Mie resonators on silicon Fabrication and optical properties

Transcription

1 Mie resonators on silicon Fabrication and optical properties Marco Abbarchi 1, Meher Naffouti 1,4, Thomas David 1, Benjamin Vial 2, Abdelmalek Benkouider 1, Laurent Lermusiaux 3,Luc Favre 1, Antoine Ronda 1, Se bastien Bidault 3, Isabelle Berbezier 1, Nicolas Bonod 2 (1) CNRS, Aix-Marseille Universite, IM2NP, UMR 7334, Campus de St. Jerome, Marseille, France, (2) CNRS, Aix-Marseille Universite, Centrale Marseille, Institut Fresnel, UMR 7249, Campus de St. Jerome, Marseille, France, (3) Institut Langevin, ESPCI ParisTech, CNRS UMR 7587, Paris, France, (4) Laboratoire de Micro-opto electronique et Nanostructures, Faculte des Sciences de Monastir, 5019 Monastir, Tunisia

2 STANDARD METHODS FOR LIGHT MANIPULATION AT THE NANOSCALE: SEMICONDUCTOR MICROCAVITIES: FABRY-PEROT RESONATORS θ METALLIC NANOPARTICLES: PLASMONIC RESONATORS Top DBR Bottom DBR Cavity Bragg mirror GaAs/AlAs HAMAMATSU Cavity Bragg mirror GaAs/AlAs TEM, G. Patriarche, LPN

3 STANDARD METHODS FOR LIGHT MANIPULATION AT THE NANOSCALE: PURCELL EFFECT: enhancement of spontaneous emission rate of two-level system F P Q V QUALITY FACTOR ( photon life ) MODE VOLUME SEMICONDUCTOR MICROCAVITIES: FABRY-PEROT RESONATORS METALLIC NANOPARTICLES: PLASMONIC RESONATORS Q= V~,>l 3.small ohmic losses and very large Q but relatively large modal volume V. Vahala NATURE 2003 V<<l 3 Q~100.but very small particles suffer from significant ohmic losses, which scale with volume V. Fan, SCIENCE 2010

4 A NOVEL SOLUTION FOR LIGHT MANIPULATION AT THE NANOSCALE: DIELECTRIC MIE RESONATORS Garcıa-Etxarri OPT. EXP 2011 Kuznetsov, SCI. REP 2012 DIELECTRIC PARTICLE l n D 2R [ ] the polarization of the electric field is antiparallel at opposite boundaries of the sphere, which gives rise to strong coupling to circulation displacement currents while magnetic field oscillates up and down in the middle.

5 FABRICATION METHODS FOR DIELECTRIC MIE RESONATORS LASER ABLATION E-BEAM & RIE of SOI COLLOIDS Staude, ACS nano 2013 Person, NANO Letters 2013 Coenen, ACS nano, 2013 NANOIMPRINT Shi, ADV. MAT Shi, NAT. COMM 2013 Garin, NAT. COMM CHEMICAL ALKALINE ETCHING Evlyukhin, NANO letter 2012 Kuznetsov, SCI. REP 2012 Yan, NAT. COMM 2015 Permyakov, APL 2015 Spinelli, NAT. COMM Proust, ADV. OPTICAL MATER. 2015

6 FABRICATION OF Si AND SiGe-BASED MIE RESONATORS VIA S.O.I. DEWETTING SEM -SPONTANEOUS S.O.I. DEWETTING Ultra large surfaces -ASSISTED S.O.I. DEWETTING Organization of arrays and complex oligomers

7 INSTABILITY OF THIN FILMS ULTRA-THIN LAYERS (liquids, metals, polymers, etc.) ARE NOT STABLE UNDER PERTURBATION ENERGY -THIN SILICON ON INSULTOR (S.O.I.) ~10 nm ANNEALED AT HIGH TEMPERATURES (~ C) DEWETS AND FORMS 3D ISLANDS (Rayleigh-like instability) METASTABLE STATE Danielson JOURN. APPL. PHYS 2006 Pierre-Louis PHYS. REV LETT 2007, 2009 Jiang, ACTA MAT Aouassa New Journal of Physics 2012 Wang, PHYS. REV B D NEW EQUILIBRIUM STATE 3D TIME

8 INSTABILITY OF THIN FILMS: THE CASE OF THIN S.O.I. -ULTRA-THIN SOI (~ 10 nm) -ANNEALED AT HIGH TEMPETARURES ( C) -IN ULTRA-HIGH VACUUM (< 10-9 Torr) BUSSMAN New Journal of Physics 2011 ABBARCHI ACS nano 2014

9 DARK FIELD OPTICAL MICROSCOPY OF DEWETTED SURFACES

10 DARK FIELD SPECTROSCOPY DARK FIELD MICROSCOPY OF INDIVIDUAL Si ISLANDS ATOMIC FORCE MICROSCOPY EXPERIMENT FEM SIMULATION ABBARCHI ACS nano 2014

11 ABBARCHI ACS nano 2014 SPONTANEOUS DEWETTING vs ASSISTED DEWETTING ANNEALING INDEPENDENT FROM SAMPLE SIZE!! TIME, TEMPERATURE E-BEAM AND RIE+ ANNEALING CONTROL OF SIZE AND SPACING

12 ASSISTED DEWETTING: FOCUSED ION BEAM 500 nm 750 nm 1000 nm ISLANDS SIZE

13 ASSISTED DEWETTING: FOCUSED ION BEAM LOW TEMPERATURE ANNEALING (SLOW DEWETTING REGIME): INDIVIDUAL MIE RESONATORS

14 FOCUSED ION BEAM + LOW TEMPERATURE DEWETTING: INDIVIDUAL RESONATOR ABBARCHI ACS nano 2014 ISHIKAWA, Appl. Surf. Sci.2002 MD ED MQ??

15 ASSISTED DEWETTING: FOCUSED ION BEAM HIGH TEMPERATURE ANNEALING (FAST DEWETTING REGIME): MIE RESONATOR OLIGOMERS

16 FOCUSED ION BEAM+HIGH TEMPERATURE DEWETTING: MIE RESONATORS OLIGOMERS ABBARCHI ACS nano 2014

17 FOCUSED ION BEAM+DEWETTING + Ge DEPOSITION: MIE RESONATORS OLIGOMERS Ge deposition induces the collapse of the islands number IB PATTERN

18 FOCUSED ION BEAM+DEWETTING + Ge DEPOSITION:MIE RESONATORS OLIGOMERS

19 MIE RESONATORS OLIGOMERS: size and position distributions Silicon Silicon-germanium Silicon-germanium 3 mm

20 CONCLUSION: DEWETTING IS A RELEVANT FABRICATION METHOD FOR DIELECTRIC RESONATORS -PERFECTLY CRYSTALLINE ISLANDS WITH ATOMIC SMOOTH SURFACES -ONE STEP FABRICATION PROCESS, INDEPENDENT FROM THE SAMPLE SIZE!! -ALLOWS FOR A PRECISE CONTROL OF THE RESONATOR NUMBER -ELECTRIC CONTROL IS POSSIBLE

21 Meher Naffouti Thomas David THANK YOU!