Photolithography Overview 9/29/03 Brainerd/photoclass/ECE580/Overvie w/overview

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "Photolithography Overview 9/29/03 Brainerd/photoclass/ECE580/Overvie w/overview"

Transcription

1 1

2 Moore s law only holds due to photolithography advancements in reducing linewidths 2

3 All processing to create electric components and circuits rely on photolithography 3

4 Typical MOS transistor NMOS = n-type carrier across gate 4

5 Transistor fabrication N-MOS P-MOS 5

6 Interconnect 6

7 Chapter 1 sections 1-7 : 7

8 8

9 Basic process flow 9

10 10

11 Wafer clean: removal of Organics and metalics 11

12 HMDS Hexamethyldisilazane Prime: Replaces surface adsorbed H 2 O and gives off Ammonia. This material produces a bond with the wafer surface creating a polar surface ( electrostatic). No surface wetting by Photoresist occurs on an un-treated SiO2 surface with these bonded hydroxyl groups. Basically the Photoresist is hydrophobic and will not adhere to a hydrophilic surface. The HMDS is a hydroxyl getter and creates a hydrophobic surface, which the Photoresist had good adhesion. BOTTOMLINE: Priming adjusts the surface energy of the wafer so that it is comparable to the surface energy of the Photoresist. 12

13 Photoresist 13

14 Spin Coat 14

15 Spin Coat: RPMs: Spread or cast, Ramp,and terminal 15

16 Spin Coat 16

17 Spin Coat 17

18 Softbake Removes solvent from film and stablizing coating: typical: 90C to 120C I-line DNQ 100C to 130C: DUV CAR 18

19 Alignment 19

20 Photoresist Exposure DNQ photoresist actinic radiation 20

21 DUV: Photoresist Exposure wavelengths below 200nm All use excimer lasers Note 248nm = KrF laser 21

22 Photoresist Exposure 22

23 Exposure and feature type 23

24 Positive and Negative Tone Photoresists 24

25 Contact/Proximity/Projection printing 25

26 Projection printing: Typical stepper 26

27 Projection printing: Numerical Aperture 27

28 Projection printing: High NA lens 28

29 Projection printing: Resolution 29

30 Projection printing: Depth of Focus 30

31 Projection printing: Depth of Focus 31

32 Optical lithography Performance: Resolution NA and wavelength coherent systems 32

33 Photoresist Standing waves: reflection/interference 33

34 Photoresist Post Exposure Bake Purposes: key idea DNQ/Novolak positive tone: diffusion bake : Diffusion of PAC to improve CD contact by removing standing waves. PAG/Novolak negative tone: (acid hardened resist: AHR) Diffusion of H+ ion to react with polymer causing polymer to become insoluble.( PAG: Triazine) DUV PAG/Blocking group/phs: Diffusion of H+ ion to react with blocking group causing PHS to become soluble 34

35 Photoresist exposure and dissolution Key ideas: DNQ and Novolak Resin I-line 365nm system 1. DNQ or Photo Active Compound PAC is an Inhibitor: It inhibits Development rate when present! There is very little dissolution in an OH solution. 2. Photolytic conversion of DNQ to ICA in by exposure to Near UV radiation ( Hg lamp) increases development rate PAG and Poly Hydroxystyrene PHS DUV CAR 248nm system 1. PAG Photo-Acid-Generator creates an Acid (H+) upon exposure to 248nm radiation. There is very little dissolution in an OH solution. 2. The addition of thermal energy using a PEB bake causes the H+ to diffuse and react with the blocking group, causing the exposed area to become soluble. 35

36 Photoresist Development Threshold dose Develop exposed photoresist in TMAH (2.38%) basic solution 36

37 Photoresist CDs Dose Vs linewidth Polysilicon Linewidth DUV photoresist 0 Focus offset. 0.7 Photoresist linewidth CD um y = x R 2 = ACEN ALL ALR AUL AUR ZCEN ZLL ZLR ZUL ZUR Linear (AUL) Exposure Dose 37

38 Photoresist CDs Dose Vs Spacewidth Contact CD Vs Exposure Dose Mj/cm2 IX405 i-line Photoresist Nominal 0.80u 0.95 Contact Photoresist CD microns CEN DI Linear (201CEN DI) y = x R 2 = ASML 5500/100C Exposure dose mj/cm2 38

39 I-line Positive tone Photoresist 365nm Line dense isolated line isolated space contact 39

40 I-line negative tone Photoresist 365nm 40

41 DUV Photoresist KrF 248nm 41

42 DUV Photoresist OH contamination issue 42

43 Photoresist Post-develop bake Hardbake Improve adhesion of photoresist for subsequent wet processing: Wet etches: BHF, Acetic acid, H 2 O 2 Plateup: Au or Cu Increasing hardbake temperature will cause photoresist patterns to flow. 43

44 Photoresist Etch 44

45 Photoresist Etch: RIE 45

46 Photoresist removal: Strip Post etch 46

Effect of PAG Location on Resists for Next Generation Lithographies

Effect of PAG Location on Resists for Next Generation Lithographies Effect of PAG Location on Resists for Next Generation Lithographies ber Research Group Materials Science & Engineering Ithaca, NY 14853 Development Trends in Microlithography 10 Contact Printer Architectures

More information

Lecture 8. Photoresists and Non-optical Lithography

Lecture 8. Photoresists and Non-optical Lithography Lecture 8 Photoresists and Non-optical Lithography Reading: Chapters 8 and 9 and notes derived from a HIGHLY recommended book by Chris Mack, Fundamental Principles of Optical Lithography. Any serious student

More information

IC Fabrication Technology

IC Fabrication Technology IC Fabrication Technology * History: 1958-59: J. Kilby, Texas Instruments and R. Noyce, Fairchild * Key Idea: batch fabrication of electronic circuits n entire circuit, say 10 7 transistors and 5 levels

More information

A Physically Based Model for Predicting Volume Shrinkage in Chemically Amplified Resists

A Physically Based Model for Predicting Volume Shrinkage in Chemically Amplified Resists A Physically Based Model for Predicting Volume Shrinkage in Chemically Amplified Resists Nickhil Jakatdar 1, Junwei Bao, Costas J. Spanos Dept. of Electrical Engineering and Computer Sciences, University

More information

High Optical Density Photomasks For Large Exposure Applications

High Optical Density Photomasks For Large Exposure Applications High Optical Density Photomasks For Large Exposure Applications Dan Schurz, Warren W. Flack, Makoto Nakamura Ultratech Stepper, Inc. San Jose, CA 95134 Microlithography applications such as advanced packaging,

More information

Lecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen

Lecture 150 Basic IC Processes (10/10/01) Page ECE Analog Integrated Circuits and Systems P.E. Allen Lecture 150 Basic IC Processes (10/10/01) Page 1501 LECTURE 150 BASIC IC PROCESSES (READING: TextSec. 2.2) INTRODUCTION Objective The objective of this presentation is: 1.) Introduce the fabrication of

More information

Exploration of non-chemically amplified resists based on chain-scission mechanism for 193 nm lithography

Exploration of non-chemically amplified resists based on chain-scission mechanism for 193 nm lithography Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 2010 Exploration of non-chemically amplified resists based on chain-scission mechanism for 193 nm lithography

More information

Carrier Transport by Diffusion

Carrier Transport by Diffusion Carrier Transport by Diffusion Holes diffuse ÒdownÓ the concentration gradient and carry a positive charge --> hole diffusion current has the opposite sign to the gradient in hole concentration dp/dx p(x)

More information

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. Fall Exam 1 UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 143 Fall 2008 Exam 1 Professor Ali Javey Answer Key Name: SID: 1337 Closed book. One sheet

More information

Optical Proximity Correction

Optical Proximity Correction Optical Proximity Correction Mask Wafer *Auxiliary features added on mask 1 Overlay Errors + + alignment mask wafer + + photomask plate Alignment marks from previous masking level 2 (1) Thermal run-in/run-out

More information

Photomasks. Photolithography Evolution 9/11/2004 ECE580- MPE/MASKS/PHOTOMASKS.PPT

Photomasks. Photolithography Evolution 9/11/2004 ECE580- MPE/MASKS/PHOTOMASKS.PPT Photolithography Evolution 1 : Evolution 2 Photomasks Substrates: Type : thermal expansion Chrome Pellicles Mask: OPC and PSM Fabrication: E-Beam or Laser 3 Photomask Information Websites: http://www.photronics.com/internet/corpcomm/publications/basics101/basics.

More information

Chapter 3 Basics Semiconductor Devices and Processing

Chapter 3 Basics Semiconductor Devices and Processing Chapter 3 Basics Semiconductor Devices and Processing Hong Xiao, Ph. D. www2.austin.cc.tx.us/hongxiao/book.htm Hong Xiao, Ph. D. www2.austin.cc.tx.us/hongxiao/book.htm 1 Objectives Identify at least two

More information

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems

More information

Composition and Photochemical Mechanisms of Photoresists

Composition and Photochemical Mechanisms of Photoresists OpenStax-CNX module: m25525 1 Composition and Photochemical Mechanisms of Photoresists Andrew R. Barron This work is produced by OpenStax-CNX and licensed under the Creative Commons Attribution License

More information

Title: ASML Stepper Semiconductor & Microsystems Fabrication Laboratory Revision: B Rev Date: 12/21/2010

Title: ASML Stepper Semiconductor & Microsystems Fabrication Laboratory Revision: B Rev Date: 12/21/2010 Approved by: Process Engineer / / / / Equipment Engineer 1 SCOPE The purpose of this document is to detail the use of the ASML PAS 5500 Stepper. All users are expected to have read and understood this

More information

Next: 193nm Lithography

Next: 193nm Lithography Lecture 16 Chemical Engineering for Micro/Nano Fabrication Next: 193nm Lithography Absorption coefficient [1/µm] Absorption of Photoresist Polymers 2.8 Poly-(4-hydroxystyrene) 2.4 Meta-cresol novolak 2.0

More information

Dainippon Screen Mfg. Co., Ltd , Takamiya, Hikone, Shiga , Japan. IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium

Dainippon Screen Mfg. Co., Ltd , Takamiya, Hikone, Shiga , Japan. IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium Solid State Phenomena Vols. 145-146 (2009) pp 285-288 Online available since 2009/Jan/06 at www.scientific.net (2009) Trans Tech Publications, Switzerland doi:10.4028/www.scientific.net/ssp.145-146.285

More information

Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process

Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process Mandar Bhave, Kevin Edwards, Carlton Washburn Brewer Science, Inc., 2401 Brewer Dr., Rolla, MO 65401,

More information

Nano fabrication by e-beam lithographie

Nano fabrication by e-beam lithographie Introduction to nanooptics, Summer Term 2012, Abbe School of Photonics, FSU Jena, Prof. Thomas Pertsch Nano fabrication by e-beam lithographie Lecture 14 1 Electron Beam Lithography - EBL Introduction

More information

Photonics applications 5: photoresists

Photonics applications 5: photoresists IMI-NFG s Mini Course on Chalcogenide Glasses Lecture 11 Photonics applications 5: photoresists Himanshu Jain Department of Materials Science & Engineering Lehigh University, Bethlehem, PA 18015 H.Jain@Lehigh.edu

More information

Study of Line Edge Roughness and Interactions of Secondary Electrons in Photoresists for EUV Lithography

Study of Line Edge Roughness and Interactions of Secondary Electrons in Photoresists for EUV Lithography Study of Line Edge Roughness and Interactions of Secondary Electrons in Photoresists for EUV Lithography Suchit Bhattarai Electrical Engineering and Computer Sciences University of California at Berkeley

More information

Characterization of Optical Proximity Correction Features

Characterization of Optical Proximity Correction Features Characterization of Optical Proximity Correction Features John Allgair, Michelle Ivy, Kevin Lucas, John Sturtevant Motorola APRDL, Austin, TX 7871 Richard Elliott, Chris A. Mack, Craig MacNaughton, John

More information

Study of Iso/Dense Bias of BARCs and Gap-Fill Materials on Via Wafers Runhui Huang, Brewer Science, Inc Brewer Dr., Rolla, MO 65401, USA

Study of Iso/Dense Bias of BARCs and Gap-Fill Materials on Via Wafers Runhui Huang, Brewer Science, Inc Brewer Dr., Rolla, MO 65401, USA tudy of Iso/Dense Bias of BARCs and Gap-Fill Materials on Via Wafers Runhui Huang, Brewer cience, Inc. 241 Brewer Dr., Rolla, MO 6541, UA ABTRACT The topography of a back-end wafer contains high-aspect

More information

Section 3: Etching. Jaeger Chapter 2 Reader

Section 3: Etching. Jaeger Chapter 2 Reader Section 3: Etching Jaeger Chapter 2 Reader Etch rate Etch Process - Figures of Merit Etch rate uniformity Selectivity Anisotropy d m Bias and anisotropy etching mask h f substrate d f d m substrate d f

More information

EUVL Readiness for High Volume Manufacturing

EUVL Readiness for High Volume Manufacturing EUVL Readiness for High Volume Manufacturing Britt Turkot Intel Corporation Outline Exposure Tool Progress Power Availability Intel demo results Reticle Defectivity Pellicle Materials Conclusion 2 Source

More information

Molecular Organometallic Resists for EUV (MORE) October 6, 2013

Molecular Organometallic Resists for EUV (MORE) October 6, 2013 Molecular Organometallic Resists for EUV (MORE) October 6, 2013 Brian Cardineau, 1 James Passarelli, 1 Miriam Sortland, 1 Ryan Del Re, 1 Westly Tear, 1 Hashim Al-Mashat, 2 Miles Marnell, 2 Kara Heard,

More information

Structuring and bonding of glass-wafers. Dr. Anke Sanz-Velasco

Structuring and bonding of glass-wafers. Dr. Anke Sanz-Velasco Structuring and bonding of glass-wafers Dr. Anke Sanz-Velasco Outline IMT Why glass? Components for life science Good bond requirements and evaluation Wafer bonding 1. Fusion bonding 2. UV-adhesive bonding

More information

X-Rays From Laser Plasmas

X-Rays From Laser Plasmas X-Rays From Laser Plasmas Generation and Applications I. C. E. TURCU CLRC Rutherford Appleton Laboratory, UK and J. B. DANCE JOHN WILEY & SONS Chichester New York Weinheim Brisbane Singapore Toronto Contents

More information

Particle Generation during Photoresist Dissolution

Particle Generation during Photoresist Dissolution Particle Generation during Photoresist Dissolution Siddharth Chauhan a, Mark Somervell b, Michael Carcasi b, Steven Scheer b, Roger T. Bonnecaze a, Chris Mack c and C. Grant Willson a a Department of Chemical

More information

Etching: Basic Terminology

Etching: Basic Terminology Lecture 7 Etching Etching: Basic Terminology Introduction : Etching of thin films and sometimes the silicon substrate are very common process steps. Usually selectivity, and directionality are the first

More information

FLCC Seminar. Spacer Lithography for Reduced Variability in MOSFET Performance

FLCC Seminar. Spacer Lithography for Reduced Variability in MOSFET Performance 1 Seminar Spacer Lithography for Reduced Variability in MOSFET Performance Prof. Tsu-Jae King Liu Electrical Engineering & Computer Sciences Dept. University of California at Berkeley Graduate Student:

More information

BONDING PARAMETERS OPTIMIZATION IN LOW TEMPERATURE ADHESIVE WAFER BONDING PROCESS USING SU-8 AS AN INTERMEDIATE ADHESIVE LAYER

BONDING PARAMETERS OPTIMIZATION IN LOW TEMPERATURE ADHESIVE WAFER BONDING PROCESS USING SU-8 AS AN INTERMEDIATE ADHESIVE LAYER BONDING PARAMETERS OPTIMIZATION IN LOW TEMPERATURE ADHESIVE WAFER BONDING PROCESS USING SU-8 AS AN INTERMEDIATE ADHESIVE LAYER Srinivasulu Korrapati B.E., Anna University, India, 2005 PROJECT Submitted

More information

Gold Nanoparticles Floating Gate MISFET for Non-Volatile Memory Applications

Gold Nanoparticles Floating Gate MISFET for Non-Volatile Memory Applications Gold Nanoparticles Floating Gate MISFET for Non-Volatile Memory Applications D. Tsoukalas, S. Kolliopoulou, P. Dimitrakis, P. Normand Institute of Microelectronics, NCSR Demokritos, Athens, Greece S. Paul,

More information

Spring Lecture 4 Contamination Control and Substrate Cleaning. Nanometer Scale Patterning and Processing

Spring Lecture 4 Contamination Control and Substrate Cleaning. Nanometer Scale Patterning and Processing Nanometer Scale Patterning and Processing Spring 2016 Lecture 4 Contamination Control and Substrate Cleaning Contaminants A substance causes uncontrolled variations in the (electrical) performance of the

More information

Simulation and characterization of surface and line edge roughness in photoresists before and after etching

Simulation and characterization of surface and line edge roughness in photoresists before and after etching Simulation and characterization of surface and line edge roughness in photoresists before and after etching Motivation of this work : Sub 100nm lithographic features often suffer from roughness. Need to

More information

Trends in Surface Treatment for Multi-Layer Packaging

Trends in Surface Treatment for Multi-Layer Packaging Trends in Surface Treatment for Multi-Layer Packaging Presented by Senthil Kumar C.O.O. Enercon Asia Pacific Major Presentation Topics Trends and Challenges Multi-Film Structures Wet vs. Dry Trapping on

More information

Important challenge for the extension of Spacer DP process

Important challenge for the extension of Spacer DP process Important challenge for the extension of Spacer DP process H. Yaegashi Tokyo Electron Limited Leading-edge Process development center Kobe, JAPAN 21 October 2010 1 Outline Background Lithographic scaling

More information

Innovative. Technologies. Chemie des Klebens Chemistry of Adhesives. Dr. Jochen Stock, Laboratory Manager CRL Germany: Neuss, November 27 th, 2013

Innovative. Technologies. Chemie des Klebens Chemistry of Adhesives. Dr. Jochen Stock, Laboratory Manager CRL Germany: Neuss, November 27 th, 2013 Chemie des Klebens Chemistry of Adhesives Dr. Jochen Stock, Laboratory Manager CRL Germany: Neuss, November 27 th, 2013 Innovative Technologies 1 Overview Chemie des Klebens Chemistry of Adhesives Introduction

More information

Design, Analysis and Fabrication of a Microflexural AND Gate

Design, Analysis and Fabrication of a Microflexural AND Gate Design, Analysis and Fabrication of a Microflexural AND Gate Abhishek Modi 1, Himani Shah 1*, C. Amarnath 1, P. S. Gandhi 1, S. G. Singh 2, and Ritu Rashmi 2 1 Department of Mechanical Engineering, Indian

More information

DESIGN, FABRICATION, AND CHARACTERIZATION OF ELECTROSTATICALLY- ACTUATED SILICON MICRO-MIRRORS

DESIGN, FABRICATION, AND CHARACTERIZATION OF ELECTROSTATICALLY- ACTUATED SILICON MICRO-MIRRORS DESIGN, FABRICATION, AND CHARACTERIZATION OF ELECTROSTATICALLY- ACTUATED SILICON MICRO-MIRRORS A Thesis presented to the Faculty of California Polytechnic State University, San Luis Obispo In Partial Fulfillment

More information

Orthogonal Processing: A New Strategy for Patterning Organic Electronics

Orthogonal Processing: A New Strategy for Patterning Organic Electronics 1 rthogonal Processing: A New Strategy for Patterning rganic Electronics ERC Teleconference 3/September/2009 Jin-Kyun Lee and Christopher K. ber* Materials Science & Engineering Cornell University 2 rganic

More information

Modeling Solvent Effects in. Optical Lithography

Modeling Solvent Effects in. Optical Lithography Modeling Solvent Effects in Optical Lithography by Chris A. Mack Copyright 1998 by Chris Alan Mack Modeling Solvent Effects in Optical Lithography by Chris Alan Mack, B.S., M.S. Dissertation Presented

More information

EE382M-14 CMOS Analog Integrated Circuit Design

EE382M-14 CMOS Analog Integrated Circuit Design EE382M-14 CMOS Analog Integrated Circuit Design Lecture 3, MOS Capacitances, Passive Components, and Layout of Analog Integrated Circuits MOS Capacitances Type of MOS transistor capacitors Depletion capacitance

More information

Fundamental aspects of Photosensitized chemically amplified resist (PSCAR) and CAR: How to overcome RLS trade-off and photon shot noise problems

Fundamental aspects of Photosensitized chemically amplified resist (PSCAR) and CAR: How to overcome RLS trade-off and photon shot noise problems Fundamental aspects of Photosensitized chemically amplified resist (PSCAR) and CAR: How to overcome RLS trade-off and photon shot noise problems Seiichi Tagawa The Institute of Scientific and Industrial

More information

Reactive Ion Etching (RIE)

Reactive Ion Etching (RIE) Reactive Ion Etching (RIE) RF 13.56 ~ MHz plasma Parallel-Plate Reactor wafers Sputtering Plasma generates (1) Ions (2) Activated neutrals Enhance chemical reaction 1 2 Remote Plasma Reactors Plasma Sources

More information

Fiducial Marks for EUV mask blanks. Jan-Peter Urbach, James Folta, Cindy Larson, P.A. Kearney, and Thomas White

Fiducial Marks for EUV mask blanks. Jan-Peter Urbach, James Folta, Cindy Larson, P.A. Kearney, and Thomas White Fiducial Marks for EUV mask blanks Jan-Peter Urbach, James Folta, Cindy Larson, P.A. Kearney, and Thomas White Fiducial marks are laser scribed on 200 mm wafers to enable defect registration on metrology

More information

ZEP520 ZEP520. Technical Report. ZEON CORPORATION Specialty Materials Division. High Resolution Positive Electron Beam Resist.

ZEP520 ZEP520. Technical Report. ZEON CORPORATION Specialty Materials Division. High Resolution Positive Electron Beam Resist. Technical Report ZEP52 ZEP52 Ver.1.2 Mar.21 ZEONREX Electronic Chemicals High Resolution Positive Electron Beam Resist ZEP52 ZEON CORPORATION Specialty Materials Division Headquarters R&D Center Furukawa

More information

Nanoimprint Lithography

Nanoimprint Lithography Nanoimprint Lithography Wei Wu Quantum Science Research Advanced Studies HP Labs, Hewlett-Packard Email: wei.wu@hp.com Outline Background Nanoimprint lithography Thermal based UV-based Applications based

More information

Industrial Applications of Ultrafast Lasers: From Photomask Repair to Device Physics

Industrial Applications of Ultrafast Lasers: From Photomask Repair to Device Physics Industrial Applications of Ultrafast Lasers: From Photomask Repair to Device Physics Richard Haight IBM TJ Watson Research Center PO Box 218 Yorktown Hts., NY 10598 Collaborators Al Wagner Pete Longo Daeyoung

More information

Monte Carlo simulation and experimental study of stopping power of lithography resist and its application in development of a CMOS/EE process

Monte Carlo simulation and experimental study of stopping power of lithography resist and its application in development of a CMOS/EE process Monte Carlo simulation and experimental study of stopping power of lithography resist and its application in development of a CMOS/EE process Predrag Habaš, Roman Stapor, Alexandre Acovic and Maurice Lobet

More information

Chromeless Phase Lithography (CPL)

Chromeless Phase Lithography (CPL) Chromeless Phase Lithography (CPL) Chromeless Phase Lithography or CPL is a recent development in the area of phase shifting technology that is extending the perceived k 1 limits and has the potential

More information

An Optimal Substrate Design for SERS: Dual-Scale Diamond-Shaped Gold Nano-Structures Fabricated via Interference Lithography

An Optimal Substrate Design for SERS: Dual-Scale Diamond-Shaped Gold Nano-Structures Fabricated via Interference Lithography Supporting Information An Optimal Substrate Design for SERS: Dual-Scale Diamond-Shaped Gold Nano-Structures Fabricated via Interference Lithography Hyo-Jin Ahn a, Pradheep Thiyagarajan a, Lin Jia b, Sun-I

More information

Sensitization mechanisms of chemically amplified EUV resists and resist design for 22 nm node. Takahiro Kozawa and Seiichi Tagawa

Sensitization mechanisms of chemically amplified EUV resists and resist design for 22 nm node. Takahiro Kozawa and Seiichi Tagawa Sensitization mechanisms of chemically amplified EUV resists and resist design for 22 nm node Takahiro Kozawa and Seiichi Tagawa The Institute of Scientific and Industrial Research, Osaka University, 8-1

More information

Three Approaches for Nanopatterning

Three Approaches for Nanopatterning Three Approaches for Nanopatterning Lithography allows the design of arbitrary pattern geometry but maybe high cost and low throughput Self-Assembly offers high throughput and low cost but limited selections

More information

EUV Resist-Fundamental Research

EUV Resist-Fundamental Research EUV Resist-Fundamental Research Akinori Saeki, Hiroki Yamamoto, Takahiro Kozawa, and Seiichi Tagawa The Institute of Scientific and Industrial Research, Osaka University CREST, Japan Science and Technology

More information

Demagnifying X-Ray Lithography

Demagnifying X-Ray Lithography Demagnifying X-Ray Lithography Von der Fakultät für Mathematik, Informatik und Naturwissenschaften der Rheinisch-Westfälischen Technischen Hochschule Aachen zur Erlangung des akademischen Grades einer

More information

Bossung Curves; an old technique with a new twist for sub-90 nm nodes Terrence E. Zavecz TEA Systems

Bossung Curves; an old technique with a new twist for sub-90 nm nodes Terrence E. Zavecz TEA Systems Phone: (+01) 610 682 4146 Email: Info@TEAsystems.com http://www.teasystems.com TEA Systems Corporation 65 Schlossburg St. Alburtis, PA 18011 USA Bossung Curves; an old technique with a new twist for sub-90

More information

World-wide Standardization Effort on Leaching Measurement Methodology

World-wide Standardization Effort on Leaching Measurement Methodology World-wide Standardization Effort on Leaching Measurement Methodology Roel Gronheid 1, Christina Baerts 1, Stefan Caporale 2, Jim Alexander 2, Ben Rathsack 3, Steven Scheer 3, Katsumi Ohmori 4, Bryan Rice

More information

Update in Material and Process Technologies for 2.5/3D IC Dr. Rainer Knippelmeyer CTO and VP R&D, SÜSS MicroTec AG

Update in Material and Process Technologies for 2.5/3D IC Dr. Rainer Knippelmeyer CTO and VP R&D, SÜSS MicroTec AG Update in Material and Process Technologies for 2.5/3D IC Dr. Rainer Knippelmeyer CTO and VP R&D, SÜSS MicroTec AG TEMPORARY BONDING / DEBONDING AS THIN WAFER HANDLING SOLUTION FOR 3DIC & INTERPOSERS Device

More information

Film Deposition Part 1

Film Deposition Part 1 1 Film Deposition Part 1 Chapter 11 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Spring Semester 2013 Saroj Kumar Patra Semidonductor Manufacturing Technology, Norwegian University of

More information

Supporting Online Material for

Supporting Online Material for www.sciencemag.org/cgi/content/full/327/5966/662/dc Supporting Online Material for 00-GHz Transistors from Wafer-Scale Epitaxial Graphene Y.-M. Lin,* C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y.

More information

Hiroshi Ito and Mark Sherwood. IBMAlmaden Research Center 650 Harry Road San Jose, CA 95120, U S. A ibm. com.

Hiroshi Ito and Mark Sherwood. IBMAlmaden Research Center 650 Harry Road San Jose, CA 95120, U S. A ibm. com. Journal of Photopolymer Science and Technology Volumel2,Number4(1999) 625-636 1999TAPJ Investigation of Deep UV Solvents, Chemistries, Resists by NMR: Residual and PAG Decomposition in Casting Film Hiroshi

More information

Chapter 8 Ion Implantation

Chapter 8 Ion Implantation Chapter 8 Ion Implantation 2006/5/23 1 Wafer Process Flow Materials IC Fab Metalization CMP Dielectric deposition Test Wafers Masks Thermal Processes Implant PR strip Etch PR strip Packaging Photolithography

More information

Radical Initiation 2017/2/ ) Thermal Decomposition of Initiators

Radical Initiation 2017/2/ ) Thermal Decomposition of Initiators adical Initiation Production of radicals (from initiator) to initiate chain polymerization. A variety of initiator systems can be used to bring about the radical polymerization. 1) Thermal Decomposition

More information

CURRENT STATUS OF NANOIMPRINT LITHOGRAPHY DEVELOPMENT IN CNMM

CURRENT STATUS OF NANOIMPRINT LITHOGRAPHY DEVELOPMENT IN CNMM U.S. -KOREA Forums on Nanotechnology 1 CURRENT STATUS OF NANOIMPRINT LITHOGRAPHY DEVELOPMENT IN CNMM February 17 th 2005 Eung-Sug Lee,Jun-Ho Jeong Korea Institute of Machinery & Materials U.S. -KOREA Forums

More information

Scaling up Chemical Vapor Deposition Graphene to 300 mm Si substrates

Scaling up Chemical Vapor Deposition Graphene to 300 mm Si substrates Scaling up Chemical Vapor Deposition Graphene to 300 mm Si substrates Co- Authors Aixtron Alex Jouvray Simon Buttress Gavin Dodge Ken Teo The work shown here has received partial funding from the European

More information

A Temporary Bonding and Debonding Technology for TSV Fabrication

A Temporary Bonding and Debonding Technology for TSV Fabrication A Temporary Bonding and Debonding Technology for TSV Fabrication Taku Kawauchi, Masatoshi Shiraishi, Satoshi Okawa, Masahiro Yamamoto Tokyo Electron Ltd, Japan Taku Kawauchi, Tokyo Electron Ltd./Slide

More information

Adhesion Improvement on Smooth Cu Wiring Surfaces of Printed Circuit Boards

Adhesion Improvement on Smooth Cu Wiring Surfaces of Printed Circuit Boards [Technical Paper] Adhesion Improvement on Smooth Cu Wiring Surfaces of Printed Circuit Boards Motoaki Tani*, Shinya Sasaki*, and Keisuke Uenishi** *Next-Generation Manufacturing Technologies Research Center,

More information

Visual Test Light Scattering Reticle. Users Guide

Visual Test Light Scattering Reticle. Users Guide Visual Test Light Scattering Reticle Users Guide Floppy Disk Contents Filename 4INVTW: 5INVTW: 6INVTW: 4", 5", and 6" reticle data for producing a Visual Test Wafer. This wafer contains both horizontal

More information

Lithography. The Crystal Growth and Reticle Degradation Exposé. Reticle Surface Contaminants and Their Relationship to Sub-pellicle Particle Formation

Lithography. The Crystal Growth and Reticle Degradation Exposé. Reticle Surface Contaminants and Their Relationship to Sub-pellicle Particle Formation Lithography R E T I C L E The Crystal Growth and Reticle Degradation Exposé Reticle Surface Contaminants and Their Relationship to Sub-pellicle Particle Formation Brian J. Grenon, Grenon Consulting, Incorporated

More information

Copyright 1997 by the Society of Photo-Optical Instrumentation Engineers.

Copyright 1997 by the Society of Photo-Optical Instrumentation Engineers. Copyright 1997 by the Society of Photo-Optical Instrumentation Engineers. This paper was published in the proceedings of Advances in Resist Technology and Processing XIV, SPIE Vol. 309, pp. 850-860. It

More information

EUV Lithography Status and Key Challenges for HVM Implementation

EUV Lithography Status and Key Challenges for HVM Implementation EUV Lithography Status and Key Challenges for HVM Implementation Sam Intel Corporation Moore s Law at Intel 10 Feature Size (um) 100 Cell Area (sq um) 1 10 0.5x every 2 years 0.1 1 0.01 1970 1980 1990

More information

UV2Litho Usable Vacuum Ultra Violet Lithography

UV2Litho Usable Vacuum Ultra Violet Lithography UV2Litho Usable Vacuum Ultra Violet Lithography A.M. Goethals, R. Jonckheere, F. Van Roey, Jan Hermans, A. Eliat, K. Ronse (IMEC) P. Wong (ASML) P. Zandbergen (Philips) M. Vasconi, E. Severgnini (STMicroelectronics

More information

Microsystems Technology Laboratories i-stepperthursday, October 27, 2005 / site map / contact

Microsystems Technology Laboratories i-stepperthursday, October 27, 2005 / site map / contact Microsystems Technology Laboratories i-stepperthursday, October 27, 2005 / site map / contact Fabrication BecomING an MTL Fab. User Internal MIT Users External Users Facilities Fab. staff MTL Orientation

More information

ADHESION MECHANISMS FOR AUTOMOTIVE PLASTIC PARTS

ADHESION MECHANISMS FOR AUTOMOTIVE PLASTIC PARTS ADHESION MECHANISMS FOR AUTOMOTIVE PLASTIC PARTS Dr. Marcos Fernandes de Oliveira 1 1 DuPont do Brasil S.A. - São Paulo Brazil Contacting the author: marcos-fernandes.oliveira@bra.dupont.com marcosfernandes1@yahoo.com.br

More information

Surface Mount UV LED. NUVA33 Series PART NUMBERING SYSTEM. WAVELENGTH CODES Code Nominal Wavelength

Surface Mount UV LED. NUVA33 Series PART NUMBERING SYSTEM. WAVELENGTH CODES Code Nominal Wavelength FEATURES SURFACE MOUNT 3.4mm x 3.4mm x 2.37mm WAVELENGTH 365 ~ 45nm FOR UV CURING, PHOTO CATALYST & SENSOR LIGHTING RoHS COMPLIANT COMPATIBLE WITH REFLOW SOLDERING TAPE AND REEL PACKAGING SPECIFICATIONS

More information

Passionately Innovating With Customers To Create A Connected World

Passionately Innovating With Customers To Create A Connected World Passionately Innovating With Customers To Create A Connected World Multi Die Integration Can Material Suppliers Meet the Challenge? Nov 14, 2012 Jeff Calvert - R&D Director, Advanced Packaging Technologies

More information

A 20 nm gate-length ultra-thin body p-mosfet with silicide source/drain

A 20 nm gate-length ultra-thin body p-mosfet with silicide source/drain Superlattices and Microstructures, Vol. 28, No. 5/6, 2000 doi:10.1006/spmi.2000.0947 Available online at http://www.idealibrary.com on A 20 nm gate-length ultra-thin body p-mosfet with silicide source/drain

More information

Introduction to Electron Beam Lithography

Introduction to Electron Beam Lithography Introduction to Electron Beam Lithography Boštjan Berčič (bostjan.bercic@ijs.si), Jožef Štefan Institute, Jamova 39, 1000 Ljubljana, Slovenia 1. Introduction Electron Beam Lithography is a specialized

More information

Etching Issues - Anisotropy. Dry Etching. Dry Etching Overview. Etching Issues - Selectivity

Etching Issues - Anisotropy. Dry Etching. Dry Etching Overview. Etching Issues - Selectivity Etching Issues - Anisotropy Dry Etching Dr. Bruce K. Gale Fundamentals of Micromachining BIOEN 6421 EL EN 5221 and 6221 ME EN 5960 and 6960 Isotropic etchants etch at the same rate in every direction mask

More information

A Reticle Correction Technique to Minimize Lens Distortion Effects

A Reticle Correction Technique to Minimize Lens Distortion Effects A Reticle Correction Technique to Minimize Lens Distortion Effects Warren W. Flack, Gary E. Flores, Alan Walther and Manny Ferreira Ultratech Stepper, Inc. San Jose, CA 95134 Mix-and-match lithography

More information

Midterm I - Solutions

Midterm I - Solutions UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Spring 2008 Professor Chenming Hu Midterm I - Solutions Name: SID: Grad/Undergrad: Closed

More information

The deprotection reaction front profile in model 193 nm methacrylate-based chemically amplified photoresists

The deprotection reaction front profile in model 193 nm methacrylate-based chemically amplified photoresists The deprotection reaction front profile in model 193 nm methacrylate-based chemically amplified photoresists Bryan D. Vogt a, Shuhui Kang a, Vivek M. Prabhu *a, Ashwin Rao a, Eric K. Lin a, Sushil K. Satija

More information

DUV ( nm ) Characterization of Materials: A new instrument, the Purged UV Spectroscopic Ellipsometer,

DUV ( nm ) Characterization of Materials: A new instrument, the Purged UV Spectroscopic Ellipsometer, WISE 2000, International Workshop on Spectroscopic Ellipsometry, 8 9 May 2000 DUV (150 350nm ) Characterization of Materials: A new instrument, the Purged UV Spectroscopic Ellipsometer, Pierre BOHER,,

More information

Understanding Molecular Level Effects during Post Exposure Processing

Understanding Molecular Level Effects during Post Exposure Processing Understanding Molecular Level Effects during Post Exposure Processing Gerard M. Schmid *a, Mark D. Smith b, Chris A. Mack b, Vivek K. Singh c, Sean D. Burns a, and C. Grant Willson a a The University of

More information

More on Stochastics and the Phenomenon of Line-Edge Roughness

More on Stochastics and the Phenomenon of Line-Edge Roughness More on Stochastics and the Phenomenon of Line-Edge Roughness Chris A. Mack 34 th International Photopolymer Science and Technology Conference Chiba, Japan, June 28, Conclusions We need more than just

More information

Characterization of electric charge carrier transport in organic semiconductors by time-of-flight technique

Characterization of electric charge carrier transport in organic semiconductors by time-of-flight technique Characterization of electric charge carrier transport in organic semiconductors by time-of-flight technique Raveendra Babu Penumala Mentor: Prof. dr. Gvido Bratina Laboratory of Organic Matter Physics

More information

HPLC Background Chem 250 F 2008 Page 1 of 24

HPLC Background Chem 250 F 2008 Page 1 of 24 HPLC Background Chem 250 F 2008 Page 1 of 24 Outline: General and descriptive aspects of chromatographic retention and separation: phenomenological k, efficiency, selectivity. Quantitative description

More information

EE410 vs. Advanced CMOS Structures

EE410 vs. Advanced CMOS Structures EE410 vs. Advanced CMOS Structures Prof. Krishna S Department of Electrical Engineering S 1 EE410 CMOS Structure P + poly-si N + poly-si Al/Si alloy LPCVD PSG P + P + N + N + PMOS N-substrate NMOS P-well

More information

There's Plenty of Room at the Bottom

There's Plenty of Room at the Bottom There's Plenty of Room at the Bottom 12/29/1959 Feynman asked why not put the entire Encyclopedia Britannica (24 volumes) on a pin head (requires atomic scale recording). He proposed to use electron microscope

More information

Relationships between Stochastic Phenomena and Optical Contrast in Chemically Amplified Resist Process of Extreme Ultraviolet Lithography

Relationships between Stochastic Phenomena and Optical Contrast in Chemically Amplified Resist Process of Extreme Ultraviolet Lithography Journal of Photopolymer Science and Technology Volume 7, Number () 9 SPST Relationships between Stochastic Phenomena and Optical Contrast in Chemically Amplified Resist Process of Extreme Ultraviolet Lithography

More information

VLSI Design I; A. Milenkovic 1

VLSI Design I; A. Milenkovic 1 Course Administration CPE/EE 47, CPE 57 SI Design I 0: IC Manufacturing & MOS Transistor Theory Department of Electrical and Computer Engineering University of Alabama in Huntsville Aleksandar Milenkovic

More information

Molecular Glass Resist with Organic Developer

Molecular Glass Resist with Organic Developer 1 Molecular Glass Resist with Organic Developer James M. Blackwell 1,2 Armando Ramirez 1 Hiroki Nakagawa 1,3 Yoshi Hishiro 3 1 Intel's Molecules for Advanced Patterning(MAP) Program, LBNL Molecular Foundry,

More information

Photoresists for Screen Printing Plates with High Resolution and Sensitivity Using Thiol-ene Reaction

Photoresists for Screen Printing Plates with High Resolution and Sensitivity Using Thiol-ene Reaction Journal of Photopolymer cience and Technology Volume 28, Number 1 (2015) 61 66 2015PT Photoresists for creen Printing Plates with High Resolution and ensitivity Using Thiol-ene Reaction Haruyuki kamura,

More information

EUREKA: A new Industry EUV Research Center at LBNL

EUREKA: A new Industry EUV Research Center at LBNL EUREKA: A new Industry EUV Research Center at LBNL Patrick Naulleau Center for X-ray Optics Lawrence Berkeley National Laboratory Berkeley Lab MSD Materials Sciences Division 1 Operating model Core operational

More information

FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST ATMOSPHERIC PRESSURE PLASMA PROCESSES

FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST ATMOSPHERIC PRESSURE PLASMA PROCESSES FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST ATMOSPHERIC PRESSURE PLASMA PROCESSES 1 2 ATMOSPHERIC PRESSURE PLASMA PROCESSES AT THE FRAUNHOFER IST Today, atmospheric pressure plasma

More information

Wet and Dry Etching. Theory

Wet and Dry Etching. Theory Wet and Dry Etching Theory 1. Introduction Etching techniques are commonly used in the fabrication processes of semiconductor devices to remove selected layers for the purposes of pattern transfer, wafer

More information

Why we dare to go without DARE (library) Innovation for life

Why we dare to go without DARE (library) Innovation for life Why we dare to go without DARE (library) Innovation for life TNO is active in five core areas Quality of Life Defence, Security & Safety Science & Industry Built Environment & Geosciences Information &

More information

Copyright. Anh Quoc Nguyen

Copyright. Anh Quoc Nguyen Copyright by Anh Quoc Nguyen 001 Asymmetric Fluid-Structure Dynamics in Nanoscale Imprint Lithography by Anh Quoc Nguyen, B.S. Thesis Presented to the Faculty of the Graduate School of The University of

More information

What do we study and do?

What do we study and do? What do we study and do? Light comes from electrons transitioning from higher energy to lower energy levels. Wave-particle nature of light Wave nature: refraction, diffraction, interference (labs) Particle

More information