Resolving Questions of Biological Interface Chemistry with TOF-SIMS and FIB-TOF Tomography

Size: px
Start display at page:

Download "Resolving Questions of Biological Interface Chemistry with TOF-SIMS and FIB-TOF Tomography"

Transcription

1 Resolving Questions of Biological Interface Chemistry with TOF-SIMS and FIB-TOF Tomography Gregory L. Fisher, John S. Hammond & Scott R. Bryan, Physical Electronics With acknowledgements to: Prof. Reinhard Jetter, Dr. Phil Wong, Christopher Buschhaus at UBC Prof. Hans Lust, Dr. Priit Möller, Rait Kanarbik at Univ. of Tartu

2

3 Why the Interest in Epicuticular Waxes? The cuticle is of ecological importance because it forms the interface between plant organs and the environment. The function(s) of plant cuticles can best be understood on the basis of the characteristic cuticular wax composition and the biosynthetic origin of the cuticular wax components.

4 Verification of Cuticular Wax Components e.g. Chemical Imaging of the Stem The vascular and cuticular regions are observed along with the substrate. Data removed due to pending publication.

5 Specialized Arabidopsis Cells spores stomates trichome SEM Images dev.biologists.org botanicalgarden.ubc.ca planttrichome.org TOF-SIMS Images Data removed due to pending publication.

6 Arabidopsis th. Abaxial Leaf & Stomates Data removed due to pending publication.

7 Chemical Characterization of Stomates Data removed due to pending publication.

8 Chemical Characterization of Trichomes Data removed due to pending publication.

9 Summary Specialized cells within a single organ appear to have distinct epicuticular wax compositions. Chemical imaging of intact organs provides verification that specific spectral features are, in fact, components of epicuticular wax. The observation and identification of specific wax components on specialized cuticular cells by TOF-SIMS is relatively straight forward. Such an analysis is difficult or impossible with more traditional extraction & chromatography or microscopy methods. These observations and chemical characterization are easily achieved owing to the unique attributes of the TRIFT analyzer. These results have been confirmed by duplicate analyses.

10 3D Imaging by FIB-TOF Tomography tomography sample preparation FIB sectioning TOF-SIMS ion & electron imaging image processing Sample stage is not moved between sectioning and ion/electron imaging. FIB Imaging Plane z y x LMIG

11 Why Use FIB-TOF Tomography? Need for isotopic, chemical and molecular analysis which is not possible with FIB-SEM/EDS or FIB-SIMS. Other advantages of TOF-SIMS surface and trace level sensitivity, analysis of insulators and dielectrics, fast data acquisition, full mass spectrum at every image pixel, & retrospective analysis. 3D imaging without the artifacts of sputter depth profiling differential sputtering loss of true 3D distributions accumulated beam damage loss of chemical / molecular info particles, pores & voids loss of true 3D distributions

12 3D FIB-TOF Tomography of CuW Composite LMIG-induced secondary electron (SE) images. The roughness observed ~ 10µm at the bottom of the FIB crater is the result of differential sputtering. Depth profile analysis would produce 3D images without the true distributions of W and Cu. 20 µm x 20 µm FOV. However, the elemental/chemical distribution is perfectly preserved in the FIB-milled section. Twenty (20) FIB-TOF tomography cycles at 0.5 µm each.

13 Profiles & 3D Images from FIB-TOF Data Imaged volume is 20 µm x 20 µm x 10 µm Counts Per Second 10 5 Total Ion WO Cu Depth (nm)

14 Why Study SOFCs? Understand growth conditions, materials and performance: Unintentional contaminants Layer and interfacial homogeneity; interlayer diffusion Optimized growth conditions Evaluate materials versus conversion efficiency Fuel cell geometry versus start-up time and operational efficiency Understand electro-chemical degradation over lifetime: Cathodic and electrolytic poisoning Change in electrolytic O 2- transport resistance versus temperature Goals to reduce the operational temperature (currently > 600 o C) and the start-up time (currently hours)

15 Initial FIB-Milled Crater in a SOFC LMIG-induced secondary electron (SE) images. (A) (B) (C) cathode electrolyte electrolyte anode PrSrCoOx Gd-doped CeOx Sc-stabilized ZrOx SE Image (after milling). SE Image (after polish). SE Image (after polish).

16 Measuring the FIB-Milled Z-Scale LMIG-induced secondary electron (SE) images. Z-direction 300 µm x 300 µm FOV.

17 Mass Spectral Characterization Data removed due to pending publication. With the TRIFT mass analyzer, the full mass spectrum is collected at every image pixel.

18 Identification of Matrix Components Isotopic abundances are used to confirm peak assignments. Data removed due to pending publication. Example showing identification of Sr, Y and Zr.

19 3D Tomography Data of a SOFC Imaged volume is 50 µm x 50 µm x 10 µm. 50 µm in X Data removed due to pending publication. 50 µm in Y 50 µm in Y 10 µm in Z 50 µm in X 10 µm in Z

20 3D FIB-TOF Imaging of a SOFC Imaged volume is 50 µm x 50 µm x 10 µm. Data removed due to pending publication. Sr +, Ce +, Zr + and K + 3D iso-surface overlays.

21 3D FIB-TOF Imaging of a SOFC Imaged volume is 50 µm x 50 µm x 10 µm.

22 Developments in Organic FIB-TOF Analysis of 10% Cocaine-Doped PLGA Spheres After FIB milling, can molecular ion signals be recovered by cluster ion sputter cleaning?

23 FIB Cut of Cocaine (10 wt.%)/plga Sphere Side view of FIB-milled sphere. Following high kv FIB milling. FIB cut direction

24 Depth Profile of Cocaine/PLGA Particle 20 kev C 60+ sputter removal of FIB straggle Cocaine [M+H] + image at surface. Counts Per Second Si (28m/z) Ca (40m/z) C 3 H 4 O (56m/z) C 2 H 3 (27m/z) Cocaine [M+H] + image below straggle region M+H (304m/z) Depth (nm)

25 Summary & Outlook TRIFT analyzer allows ion and electron imaging of a FIB-milled specimen without moving the sample from the milling position. This is advantageous for 3D imaging by FIB-TOF tomography. The TRIFT analyzer produces high sensitivity, useful mass resolution and high mass scale linearity for exploratory analysis. FIB milling of bulk insulators may be achieved, with or without a conductive capping layer. The need for post-mill FIB polishing is evident. Cluster ion sputtering may also be used to remove the FIB straggle. Work on 3D FIB-TOF imaging of cells and tissues is underway. The sample preparation, e.g. soft-matrix embedding, is found to be important.

26 PHI TRIFT V nanotof Thank You!

PHI nanotof II TOF-SIMS. 1

PHI nanotof II TOF-SIMS.   1 PHI nanotof II TOF-SIMS 1 25+ Years of TOF-SIMS at PHI Pulsed Cs Gun Direct Imaging TRIFT I LMIG PHI Purchased CE&A TOF-SIMS business New Cs gun 200 mm 300 mm TRIFT II Dual Source Column Larger Analyzer

More information

A DIVISION OF ULVAC-PHI. Time-of-Flight Secondary Ion Mass Spectrometer with Parallel Imaging MS/MS for Confident Molecular Identification

A DIVISION OF ULVAC-PHI. Time-of-Flight Secondary Ion Mass Spectrometer with Parallel Imaging MS/MS for Confident Molecular Identification A DIVISION OF ULVAC-PHI Time-of-Flight Secondary Ion Mass Spectrometer with Parallel Imaging MS/MS for Confident Molecular Identification Designed for Confident Molecular Identification and Superior Imaging

More information

Applications of XPS, AES, and TOF-SIMS

Applications of XPS, AES, and TOF-SIMS Applications of XPS, AES, and TOF-SIMS Scott R. Bryan Physical Electronics 1 Materials Characterization Techniques Microscopy Optical Microscope SEM TEM STM SPM AFM Spectroscopy Energy Dispersive X-ray

More information

Large Area TOF-SIMS Imaging of the Antibacterial Distribution in Frozen-Hydrated Contact Lenses

Large Area TOF-SIMS Imaging of the Antibacterial Distribution in Frozen-Hydrated Contact Lenses Large Area TOF-SIMS Imaging of the Antibacterial Distribution in Frozen-Hydrated Contact Lenses Overview: Imaging by time-of-flight secondary ion mass spectrometry (TOF-SIMS) is accomplished in a vacuum

More information

produced a sputter rate of 0.9 nm/s for the radially profiled, un-etched wires. A slightly

produced a sputter rate of 0.9 nm/s for the radially profiled, un-etched wires. A slightly Supporting Information: Beam Current and Sputtering Rate: Using a 16 kev Cs + primary ion beam and a 1 µm 2 rastered area, a 10 pa beam current produced a sputter rate of 0.9 nm/s for the radially profiled,

More information

Surface and Interface Analysis. Investigations of Molecular Depth Profiling with Dual Beam Sputtering. Journal: Surface and Interface Analysis

Surface and Interface Analysis. Investigations of Molecular Depth Profiling with Dual Beam Sputtering. Journal: Surface and Interface Analysis Surface and Interface Analysis Investigations of Molecular Depth Profiling with Dual Beam Sputtering Journal: Surface and Interface Analysis Manuscript ID: Draft Wiley - Manuscript type: SIMS proceedings

More information

IONTOF. Latest Developments in 2D and 3D TOF-SIMS Analysis. Surface Analysis Innovations and Solutions for Industry 2017 Coventry

IONTOF. Latest Developments in 2D and 3D TOF-SIMS Analysis. Surface Analysis Innovations and Solutions for Industry 2017 Coventry Latest Developments in 2D and 3D TOF-SIMS Analysis Surface Analysis Innovations and Solutions for Industry 2017 Coventry 12.10.2017 Matthias Kleine-Boymann Regional Sales Manager matthias.kleine-boymann@iontof.com

More information

ToF-SIMS or XPS? Xinqi Chen Keck-II

ToF-SIMS or XPS? Xinqi Chen Keck-II ToF-SIMS or XPS? Xinqi Chen Keck-II 1 Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) Not ToF MS (laser, solution) X-ray Photoelectron Spectroscopy (XPS) 2 3 Modes of SIMS 4 Secondary Ion Sputtering

More information

Auger Electron Spectroscopy Overview

Auger Electron Spectroscopy Overview Auger Electron Spectroscopy Overview Also known as: AES, Auger, SAM 1 Auger Electron Spectroscopy E KLL = E K - E L - E L AES Spectra of Cu EdN(E)/dE Auger Electron E N(E) x 5 E KLL Cu MNN Cu LMM E f E

More information

MS482 Materials Characterization ( 재료분석 ) Lecture Note 12: Summary. Byungha Shin Dept. of MSE, KAIST

MS482 Materials Characterization ( 재료분석 ) Lecture Note 12: Summary. Byungha Shin Dept. of MSE, KAIST 2015 Fall Semester MS482 Materials Characterization ( 재료분석 ) Lecture Note 12: Summary Byungha Shin Dept. of MSE, KAIST 1 Course Information Syllabus 1. Overview of various characterization techniques (1

More information

Ionization Techniques Part IV

Ionization Techniques Part IV Ionization Techniques Part IV CU- Boulder CHEM 5181 Mass Spectrometry & Chromatography Presented by Prof. Jose L. Jimenez High Vacuum MS Interpretation Lectures Sample Inlet Ion Source Mass Analyzer Detector

More information

PHI Model 06-C60 Sputter Ion Gun

PHI Model 06-C60 Sputter Ion Gun PHI Model 6-C6 Sputter Ion Gun Introduction: Physical Electronics introduced the model 6-C6 C 6 sputter ion gun and its unique capabilities for surface cleaning and depth profiling of soft materials (figure

More information

Interfacial Chemistry in Solid-state Batteries: Formation of

Interfacial Chemistry in Solid-state Batteries: Formation of Supporting Information Interfacial Chemistry in Solid-state Batteries: Formation of Interphase and Its Consequences Shaofei Wang, Henghui Xu, Wangda Li, Andrei Dolocan and Arumugam Manthiram* Materials

More information

XPS/UPS and EFM. Brent Gila. XPS/UPS Ryan Davies EFM Andy Gerger

XPS/UPS and EFM. Brent Gila. XPS/UPS Ryan Davies EFM Andy Gerger XPS/UPS and EFM Brent Gila XPS/UPS Ryan Davies EFM Andy Gerger XPS/ESCA X-ray photoelectron spectroscopy (XPS) also called Electron Spectroscopy for Chemical Analysis (ESCA) is a chemical surface analysis

More information

Secondary-Ion Mass Spectrometry

Secondary-Ion Mass Spectrometry Principle of SIMS composition depth profiling with surface analysis techniques? Secondary-Ion Mass Spectrometry erosion of specimen surface by energetic particle bombardment sputtering two possibilities

More information

FIB - SIMS. Focussed Ion Beam Secondary Ion Mass Spectrometry.

FIB - SIMS. Focussed Ion Beam Secondary Ion Mass Spectrometry. FIB - SIMS Focussed Ion Beam Secondary Ion Mass Spectrometry Outline Introduction to Hiden Analytical Introduction to SIMS FIB-SIMS - Introduction and key features FIB-SIMS - Applications data Hiden SIMS

More information

This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and

This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and education use, including for instruction at the authors institution

More information

TECHNIC A L WORK ING GROUP ITWG GUIDELINE ON SECONDARY ION MASS SPECTROMETRY (SIMS)

TECHNIC A L WORK ING GROUP ITWG GUIDELINE ON SECONDARY ION MASS SPECTROMETRY (SIMS) NUCLE A R FORENSIC S INTERN ATION A L TECHNIC A L WORK ING GROUP ITWG GUIDELINE ON SECONDARY ION MASS SPECTROMETRY (SIMS) EXECUTIVE SUMMARY Secondary Ion Mass Spectrometry (SIMS) is used for elemental

More information

Chemical Analysis in TEM: XEDS, EELS and EFTEM. HRTEM PhD course Lecture 5

Chemical Analysis in TEM: XEDS, EELS and EFTEM. HRTEM PhD course Lecture 5 Chemical Analysis in TEM: XEDS, EELS and EFTEM HRTEM PhD course Lecture 5 1 Part IV Subject Chapter Prio x-ray spectrometry 32 1 Spectra and mapping 33 2 Qualitative XEDS 34 1 Quantitative XEDS 35.1-35.4

More information

( 1+ A) 2 cos2 θ Incident Ion Techniques for Surface Composition Analysis Ion Scattering Spectroscopy (ISS)

( 1+ A) 2 cos2 θ Incident Ion Techniques for Surface Composition Analysis Ion Scattering Spectroscopy (ISS) 5.16 Incident Ion Techniques for Surface Composition Analysis 5.16.1 Ion Scattering Spectroscopy (ISS) At moderate kinetic energies (few hundred ev to few kev) ion scattered from a surface in simple kinematic

More information

Nanoscale Chemical Characterization: Moving to 3 Dimensions

Nanoscale Chemical Characterization: Moving to 3 Dimensions Nanoscale Chemical Characterization: Moving to 3 Dimensions Eric B. Steel Chemical Science & Technology Laboratory National Institute of Standards & Technology Outline What is and why do we need chemical

More information

Auger Electron Spectroscopy

Auger Electron Spectroscopy Auger Electron Spectroscopy Auger Electron Spectroscopy is an analytical technique that provides compositional information on the top few monolayers of material. Detect all elements above He Detection

More information

The University of Alabama 1 st APT Workshop for Earth Sciences

The University of Alabama 1 st APT Workshop for Earth Sciences The University of Alabama 1 st APT Workshop for Earth Sciences January 2016 David Reinhard LEAP 5000 www.cameca.com Microstructure characterization technique (UHV) that uses field evaporation (high electric

More information

Surface and Interface Characterization of Polymer Films

Surface and Interface Characterization of Polymer Films Surface and Interface Characterization of Polymer Films Jeff Shallenberger, Evans Analytical Group 104 Windsor Center Dr., East Windsor NJ Copyright 2013 Evans Analytical Group Outline Introduction to

More information

Focused Ion Beam Induced Local Tungsten Deposition

Focused Ion Beam Induced Local Tungsten Deposition Focused Ion Beam Induced Local Tungsten Deposition H. Langfischer, B. Basnar, E. Bertagnolli Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 ien, Austria H. Hutter

More information

Application of the GD-Profiler 2 to the PV domain

Application of the GD-Profiler 2 to the PV domain Application of the GD-Profiler 2 to the PV domain GD Profiler 2 RF GDOES permits to follow the distribution of the elements as function of depth. This is an ultra fast characterisation technique capable

More information

Hiden SIMS Secondary Ion Mass Spectrometers. Analysers for surface, elemental and molecular analysis

Hiden SIMS Secondary Ion Mass Spectrometers. Analysers for surface, elemental and molecular analysis Hiden SIMS Secondary Ion Mass Spectrometers Analysers for surface, elemental and molecular analysis vacuum analysis surface science plasma diagnostics gas analysis SIMS Versatility SIMS is a high sensitivity

More information

MSE 321 Structural Characterization

MSE 321 Structural Characterization Auger Spectroscopy Auger Electron Spectroscopy (AES) Scanning Auger Microscopy (SAM) Incident Electron Ejected Electron Auger Electron Initial State Intermediate State Final State Physical Electronics

More information

The Composition of Poly(Ethylene Terephthalate) (PET) Surface Precipitates Determined at High Resolving Power by Tandem Mass Spectrometry Imaging

The Composition of Poly(Ethylene Terephthalate) (PET) Surface Precipitates Determined at High Resolving Power by Tandem Mass Spectrometry Imaging Microsc. Microanal., page 1 of 6 doi:10.1017/s1431927617000654 The Composition of Poly(Ethylene Terephthalate) (PET) Surface Precipitates Determined at High Resolving Power by Tandem Mass Spectrometry

More information

Interfacial Chemistry and Adhesion Phenomena: How to Analyse and How to Optimise

Interfacial Chemistry and Adhesion Phenomena: How to Analyse and How to Optimise Interfacial Chemistry and Adhesion Phenomena: How to Analyse and How to Optimise John F Watts Department of Mechanical Engineering Sciences The Role of Surface Analysis in Adhesion Studies Assessing surface

More information

Multi-technique photoelectron spectrometer for micro-area spectroscopy and imaging

Multi-technique photoelectron spectrometer for micro-area spectroscopy and imaging Multi-technique photoelectron spectrometer for micro-area spectroscopy and imaging U. Manju, M. Sreemony and A. K. Chakraborty In this note we present the new multipurpose photoelectron spectroscopy facility

More information

CIM PACA Characterisation Lab

CIM PACA Characterisation Lab CIM PACA Characterisation Lab Your partner of choice for the chemical characterisation of your materials Partners: Who are we? The CIM PACA Characterisation Lab was registered in 2005 as a not-for-profit

More information

Secondaryionmassspectrometry

Secondaryionmassspectrometry Secondaryionmassspectrometry (SIMS) 1 Incident Ion Techniques for Surface Composition Analysis Mass spectrometric technique 1. Ionization -Electron ionization (EI) -Chemical ionization (CI) -Field ionization

More information

raw materials C V Mn Mg S Al Ca Ti Cr Si G H Nb Na Zn Ni K Co A B C D E F

raw materials C V Mn Mg S Al Ca Ti Cr Si G H Nb Na Zn Ni K Co A B C D E F Today s advanced batteries require a range of specialized analytical tools to better understand the electrochemical processes that occur during battery cycling. Evans Analytical Group (EAG) offers a wide-range

More information

X-Ray Photoelectron Spectroscopy (XPS) Prof. Paul K. Chu

X-Ray Photoelectron Spectroscopy (XPS) Prof. Paul K. Chu X-Ray Photoelectron Spectroscopy (XPS) Prof. Paul K. Chu X-ray Photoelectron Spectroscopy Introduction Qualitative analysis Quantitative analysis Charging compensation Small area analysis and XPS imaging

More information

Secondary ion mass spectrometry (SIMS)

Secondary ion mass spectrometry (SIMS) Secondary ion mass spectrometry (SIMS) ELEC-L3211 Postgraduate Course in Micro and Nanosciences Department of Micro and Nanosciences Personal motivation and experience on SIMS Offers the possibility to

More information

ECE Semiconductor Device and Material Characterization

ECE Semiconductor Device and Material Characterization ECE 4813 Semiconductor Device and Material Characterization Dr. Alan Doolittle School of Electrical and Computer Engineering Georgia Institute of Technology As with all of these lecture slides, I am indebted

More information

Case Study of Electronic Materials Packaging with Poor Metal Adhesion and the Process for Performing Root Cause Failure Analysis

Case Study of Electronic Materials Packaging with Poor Metal Adhesion and the Process for Performing Root Cause Failure Analysis Case Study of Electronic Materials Packaging with Poor Metal Adhesion and the Process for Performing Root Cause Failure Analysis Dr. E. A. Leone BACKGRUND ne trend in the electronic packaging industry

More information

MSE 321 Structural Characterization

MSE 321 Structural Characterization Auger Spectroscopy Auger Electron Spectroscopy (AES) Scanning Auger Microscopy (SAM) Incident Electron Ejected Electron Auger Electron Initial State Intermediate State Final State Physical Electronics

More information

Interaction of ion beams with matter

Interaction of ion beams with matter Interaction of ion beams with matter Introduction Nuclear and electronic energy loss Radiation damage process Displacements by nuclear stopping Defects by electronic energy loss Defect-free irradiation

More information

Secondary Ion Mass Spectrometry (SIMS)

Secondary Ion Mass Spectrometry (SIMS) Secondary Ion Mass Spectrometry (SIMS) SIMS: a desorption/ionization technique 1960s - A. Benninghoven, University of Münster, Germany (Benninghoven A., Rudenauer F.G., Werner H.W., Secondary Ion Mass

More information

Observations Regarding Automated SEM and SIMS Analysis of Minerals. Kristofor Ingeneri. April 22, 2009

Observations Regarding Automated SEM and SIMS Analysis of Minerals. Kristofor Ingeneri. April 22, 2009 Observations Regarding Automated SEM and SIMS Analysis of Minerals Kristofor Ingeneri April 22, 2009 Forensic Geoscience A field of inquiry that utilizes techniques developed in the geosciences (geology,

More information

The analysis of particles of nuclear material finding the proverbial needle in a hay stack

The analysis of particles of nuclear material finding the proverbial needle in a hay stack San Diego, 18-22 February 2010 AAAS Annual Meeting 1 The analysis of particles of nuclear material finding the proverbial needle in a hay stack AAAS Annual Meeting San Diego, February 19, 2010 Klaus Luetzenkirchen

More information

Thin Pd Film : 400A CaO and Pd Layers :1000A Bulk Pd : 0.1mm

Thin Pd Film : 400A CaO and Pd Layers :1000A Bulk Pd : 0.1mm Iwamura, Y., et al. Low Energy Nuclear Transmutation In Condensed Matter Induced By D Gas Permeation Through Complexes: Correlation Between Deuterium Flux And Nuclear oducts. in Tenth International Conference

More information

Gaetano L Episcopo. Scanning Electron Microscopy Focus Ion Beam and. Pulsed Plasma Deposition

Gaetano L Episcopo. Scanning Electron Microscopy Focus Ion Beam and. Pulsed Plasma Deposition Gaetano L Episcopo Scanning Electron Microscopy Focus Ion Beam and Pulsed Plasma Deposition Hystorical background Scientific discoveries 1897: J. Thomson discovers the electron. 1924: L. de Broglie propose

More information

Identification of Getter Defects in high-energy self-implanted Silicon at Rp/2

Identification of Getter Defects in high-energy self-implanted Silicon at Rp/2 Identification of Getter Defects in high-energy self-implanted Silicon at Rp R. Krause-Rehberg 1, F. Börner 1, F. Redmann 1, J. Gebauer 1, R. Kögler 2, R. Kliemann 2, W. Skorupa 2, W. Egger 3, G. Kögel

More information

MANUFACTURING OF MICROPOROUS CERAMIC MEMBRANES FOR ENVIRONMENTAL APPLICATIONS I. CO 2 -free power plants II. Fuel cells

MANUFACTURING OF MICROPOROUS CERAMIC MEMBRANES FOR ENVIRONMENTAL APPLICATIONS I. CO 2 -free power plants II. Fuel cells Mitglied der Helmholtz-Gemeinschaft Innovation for Sustainable Production i-sup 2008 Congrescentrum Oud Sint-Jan, Brugge 21. 24. April 2008 MANUFACTURING OF MICROPOROUS CERAMIC MEMBRANES FOR ENVIRONMENTAL

More information

Electrostatic Bonding of Silicon-to-ITO coated #7059 Glass using Li-doped Oxide Interlayer

Electrostatic Bonding of Silicon-to-ITO coated #7059 Glass using Li-doped Oxide Interlayer Journal of the Korean Physical Society, Vol. 33, No., November 1998, pp. S406 S410 Electrostatic Bonding of Silicon-to-ITO coated #7059 Glass using Li-doped Oxide Interlayer Jee-Won Jeong, Byeong-Kwon

More information

Characterization of Ultra-Shallow Implants Using Low-Energy Secondary Ion Mass Spectrometry: Surface Roughening under Cesium Bombardment

Characterization of Ultra-Shallow Implants Using Low-Energy Secondary Ion Mass Spectrometry: Surface Roughening under Cesium Bombardment Characterization of Ultra-Shallow Implants Using Low-Energy Secondary Ion Mass Spectrometry: Surface Roughening under Cesium Bombardment vyuji Kataoka vmayumi Shigeno vyoko Tada vkazutoshi Yamazaki vmasataka

More information

Chapter 9. Electron mean free path Microscopy principles of SEM, TEM, LEEM

Chapter 9. Electron mean free path Microscopy principles of SEM, TEM, LEEM Chapter 9 Electron mean free path Microscopy principles of SEM, TEM, LEEM 9.1 Electron Mean Free Path 9. Scanning Electron Microscopy (SEM) -SEM design; Secondary electron imaging; Backscattered electron

More information

Depth profiling of Organic Films using mixed C60 + and Ar + Ion-Sputtering

Depth profiling of Organic Films using mixed C60 + and Ar + Ion-Sputtering Principle of Depth Profile Depth profiling of rganic Films using mixed C6 + and Ar + Ion-puttering putter Ion Beam Jing-Jong hyue, Ph.D. Analysis Depth ".5-1 nm# Research Center for Applied ciences, Academia

More information

Auger Electron Spectrometry. EMSE-515 F. Ernst

Auger Electron Spectrometry. EMSE-515 F. Ernst Auger Electron Spectrometry EMSE-515 F. Ernst 1 Principle of AES electron or photon in, electron out radiation-less transition Auger electron electron energy properties of atom 2 Brief History of Auger

More information

PHI 5000 Versaprobe-II Focus X-ray Photo-electron Spectroscopy

PHI 5000 Versaprobe-II Focus X-ray Photo-electron Spectroscopy PHI 5000 Versaprobe-II Focus X-ray Photo-electron Spectroscopy The very basic theory of XPS XPS theroy Surface Analysis Ultra High Vacuum (UHV) XPS Theory XPS = X-ray Photo-electron Spectroscopy X-ray

More information

TESCAN S New generation of FIB-SEM microscope

TESCAN S New generation of FIB-SEM microscope TESCAN S New generation of FIB-SEM microscope rising standards in sample preparation Key Features SEM COLUMN Versatile system for unlimited applications: resolution imaging (0.9 nm at 15 kev, 1.4 nm at

More information

4H SiC Schottky diodes under ESD and thermal stresses: A failure analysis method.

4H SiC Schottky diodes under ESD and thermal stresses: A failure analysis method. 4H SiC Schottky diodes under ESD and thermal stresses: A failure analysis method. Pascal DHERBECOURT Groupe de Physique des Matériaux UMR CNRS 6634 The first part of the presentation reports electrical

More information

A DIVISION OF ULVAC-PHI

A DIVISION OF ULVAC-PHI A DIVISION OF ULVAC-PHI X-ray photoelectron spectroscopy (XPS/ESCA) is the most widely used surface analysis technique and has many well established industrial and research applications. XPS provides

More information

The goal of this project is to enhance the power density and lowtemperature efficiency of solid oxide fuel cells (SOFC) manufactured by atomic layer

The goal of this project is to enhance the power density and lowtemperature efficiency of solid oxide fuel cells (SOFC) manufactured by atomic layer Stanford University Michael Shandalov1, Shriram Ramanathan2, Changhyun Ko2 and Paul McIntyre1 1Department of Materials Science and Engineering, Stanford University 2Division of Engineering and Applied

More information

Analysis By Time-Of-Flight Secondary Ion Mass Spectroscopy or Nuclear Products In Hydrogen Penetration Through Palladium

Analysis By Time-Of-Flight Secondary Ion Mass Spectroscopy or Nuclear Products In Hydrogen Penetration Through Palladium Yamada, H., et al. Analysis By Time-Of-Flight Secondary Ion Mass Spectroscopy For Nuclear Products In Hydrogen Penetration Through Palladium. in Tenth International Conference on Cold Fusion. 2003. Cambridge,

More information

Dr. Tim Nunney Thermo Fisher Scientific, East Grinstead, UK Dr. Nick Bulloss Thermo Fisher Scientific, Madison, WI, USA Dr. Harry Meyer III Oak Ridge

Dr. Tim Nunney Thermo Fisher Scientific, East Grinstead, UK Dr. Nick Bulloss Thermo Fisher Scientific, Madison, WI, USA Dr. Harry Meyer III Oak Ridge Dr. Tim Nunney Thermo Fisher Scientific, East Grinstead, UK Dr. Nick Bulloss Thermo Fisher Scientific, Madison, WI, USA Dr. Harry Meyer III Oak Ridge National Laboratory, TN, USA Introduction New materials

More information

Supporting Online Material for

Supporting Online Material for www.sciencemag.org/cgi/content/full/1142021/dc1 Supporting Online Material for Remnants of the Early Solar System Water Enriched in Heavy Oxygen Isotopes Naoya Sakamoto, Yusuke Seto, Shoichi Itoh, Kiyoshi

More information

Reduced preferential sputtering of TiO 2 (and Ta 2 O 5 ) thin films through argon cluster ion bombardment.

Reduced preferential sputtering of TiO 2 (and Ta 2 O 5 ) thin films through argon cluster ion bombardment. NATIOMEM Reduced preferential sputtering of TiO 2 (and Ta 2 O 5 ) thin films through argon cluster ion bombardment. R. Grilli *, P. Mack, M.A. Baker * * University of Surrey, UK ThermoFisher Scientific

More information

ToF-SIMS analysis of glass fiber cloths for PCB manufacturing

ToF-SIMS analysis of glass fiber cloths for PCB manufacturing ToF-SIMS analysis of glass fiber cloths for PCB manufacturing Dylan Boday 1, Michael Haag 2, Joe Kuczynski 3, Markus Schmidt 2, Michael Wahl 4, Johannes Windeln 2 1 IBM Systems & Technology Group, 9000

More information

Molecular depth profiling with reactive ions, or why chemistry matters in sputtering.

Molecular depth profiling with reactive ions, or why chemistry matters in sputtering. Molecular depth profiling with reactive ions, or why chemistry matters in sputtering. L. Houssiau, N. Mine, N. Wehbe Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP),

More information

Defining quality standards for the analysis of solid samples

Defining quality standards for the analysis of solid samples Defining quality standards for the analysis of solid samples Thermo Scientific Element GD Plus Glow Discharge Mass Spectrometer Redefine your quality standards for the elemental analysis of solid samples

More information

EE C245 ME C218 Introduction to MEMS Design Fall 2007

EE C245 ME C218 Introduction to MEMS Design Fall 2007 EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 11: Bulk

More information

Segregated chemistry and structure on (001) and (100) surfaces of

Segregated chemistry and structure on (001) and (100) surfaces of Supporting Information Segregated chemistry and structure on (001) and (100) surfaces of (La 1-x Sr x ) 2 CoO 4 override the crystal anisotropy in oxygen exchange kinetics Yan Chen a, Helena Téllez b,c,

More information

Introduction to GC/MS

Introduction to GC/MS Why Mass Spectrometry? Introduction to GC/MS A powerful analytical technique used to: 1.Identify unknown compounds 2. Quantify known materials down to trace levels 3. Elucidate the structure of molecules

More information

Observation of Nuclear Transmutation Reactions induced by D 2

Observation of Nuclear Transmutation Reactions induced by D 2 Observation of Nuclear Transmutation Reactions induced by D 2 Gas Permeation through Pd Complexes Yasuhiro Iwamura 1, Takehiko Itoh 1, Mitsuru Sakano 1, Noriko Yamazaki 1, Shizuma Kuribayashi 1, Yasuko

More information

Secondary Ion Mass Spectrometry

Secondary Ion Mass Spectrometry Secondary Ion Mass Spectrometry Timothy P. Spila, Ph.D. Frederick Seitz Materials Research Laboratory University of Illinois at Urbana-Champaign Secondary Ion Mass Spectrometry SIMS is an analytical technique

More information

MT Electron microscopy Scanning electron microscopy and electron probe microanalysis

MT Electron microscopy Scanning electron microscopy and electron probe microanalysis MT-0.6026 Electron microscopy Scanning electron microscopy and electron probe microanalysis Eero Haimi Research Manager Outline 1. Introduction Basics of scanning electron microscopy (SEM) and electron

More information

ECE Semiconductor Device and Material Characterization

ECE Semiconductor Device and Material Characterization ECE 4813 Semiconductor Device and Material Characterization Dr. Alan Doolittle School of Electrical and Computer Engineering Georgia Institute of Technology As with all of these lecture slides, I am indebted

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION doi:10.1038/nature17653 Supplementary Methods Electronic transport mechanism in H-SNO In pristine RNO, pronounced electron-phonon interaction results in polaron formation that dominates the electronic

More information

QUESTIONS AND ANSWERS

QUESTIONS AND ANSWERS QUESTIONS AND ANSWERS (1) For a ground - state neutral atom with 13 protons, describe (a) Which element this is (b) The quantum numbers, n, and l of the inner two core electrons (c) The stationary state

More information

Secondary Ion Mass Spectrometry (SIMS)

Secondary Ion Mass Spectrometry (SIMS) CHEM53200: Lecture 10 Secondary Ion Mass Spectrometry (SIMS) Major reference: Surface Analysis Edited by J. C. Vickerman (1997). 1 Primary particles may be: Secondary particles can be e s, neutral species

More information

Secondary Ion Mass Spectrometry (SIMS) for Surface Analysis

Secondary Ion Mass Spectrometry (SIMS) for Surface Analysis Secondary Ion Mass Spectrometry (SIMS) for Surface Analysis General overview of SIMS - principles, ionization, advantages & limitations SIMS as a surface analysis technique - operation modes, information

More information

Secondary Ion Mass Spectrometry (SIMS) for Surface Analysis

Secondary Ion Mass Spectrometry (SIMS) for Surface Analysis Secondary Ion Mass Spectrometry (SIMS) for Surface Analysis General overview of SIMS - principles, ionization, advantages & limitations SIMS as a surface analysis technique - operation modes, information

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION DOI: 10.1038/NGEO2075 Appendixes: Hadean age for a post-magma-ocean zircon confirmed by atom-probe tomography JOHN W. VALLEY, AARON J. CAVOSIE, TAKAYUKI USHIKUBO, DAVID A. REINHARD,

More information

In-Situ Combination of TOF-SIMS and EDS Analysis During FIB Sectioning

In-Situ Combination of TOF-SIMS and EDS Analysis During FIB Sectioning In-Situ Combination of TOF-SIMS and EDS Analysis During FIB Sectioning V. Ray 1, E. Principe 2, T. Piper 2 vray@umd.edu 1. AIM Lab University of Maryland Nanocenter, College Park, MD 2. Tescan USA, Warrendale

More information

SIMS XVIII SIMS Course Depth Profiling

SIMS XVIII SIMS Course Depth Profiling SIMS XVIII SIMS Course Depth Profiling Fondazione Bruno Kessler Trento, Italy Fred A. Stevie Analytical Instrumentation Facility North Carolina State University Raleigh, NC USA fred_stevie@ncsu.edu Outline

More information

Secondary Ion Mass Spectrometry (SIMS) Thomas Sky

Secondary Ion Mass Spectrometry (SIMS) Thomas Sky 1 Secondary Ion Mass Spectrometry (SIMS) Thomas Sky Depth (µm) 2 Characterization of solar cells 0,0 1E16 1E17 1E18 1E19 1E20 0,2 0,4 0,6 0,8 1,0 1,2 P Concentration (cm -3 ) Characterization Optimization

More information

Sciences and Analyses of Materials Department Surface Treatment Unit Centre de Recherche Public Gabriel Lippmann Belvaux - Luxembourg

Sciences and Analyses of Materials Department Surface Treatment Unit Centre de Recherche Public Gabriel Lippmann Belvaux - Luxembourg Sciences and Analyses of Materials Department Surface Treatment Unit Centre de Recherche Public Gabriel Lippmann Belvaux - Luxembourg Surface Treatment Unit, UTS BRIEF history : 2006 2009 : launched of

More information

Geant4 simulation of SOI microdosimetry for radiation protection in space and aviation environments

Geant4 simulation of SOI microdosimetry for radiation protection in space and aviation environments Geant4 simulation of SOI microdosimetry for radiation protection in space and aviation environments Dale A. Prokopovich,2, Mark I. Reinhard, Iwan M. Cornelius 3 and Anatoly B. Rosenfeld 2 Australian Nuclear

More information

Electron beam scanning

Electron beam scanning Electron beam scanning The Electron beam scanning operates through an electro-optical system which has the task of deflecting the beam Synchronously with cathode ray tube which create the image, beam moves

More information

in Si by means of Positron Annihilation

in Si by means of Positron Annihilation Investigation of the Rp/2 /2-effect in Si by means of Positron Annihilation R. Krause-Rehberg, F. Börner, F. Redmann Universität Halle Martin-Luther-Universität R. Kögler, W. Skorupa Forschungszentrum

More information

Analysis of Cadmium (Cd) in Plastic Using X-ray Fluorescence Spectroscopy

Analysis of Cadmium (Cd) in Plastic Using X-ray Fluorescence Spectroscopy Analysis of Cadmium (Cd) in Plastic Using X-ray Fluorescence Spectroscopy Hiroshi Onodera Application & Research Center, JEOL Ltd. Introduction um, PBB and PBDE) are subject to usage restrictions in Europe.

More information

Feature-level Compensation & Control. Process Integration September 15, A UC Discovery Project

Feature-level Compensation & Control. Process Integration September 15, A UC Discovery Project Feature-level Compensation & Control Process Integration September 15, 2005 A UC Discovery Project Current Milestones Si/Ge-on-insulator and Strained Si-on-insulator Substrate Engineering (M28 YII.13)

More information

IV. Surface analysis for chemical state, chemical composition

IV. Surface analysis for chemical state, chemical composition IV. Surface analysis for chemical state, chemical composition Probe beam Detect XPS Photon (X-ray) Photoelectron(core level electron) UPS Photon (UV) Photoelectron(valence level electron) AES electron

More information

Nanoscale voxel spectroscopy by simultaneous EELS and EDS tomography

Nanoscale voxel spectroscopy by simultaneous EELS and EDS tomography Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2014 Supplementary Information Nanoscale voxel spectroscopy by simultaneous EELS and EDS tomography

More information

Understanding Surface Properties of Solid Oxide Electrodes for Electrochemical Energy Conversion Devices through Ion Beam Analysis

Understanding Surface Properties of Solid Oxide Electrodes for Electrochemical Energy Conversion Devices through Ion Beam Analysis SCIENTIFIC INSTRUMENT NEWS 2017 Vol. M A R C H 8 Technical magazine of Electron Microscope and Analytical Instruments. Article Understanding Surface Properties of Solid Oxide Electrodes for Electrochemical

More information

e - Galvanic Cell 1. Voltage Sources 1.1 Polymer Electrolyte Membrane (PEM) Fuel Cell

e - Galvanic Cell 1. Voltage Sources 1.1 Polymer Electrolyte Membrane (PEM) Fuel Cell Galvanic cells convert different forms of energy (chemical fuel, sunlight, mechanical pressure, etc.) into electrical energy and heat. In this lecture, we are interested in some examples of galvanic cells.

More information

Modeling Electron Emission From Diamond-Amplified Cathodes

Modeling Electron Emission From Diamond-Amplified Cathodes Modeling Electron Emission From Diamond-Amplified Cathodes D. A. Dimitrov Tech-X Corporation, Boulder, CO I. Ben-Zvi, T. Rao, J. Smedley, E. Wang, X. Chang Brookhaven National Lab, NY This work is funded

More information

Spring Semester 2012 Final Exam

Spring Semester 2012 Final Exam Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters

More information

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13

Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Self-study problems and questions Processing and Device Technology, FFF110/FYSD13 Version 2016_01 In addition to the problems discussed at the seminars and at the lectures, you can use this set of problems

More information

Approaches to analyzing insulators with Auger Electron Spectroscopy: Update and Overview

Approaches to analyzing insulators with Auger Electron Spectroscopy: Update and Overview Approaches to analyzing insulators with Auger Electron Spectroscopy: Update and Overview D. R. Baer, A. S. Lea, Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland

More information

Fig 1: Auger Electron Generation (a) Step 1 and (b) Step 2

Fig 1: Auger Electron Generation (a) Step 1 and (b) Step 2 Auger Electron Spectroscopy (AES) Physics of AES: Auger Electrons were discovered in 1925 but were used in surface analysis technique in 1968. Auger Electron Spectroscopy (AES) is a very effective method

More information

Development and characterization of 3D semiconductor X-rays detectors for medical imaging

Development and characterization of 3D semiconductor X-rays detectors for medical imaging Development and characterization of 3D semiconductor X-rays detectors for medical imaging Marie-Laure Avenel, Eric Gros d Aillon CEA-LETI, DETectors Laboratory marie-laure.avenel@cea.fr Outlines Problematic

More information

Semiconductor X-Ray Detectors. Tobias Eggert Ketek GmbH

Semiconductor X-Ray Detectors. Tobias Eggert Ketek GmbH Semiconductor X-Ray Detectors Tobias Eggert Ketek GmbH Semiconductor X-Ray Detectors Part A Principles of Semiconductor Detectors 1. Basic Principles 2. Typical Applications 3. Planar Technology 4. Read-out

More information

In-situ Ar Plasma Cleaning of Samples Prior to Surface Analysis

In-situ Ar Plasma Cleaning of Samples Prior to Surface Analysis In-situ Ar Plasma Cleaning of Samples Prior to Surface Analysis GE Global Research Vincent S. Smentkowski, Cameron Moore and Hong Piao 04GRC955, October 04 Public (Class ) Technical Information Series

More information

Dopant and Self-Diffusion in Semiconductors: A Tutorial

Dopant and Self-Diffusion in Semiconductors: A Tutorial Dopant and Self-Diffusion in Semiconductors: A Tutorial Eugene Haller and Hughes Silvestri MS&E, UCB and LBNL FLCC Tutorial 1/26/04 1 FLCC Outline Motivation Background Fick s Laws Diffusion Mechanisms

More information

MICRO-TOMOGRAPHY AND X-RAY ANALYSIS OF GEOLOGICAL SAMPLES

MICRO-TOMOGRAPHY AND X-RAY ANALYSIS OF GEOLOGICAL SAMPLES THE PUBLISHING HOUSE PROCEEDINGS OF THE ROMANIAN ACADEMY, Series A, OF THE ROMANIAN ACADEMY Volume 18, Number 1/2017, pp. 42 49 MICRO-TOMOGRAPHY AND X-RAY ANALYSIS OF GEOLOGICAL SAMPLES Ion GRUIA University

More information