Design Fall 2007 EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 5: ALD,

More information

High Optical Density Photomasks For Large Exposure Applications

High Optical Density Photomasks For Large Exposure Applications High Optical Density Photomasks For Large Exposure Applications Dan Schurz, Warren W. Flack, Makoto Nakamura Ultratech Stepper, Inc. San Jose, CA 95134 Microlithography applications such as advanced packaging,

More information

Silicon VLSI Technology. Fundamentals, Practice and Modeling

Silicon VLSI Technology. Fundamentals, Practice and Modeling Text Book: Silicon VLSI Technology Fundamentals, Practice and Modeling Authors: J. D. Plummer, M. D. Deal, and P. B. Griffin Photolithography (Chap. 1) Basic lithography process Apply photoresist Patterned

More information

Lithographic Effects Of Acid Diffusion In Chemically Amplified Resists

Lithographic Effects Of Acid Diffusion In Chemically Amplified Resists INTERFACE '95 This paper was published in the proceedings of the OCG Microlithography Seminar, Interface '95, pp. 217-228. It is made available as an electronic reprint with permission of OCG Microelectronic

More information

Lecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen

Lecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen Lecture 150 Basic IC Processes (10/10/01) Page 1501 LECTURE 150 BASIC IC PROCESSES (READING: TextSec. 2.2) INTRODUCTION Objective The objective of this presentation is: 1.) Introduce the fabrication of

More information

Techniken der Oberflächenphysik (Techniques of Surface Physics)

Techniken der Oberflächenphysik (Techniques of Surface Physics) Techniken der Oberflächenphysik (Techniques of Surface Physics) Prof. Yong Lei & Dr. Yang Xu (& Liying Liang) Fachgebiet 3D-Nanostrukturierung, Institut für Physik Contact: yong.lei@tu-ilmenau.de; yang.xu@tu-ilmenau.de;

More information

Lithography and Etching

Lithography and Etching Lithography and Etching Victor Ovchinnikov Chapters 8.1, 8.4, 9, 11 Previous lecture Microdevices Main processes: Thin film deposition Patterning (lithography) Doping Materials: Single crystal (monocrystal)

More information

Carrier Transport by Diffusion

Carrier Transport by Diffusion Carrier Transport by Diffusion Holes diffuse ÒdownÓ the concentration gradient and carry a positive charge --> hole diffusion current has the opposite sign to the gradient in hole concentration dp/dx p(x)

More information

Optical Proximity Correction

Optical Proximity Correction Optical Proximity Correction Mask Wafer *Auxiliary features added on mask 1 Overlay Errors + + alignment mask wafer + + photomask plate Alignment marks from previous masking level 2 (1) Thermal run-in/run-out

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 143 Fall 2008 Exam 1 Professor Ali Javey Answer Key Name: SID: 1337 Closed book. One sheet

More information

Wet Chemical Processing with Megasonics Assist for the Removal of Bumping Process Photomasks

Wet Chemical Processing with Megasonics Assist for the Removal of Bumping Process Photomasks Wet Chemical Processing with Megasonics Assist for the Removal of Bumping Process Photomasks Hongseong Sohn and John Tracy Akrion Systems 6330 Hedgewood Drive, Suite 150 Allentown, PA 18106, USA Abstract

More information

Resist Materials Issues beyond 22 nm-hp Patterning for EUV Lithography

Resist Materials Issues beyond 22 nm-hp Patterning for EUV Lithography Resist Materials Issues beyond 22 nm-hp Patterning for EUV Lithography February 26, 2009 Shinji Tarutani FUJIFILM Corporation Research & Development Management Headquarters Electronic Materials Research

More information

Nanostructures Fabrication Methods

Nanostructures Fabrication Methods Nanostructures Fabrication Methods bottom-up methods ( atom by atom ) In the bottom-up approach, atoms, molecules and even nanoparticles themselves can be used as the building blocks for the creation of

More information

Exploration of non-chemically amplified resists based on chain-scission mechanism for 193 nm lithography

Exploration of non-chemically amplified resists based on chain-scission mechanism for 193 nm lithography Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 2010 Exploration of non-chemically amplified resists based on chain-scission mechanism for 193 nm lithography

More information

Photoresist Profile. Undercut: negative slope, common for negative resist; oxygen diffusion prohibits cross-linking; good for lift-off.

Photoresist Profile. Undercut: negative slope, common for negative resist; oxygen diffusion prohibits cross-linking; good for lift-off. Photoresist Profile 4-15 Undercut: negative slope, common for negative resist; oxygen diffusion prohibits cross-linking; good for lift-off undercut overcut Overcut: positive slope, common to positive resist,

More information

Resist material for negative tone development process

Resist material for negative tone development process Resist material for negative tone development process FUJIFILM Corporation Electronic Materials Research Laboratories P-1 Outline 1. Advantages of negative tone imaging for DP 2. Process maturity of negative

More information

Photomasks. Photolithography Evolution 9/11/2004 ECE580- MPE/MASKS/PHOTOMASKS.PPT

Photomasks. Photolithography Evolution 9/11/2004 ECE580- MPE/MASKS/PHOTOMASKS.PPT Photolithography Evolution 1 : Evolution 2 Photomasks Substrates: Type : thermal expansion Chrome Pellicles Mask: OPC and PSM Fabrication: E-Beam or Laser 3 Photomask Information Websites: http://www.photronics.com/internet/corpcomm/publications/basics101/basics.

More information

Chapter 2. Design and Fabrication of VLSI Devices

Chapter 2. Design and Fabrication of VLSI Devices Chapter 2 Design and Fabrication of VLSI Devices Jason Cong 1 Design and Fabrication of VLSI Devices Objectives: To study the materials used in fabrication of VLSI devices. To study the structure of devices

More information

Lecture 0: Introduction

Lecture 0: Introduction Lecture 0: Introduction Introduction q Integrated circuits: many transistors on one chip q Very Large Scale Integration (VLSI): bucketloads! q Complementary Metal Oxide Semiconductor Fast, cheap, low power

More information

4FNJDPOEVDUPS 'BCSJDBUJPO &UDI

4FNJDPOEVDUPS 'BCSJDBUJPO &UDI 2010.5.4 1 Major Fabrication Steps in CMOS Process Flow UV light oxygen Silicon dioxide Silicon substrate Oxidation (Field oxide) photoresist Photoresist Coating Mask exposed photoresist Mask-Wafer Exposed

More information

Far IR Gas Lasers microns wavelengths, THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like

Far IR Gas Lasers microns wavelengths, THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like Far IR Gas Lasers 10-1500 microns wavelengths, 300 10 THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like microwave signal than light Created by Molecular vibronic

More information

520/ Photolithography (II) Andreas G. Andreou

520/ Photolithography (II) Andreas G. Andreou 520/580.495 Photolithography (II) Andreas G. Andreou Lecture notes from Positive Photoresists and Photolithography by R. Darling http://www.engr.washington.edu/~cam/processes A.G. Andreou 2000 1 Lecture

More information

nmos IC Design Report Module: EEE 112

nmos IC Design Report Module: EEE 112 nmos IC Design Report Author: 1302509 Zhao Ruimin Module: EEE 112 Lecturer: Date: Dr.Zhao Ce Zhou June/5/2015 Abstract This lab intended to train the experimental skills of the layout designing of the

More information

FEM Modeling of Shrinkage Effects in Negative Tone Photoresists

FEM Modeling of Shrinkage Effects in Negative Tone Photoresists FEM Modeling of Shrinkage Effects in Negative Tone Photoresists Master s Thesis/Masterarbeit in the field of Computational Engineering by Sean Dominic D Silva Department Informatik Lehrstuhl für Informatik

More information

Discussions start next week Labs start in week 3 Homework #1 is due next Friday

Discussions start next week Labs start in week 3 Homework #1 is due next Friday EECS141 1 Discussions start next week Labs start in week 3 Homework #1 is due next Friday Everyone should have an EECS instructional account Use cory, quasar, pulsar EECS141 2 1 CMOS LEAKAGE CHARACTERIZATION

More information

EE C245 ME C218 Introduction to MEMS Design Fall 2010

EE C245 ME C218 Introduction to MEMS Design Fall 2010 Lecture Outline EE C245 ME C28 Introduction to MEMS Design Fall 200 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720

More information

Swing Curves. T h e L i t h o g r a p h y T u t o r (Summer 1994) Chris A. Mack, FINLE Technologies, Austin, Texas

Swing Curves. T h e L i t h o g r a p h y T u t o r (Summer 1994) Chris A. Mack, FINLE Technologies, Austin, Texas T h e L i t h o g r a p h y T u t o r (Summer 1994) Swing Curves Chris A. Mack, FINLE Technologies, Austin, Texas In the last edition of this column, we saw that exposing a photoresist involves the propagation

More information

EE 434 Lecture 7. Process Technology

EE 434 Lecture 7. Process Technology EE 434 Lecture 7 Process Technology Quiz 4 How many wafers can be obtained from a 2m pull? Neglect the material wasted in the kerf used to separate the wafers. 2m And the number is. 1 8 3 5 6 4 9 7 2 1

More information

Lithography Challenges Moore s Law Rising Costs and Challenges of Advanced Patterning

Lithography Challenges Moore s Law Rising Costs and Challenges of Advanced Patterning Lithography Challenges Moore s Law Rising Costs and Challenges of Advanced Patterning SEMI Texas Spring Forum May 21, 2013 Austin, Texas Author / Company / Division / Rev. / Date A smartphone today has

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Ali Javey. Spring 2009.

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Professor Ali Javey. Spring 2009. UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE143 Professor Ali Javey Spring 2009 Exam 1 Name: SID: Closed book. One sheet of notes is allowed.

More information

Title: ASML Stepper Semiconductor & Microsystems Fabrication Laboratory Revision: B Rev Date: 12/21/2010

Title: ASML Stepper Semiconductor & Microsystems Fabrication Laboratory Revision: B Rev Date: 12/21/2010 Approved by: Process Engineer / / / / Equipment Engineer 1 SCOPE The purpose of this document is to detail the use of the ASML PAS 5500 Stepper. All users are expected to have read and understood this

More information

J. Photopolym. Sci. Technol., Vol. 22, No. 5, Fig. 1. Orthogonal solvents to conventional process media.

J. Photopolym. Sci. Technol., Vol. 22, No. 5, Fig. 1. Orthogonal solvents to conventional process media. originates from the limited number of options regarding orthogonal solvents, i.e. solvents that do not dissolve or adversely damage a pre-deposited organic materials layer. The simplest strategy to achieve

More information

5. Photochemistry of polymers

5. Photochemistry of polymers 5. Photochemistry of polymers 5.1 Photopolymerization and cross-linking Photopolymerization The fundamental principle of photopolymerization is based on the photoinduced production of a reactive species,

More information

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems

More information

EE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing

EE115C Winter 2017 Digital Electronic Circuits. Lecture 3: MOS RC Model, CMOS Manufacturing EE115C Winter 2017 Digital Electronic Circuits Lecture 3: MOS RC Model, CMOS Manufacturing Agenda MOS Transistor: RC Model (pp. 104-113) S R on D CMOS Manufacturing Process (pp. 36-46) S S C GS G G C GD

More information

Far IR (FIR) Gas Lasers microns wavelengths, THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like

Far IR (FIR) Gas Lasers microns wavelengths, THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like Far IR (FIR) Gas Lasers 10-1500 microns wavelengths, 300 10 THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like microwave signal than light Created by Molecular vibronic

More information

Composition and Photochemical Mechanisms of Photoresists

Composition and Photochemical Mechanisms of Photoresists OpenStax-CNX module: m25525 1 Composition and Photochemical Mechanisms of Photoresists Andrew R. Barron This work is produced by OpenStax-CNX and licensed under the Creative Commons Attribution License

More information

Current Status of Inorganic Nanoparticle Photoresists

Current Status of Inorganic Nanoparticle Photoresists Prof. Christopher K. ber Department of Materials Science and Engineering, Cornell University, Ithaca NY Current Status of Inorganic Nanoparticle Photoresists Markos Trikeriotis, Marie Krysak, Yeon Sook

More information

Recent progress in nanoparticle photoresist development for EUV lithography

Recent progress in nanoparticle photoresist development for EUV lithography Recent progress in nanoparticle photoresist development for EUV lithography Kazuki Kasahara ab, Vasiliki Kosma b, Jeremy Odent b, Hong Xu b, Mufei Yu b, Emmanuel P. Giannelis b, Christopher K. Ober b a

More information

Chapter 3 Basics Semiconductor Devices and Processing

Chapter 3 Basics Semiconductor Devices and Processing Chapter 3 Basics Semiconductor Devices and Processing Hong Xiao, Ph. D. www2.austin.cc.tx.us/hongxiao/book.htm Hong Xiao, Ph. D. www2.austin.cc.tx.us/hongxiao/book.htm 1 Objectives Identify at least two

More information

Lecture 14 Advanced Photolithography

Lecture 14 Advanced Photolithography Lecture 14 Advanced Photolithography Chapter 14 Wolf and Tauber 1/74 Announcements Term Paper: You are expected to produce a 4-5 page term paper on a selected topic (from a list). Term paper contributes

More information

Study on Improved Resolution of Thick Film Resist (Verification by Simulation)

Study on Improved Resolution of Thick Film Resist (Verification by Simulation) Study on Improved Resolution of Thick Film Resist (Verification by Simulation) Yoshihisa Sensu, Atsushi Sekiguchi, Yasuhiro Miyake Litho Tech Japan Corporation 2-6-6 Namiki, Kawaguchi, Saitama, 332-0034,

More information

Copyright 1999 by the Society of Photo-Optical Instrumentation Engineers.

Copyright 1999 by the Society of Photo-Optical Instrumentation Engineers. Copyright 1999 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Advances in Resist Technology and Processing XVI, SPIE Vol. 3678, pp. 1-1011. It

More information

Copyright 1999 by the Society of Photo-Optical Instrumentation Engineers.

Copyright 1999 by the Society of Photo-Optical Instrumentation Engineers. Copyright 1999 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Lithography for Semiconductor Manufacturing SPIE Vol. 3741, pp. 148-160. It is made

More information

Far IR (FIR) Gas Lasers microns wavelengths, THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like

Far IR (FIR) Gas Lasers microns wavelengths, THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like Far IR (FIR) Gas Lasers 10-1500 microns wavelengths, 300 10 THz frequency Called Terahertz lasers or FIR lasers At this wavelength behaves more like microwave signal than light Created by Molecular vibronic

More information

EE143 LAB. Professor N Cheung, U.C. Berkeley

EE143 LAB. Professor N Cheung, U.C. Berkeley EE143 LAB 1 1 EE143 Equipment in Cory 218 2 Guidelines for Process Integration * A sequence of Additive and Subtractive steps with lateral patterning Processing Steps Si wafer Watch out for materials compatibility

More information

EE141- Spring 2003 Lecture 3. Last Lecture

EE141- Spring 2003 Lecture 3. Last Lecture - Spring 003 Lecture 3 IC Manufacturing 1 Last Lecture Design Metrics (part 1) Today Design metrics (wrap-up) IC manufacturing 1 Administrivia Discussion sessions start this week. Only one this week (Dejan

More information

A Parameter Extraction Framework for DUV Lithography Simulation

A Parameter Extraction Framework for DUV Lithography Simulation A Parameter Extraction Framework for DUV Lithography Simulation Nickhil Jakatdar 1, Junwei Bao, Costas J. Spanos Dept. of Electrical Engineering and Computer Sciences, University of California at Berkeley,

More information

Chen et al. (45) Date of Patent: Dec. 5, (54) EFFECTIVE PHOTORESIST STRIPPING (56) References Cited

Chen et al. (45) Date of Patent: Dec. 5, (54) EFFECTIVE PHOTORESIST STRIPPING (56) References Cited (12) United States Patent USOO7144673B2 (10) Patent No.: US 7,144.673 B2 Chen et al. (45) Date of Patent: Dec. 5, 2006 (54) EFFECTIVE PHOTORESIST STRIPPING (56) References Cited PROCESS FOR HIGH DOSAGE

More information

Next: 193nm Lithography

Next: 193nm Lithography Lecture 16 Chemical Engineering for Micro/Nano Fabrication Next: 193nm Lithography Absorption coefficient [1/µm] Absorption of Photoresist Polymers 2.8 Poly-(4-hydroxystyrene) 2.4 Meta-cresol novolak 2.0

More information

EE C245 ME C218 Introduction to MEMS Design

EE C245 ME C218 Introduction to MEMS Design EE C245 ME C218 Introduction to MEMS Design Fall 2008 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 6: Process

More information

Dainippon Screen Mfg. Co., Ltd , Takamiya, Hikone, Shiga , Japan. IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium

Dainippon Screen Mfg. Co., Ltd , Takamiya, Hikone, Shiga , Japan. IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium Solid State Phenomena Vols. 145-146 (2009) pp 285-288 Online available since 2009/Jan/06 at www.scientific.net (2009) Trans Tech Publications, Switzerland doi:10.4028/www.scientific.net/ssp.145-146.285

More information

Fabrication Technology, Part I

Fabrication Technology, Part I EEL5225: Principles of MEMS Transducers (Fall 2004) Fabrication Technology, Part I Agenda: Microfabrication Overview Basic semiconductor devices Materials Key processes Oxidation Thin-film Deposition Reading:

More information

Functional Materials for Advanced Patterning Robert D. Allen. IBM Almaden Research Center

Functional Materials for Advanced Patterning Robert D. Allen. IBM Almaden Research Center Functional Materials for Advanced Patterning Robert D. Allen Business Unit or Product Name IBM Almaden Research Center 2003 IBM Corporation Resists/Materials for Advanced Patterning Trends in Lithography

More information

Figure 1: Graphene release, transfer and stacking processes. The graphene stacking began with CVD

Figure 1: Graphene release, transfer and stacking processes. The graphene stacking began with CVD Supplementary figure 1 Graphene Growth and Transfer Graphene PMMA FeCl 3 DI water Copper foil CVD growth Back side etch PMMA coating Copper etch in 0.25M FeCl 3 DI water rinse 1 st transfer DI water 1:10

More information

CHAPTER 6: Etching. Chapter 6 1

CHAPTER 6: Etching. Chapter 6 1 Chapter 6 1 CHAPTER 6: Etching Different etching processes are selected depending upon the particular material to be removed. As shown in Figure 6.1, wet chemical processes result in isotropic etching

More information

Techniques for directly measuring the absorbance of photoresists at EUV wavelengths

Techniques for directly measuring the absorbance of photoresists at EUV wavelengths Techniques for directly measuring the absorbance of photoresists at EUV wavelengths Manish Chandhok, a Heidi Cao, a Wang Yueh, a Eric Gullikson, b Robert Brainard, c Stewart Robertson c a Intel Corporation,

More information

Supplementary Information

Supplementary Information Supplementary Information Experimental Section Hybrid Nanoparticle Synthesis The hafnium nanoparticles surface-modified with methacrylic acid (MAA, Sigma Aldrich, 99%), trans 2, 3-dimethylacrylic acid

More information

Nano fabrication by e-beam lithographie

Nano fabrication by e-beam lithographie Introduction to nanooptics, Summer Term 2012, Abbe School of Photonics, FSU Jena, Prof. Thomas Pertsch Nano fabrication by e-beam lithographie Lecture 14 1 Electron Beam Lithography - EBL Introduction

More information

Woo Jin Hyun, Ethan B. Secor, Mark C. Hersam, C. Daniel Frisbie,* and Lorraine F. Francis*

Woo Jin Hyun, Ethan B. Secor, Mark C. Hersam, C. Daniel Frisbie,* and Lorraine F. Francis* Woo Jin Hyun, Ethan B. Secor, Mark C. Hersam, C. Daniel Frisbie,* and Lorraine F. Francis* Dr. W. J. Hyun, Prof. C. D. Frisbie, Prof. L. F. Francis Department of Chemical Engineering and Materials Science

More information

Thin Wafer Handling Challenges and Emerging Solutions

Thin Wafer Handling Challenges and Emerging Solutions 1 Thin Wafer Handling Challenges and Emerging Solutions Dr. Shari Farrens, Mr. Pete Bisson, Mr. Sumant Sood and Mr. James Hermanowski SUSS MicroTec, 228 Suss Drive, Waterbury Center, VT 05655, USA 2 Thin

More information

EE-612: Lecture 22: CMOS Process Steps

EE-612: Lecture 22: CMOS Process Steps EE-612: Lecture 22: CMOS Process Steps Mark Lundstrom Electrical and Computer Engineering Purdue University West Lafayette, IN USA Fall 2006 NCN www.nanohub.org Lundstrom EE-612 F06 1 outline 1) Unit Process

More information

Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process

Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process Mandar Bhave, Kevin Edwards, Carlton Washburn Brewer Science, Inc., 2401 Brewer Dr., Rolla, MO 65401,

More information

Micro- and Nano-Technology... for Optics

Micro- and Nano-Technology... for Optics Micro- and Nano-Technology...... for Optics U.D. Zeitner Fraunhofer Institut für Angewandte Optik und Feinmechanik Jena Today: 1. Introduction E. Bernhard Kley Institute of Applied Physics Friedrich-Schiller

More information

DIFFUSION OF ACID AND ACTIVATION ENERGY OF POSITIVE CHEMICAL AMPLIFICATION RESIST

DIFFUSION OF ACID AND ACTIVATION ENERGY OF POSITIVE CHEMICAL AMPLIFICATION RESIST Journal of Photopolymer Science and Technology Volume 6, Number 4(1993) 505-514 1993TAPJ DIFFUSION OF ACID AND ACTIVATION ENERGY OF POSITIVE CHEMICAL AMPLIFICATION RESIST Koi 7ASAKAWA Toshiba Research

More information

Characterization of Optical Proximity Correction Features

Characterization of Optical Proximity Correction Features Characterization of Optical Proximity Correction Features John Allgair, Michelle Ivy, Kevin Lucas, John Sturtevant Motorola APRDL, Austin, TX 7871 Richard Elliott, Chris A. Mack, Craig MacNaughton, John

More information

Line-Edge Roughness and the Impact of Stochastic Processes on Lithography Scaling for Moore s Law

Line-Edge Roughness and the Impact of Stochastic Processes on Lithography Scaling for Moore s Law Line-Edge Roughness and the Impact of Stochastic Processes on Lithography Scaling for Moore s Law Chris A. Mack Lithoguru.com, 1605 Watchhill Rd, Austin, TX 78703 Abstract Moore s Law, the idea that every

More information

EE 434 Lecture 12. Process Flow (wrap up) Device Modeling in Semiconductor Processes

EE 434 Lecture 12. Process Flow (wrap up) Device Modeling in Semiconductor Processes EE 434 Lecture 12 Process Flow (wrap up) Device Modeling in Semiconductor Processes Quiz 6 How have process engineers configured a process to assure that the thickness of the gate oxide for the p-channel

More information

Photonics applications 5: photoresists

Photonics applications 5: photoresists IMI-NFG s Mini Course on Chalcogenide Glasses Lecture 11 Photonics applications 5: photoresists Himanshu Jain Department of Materials Science & Engineering Lehigh University, Bethlehem, PA 18015 H.Jain@Lehigh.edu

More information

Copyright 2001 by the Society of Photo-Optical Instrumentation Engineers.

Copyright 2001 by the Society of Photo-Optical Instrumentation Engineers. Copyright 2001 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Lithography for Semiconductor Manufacturing SPIE Vol. 4404, pp. 111-122. It is made

More information

Supplementary Figure 1 Detailed illustration on the fabrication process of templatestripped

Supplementary Figure 1 Detailed illustration on the fabrication process of templatestripped Supplementary Figure 1 Detailed illustration on the fabrication process of templatestripped gold substrate. (a) Spin coating of hydrogen silsesquioxane (HSQ) resist onto the silicon substrate with a thickness

More information

Copyright 1997 by the Society of Photo-Optical Instrumentation Engineers.

Copyright 1997 by the Society of Photo-Optical Instrumentation Engineers. Copyright 1997 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Advances in Resist Technology and Processing XIV, SPIE Vol. 3049, pp. 706-711. It

More information

Fabrication Technology for Miniaturization

Fabrication Technology for Miniaturization Appendix A Fabrication Technology for Miniaturization INTRODUCTION Many of the technologies that have enabled advances in miniaturization were first developed for microelectronics and allow both lateral

More information

Clean-Room microfabrication techniques. Francesco Rizzi Italian Institute of Technology

Clean-Room microfabrication techniques. Francesco Rizzi Italian Institute of Technology Clean-Room microfabrication techniques Francesco Rizzi Italian Institute of Technology Miniaturization The first transistor Miniaturization The first transistor Miniaturization The first transistor Miniaturization

More information

EUVL Readiness for High Volume Manufacturing

EUVL Readiness for High Volume Manufacturing EUVL Readiness for High Volume Manufacturing Britt Turkot Intel Corporation Outline Exposure Tool Progress Power Availability Intel demo results Reticle Defectivity Pellicle Materials Conclusion 2 Source

More information