Sensitization mechanisms of chemically amplified EUV resists and resist design for 22 nm node. Takahiro Kozawa and Seiichi Tagawa

Transcription

1 Sensitization mechanisms of chemically amplified EUV resists and resist design for 22 nm node Takahiro Kozawa and Seiichi Tagawa The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka , Japan

2 ITRS2005 Edition Year Lithography Roadmap Technology Node LWR (nm) Lithography Solution KrF excimer (248 nm) ArF excimer (193 nm) ArF excimer Immersion EUV 13.5 nm Energy (ev) nm LWR <1.2nm g line i line KrF ArF EUV EB Exposure tool Ionization potential of resist materials (~10eV) Ultimate Projection Lithography Transition point for acid generation mechanisms

3 Acid generation processes KrF, ArF EB, EUV Excitation path Acid generation Polymer Acid generator Other components Ionization path Direct excitation (In some case, electron transfer from excited polymer) hυ AG AG* Impurity Random energy deposition hυ M M M: Polymer th : thermalization th AG A G - T. Kozawa et al., Jpn. J. Appl. Phys. 31 (1992) 4301.

4 Resist pattern formation processes Exposure tool Proton Anion Position in y-direction (nm) Accumulated energy profile Interaction of radiation (photon, electron etc.) with materials Position in x-direction (nm) Conversion of energy to acids Decomposition of acid generators Latent acid image Different from each other for ionizing radiation Proton-anion distribution Acid diffusion Deprotection reaction Acid catalyzed image (Latent image after PEB) Development Significant impact on sensitivity, resolution and LER T. Kozawa et al., J. Appl. Phys. 99 (2006) T. Kozawa et al., J. Vac. Sci. Technol. B23 (2005) Fundamental research on acid generation is strongly needed.

5 LER formation mechanism Initial acid distribution Aerial image including reflection from substrate and flare Acid concentration Exposure dose Process factor Acid generation efficiency Material factor Shot noise Specific to EB and EUV Reaction of acid generator with low energy electron (~0eV) Catalytic chain reaction (acid diffusion and reaction) Pre-baking and post-exposure bake conditions Process (temperature and period) factor Diffusion constant of acid and base quencher Glass transition temperature of polymer Size of acid counter anion and base quencher Residual solvent Base quencher concentration Activation energy for catalytic reaction and diffusion Development and rinse Development time Temperature of developer Strength and molecular size of solvents Rinse Molecular weight Molecular dispersion Rigidity of polymer structure Polymer aggregation Crystallization Material factor Process factor Material factor Initial acid distribution Modification (latent image) Improved or Degraded LER T. Kozawa et al., J. Vac. Sci. Technol. B 25 (2007) 2295.

6 Interaction of EUV photon with material -spatial distribution- EUV photon Ionization Thermalization Ionization Resist Thermalization Ionization * Excitation Ionization Thermalization photon electron Si z Intensity of EUV (I) I z = αi Absorption coefficient (α) PHS : 3.8 μm -1 The number of secondary electrons can be estimated using W-value. T. Kozawa et al., J. Vac. Sci. Technol. B24 (2006) L27.

7 Average energy required to produce an ion pair (W-value) electron W-value = 100 (ev) G-value kev MeV photon Fig. Photon W-value for Ar as a function of photon energy. The solid circles show the present result, and the open squares are the data of Combecher for electrons. The solid curve represents the photon W-values calculated by the model here. The arrow indicates the 2p ionization threshold. [N. Saito, I. H. Suzuki, Radiat. Phys. Chem. 60, 291 (2001).] Insensitive to quality and energy for radiations above kev K-edge Carbon: 284 ev Oxygen: 547 ev W-value in PHS 22.2 ev (75 kev EB) [JVST B24, 3055(2006)] Average number of secondary electrons per EUV photon = 92.5/22.2 = 4.2

8 Angular distribution 4 nm on average Thermalization Elastic scattering Inelastic Mean free path Excitation of inter- and intra-molecular vibration = λ λ inelastic λ elastic λinelastic λ elastic Ineffective Acid generator Diffusion Directionality is largely lost during thermalization and subsequent diffusion. p AG ( electron)( R) = 0 R AG r C w AG t= 0 Anion probability density around ionization point wd ( D t) r 2 dr e p Uniform angular distribution ( R) = φ p ( R) acid ( ionization ) polymer AG( electron) T. Kozawa et al., J. Vac. Sci. Technol. B 25 (2007) 2295.

9 Acid generation efficiency φ acid (ionization ) Definition : Acid generation probability per ionization Proton generation φ f acid ( ionization) = polymer AG( electron) For PHS-based resist, Protons are generated through the deprotonation of polymer radical cation. Polymer structure dependent ( φ, φ ) Counteranion generation Anions are generated through the reaction of acid generators with secondary electrons. Acid generator structure dependent φ φ φ T. Kozawa et al., J. Photopolym. Sci. Technol. 20 (2007) 577. acid ( ionization ) polymer AG( electron)

10 Generation efficiency of counteranion per ionization Decomposition of acid generator through the reaction with low-energy electron Ionization w D t e Dynamics of low-energy electrons Coulomb interaction 1 = w w V 4πR kbt Diffusion Electron with excess energy - Thermalization Excitation of intramolecular vibration Subexcitational Subvibrational Parent Radical Cation AG C AG w Reaction with acid generator Energy exchange, excitation of intermolecular vibration Initial distribution 2 1 r r dr dr r r = = 0 exp 0 0 w t - Diffusion Coulomb Force Low Energy Electron Acid generator react with these low energy electrons. T. Kozawa et al., J. Vac. Sci. Technol. B22 (2004) ~ 0 ev Generation efficiency of counteranion per ionization : φ AG( electron) = 4π 0 r R AG r C w AG t = 0 r wr 2 2 dr drd( D t) e

11 Difference between EB and EUV EB EUV Multi spur effect ~40 nm Isolated pairs (Single spur) Onsager distance Where the thermal energy of electron correspond to the Coulomb potential. 2 e r c ε kt = 14 nm Stronger electric field in PHS T. Kozawa et al. J. Vac. Sci. Technol. B 25 (2007) 2481.

12 Difference in sensitization distance between EUV and EB Probability density of anion (/nm) Distance from ionization point (nm) (a) EB Probability density of anion (/nm) Distance from EUV absorption point (nm) (b) EUV Fig. Probability density of anion generated in PHS with 10 wt% TPS-tf by (a) an electron and (b) an EUV photon. Sensitization distance (ionization) 5.6 nm 6.3 nm Acid generation efficiency (ionization) 0.74 per ionization 0.62 per ionization 2.6 per photon T. Kozawa et al. J. Vac. Sci. Technol. B 25 (2007) 2481.

13 Quantum yield in chemically amplified resist acid = 2.6φ φ polymer acid ( excitation) φ Ionization path Excitation path φacid ( excitation) 0.02 ~ Deprotonation efficiency of polymer radical cation Protecting ratio φ polymer = 1 p( φ pg 1) Deprotonation efficiency of protecting group φ pg = ~ When p = 0.3, φ polymer = 0.74 ~ 0.92 φ acid [JJAP 44, 5836 (2005)] The quantum yield of typical resists is 2.0~2.8 with 10 wt% acid generator loading. T. Kozawa et al. J. Vac. Sci. Technol. B 25 (2007) 2481.

14 Resolution The increase in pattern formation efficiency is required to simultaneously meet the requirements for resolution, sensitivity, and LER. Sensitivity LER Pattern formation efficiency = Absorption efficiency of incident energy (absorption coefficient of polymer) X Quantum yield of acid X Efficiency of catalytic chain reaction Limited by side wall degradation Limited by secondary electron emission efficiency Limited by diffusion-controlled rate for chemical reaction T. Kozawa et al. Jpn. J. Appl. Phys. 47 (2008) in press

15 Concentration of protected unit (molecules nm -3 ) Limit of PHS-based chemically amplified resist Latent images of 22 nm line & space mj cm mj cm Distance (nm) Distance (nm) Intermediate region where protected and deprotected units coexist mj cm mj cm -2 1/ 0.0 dose The width expands with dependence. T. Kozawa et al. Jpn. J. Appl. Phys. 47 (2008) in press