Band Gap Engineering. Reading the Periodic Table and Understanding Optical and Electrical Properties in Semiconductors
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1 The Birnie Group solar class and website were created with much-appreciated support from the NSF CRCD Program under grants and Continuing Support from the McLaren Endowment is also greatly appreciated! Band Gap Engineering Reading the Periodic Table and Understanding Optical and Electrical Properties in Semiconductors Slides on these other topics might also be of interest (most collected during teaching years 2004 and 2005): Multi Junction Solar Device Design Molecular Beam Epitaxy Amorphous Silicon Solar Cells Transparent Conductors for Solar Anti Reflection Coatings for Solar Organic PV Dye Sensitized Solar Cells Working with Simple DC Motors for Student Solar Projects Examples of Previous Years Student Solar Projects Note: in some cases it may be possible to design custom courses that expand on the above materials (send me !) Journal Publications of Some Recent Research: (best viewed through department home index: Other Birnie Group Research: Sol-Gel Coating Quality and Defects Analysis (mostly Spin Coating): Solar Research at Rutgers: Broader Overview Solar and Electric Vehicles System Projects (early stage emphasis) Professor Dunbar P. Birnie, III
2 Solar Cell Design and Processing Band Gap and Association to Trends in the Periodic Table through doping and optical constant changes Dunbar P. Birnie, III Rutgers University Piscataway, NJ
3 Semiconductors Basically not insulating and also not metallic somewhere in between For many examples this comes from sp 3 hybridized covalent bonding that builds tetrahedral arrangements and very stiff and open structures Silicon and germanium are simple elemental semiconductors silicon dominates the solar market for now.
4 Silicon is Diamond Cubic Unit cell emphasizes the tetrahedral bonding arrangement of every Si atom: Source: Diamond_Cubic-F_lattice_animation.gif
5 Silicon s Location in the Periodic Table Source: commons.wikimedia.org/periodic table
6 Doping of Silicon P-type dopants come from group III and have one fewer electron than Silicon. This is then provides an empty bonding orbital and energy level that can accept an electron from elsewhere in the structure. These elements are, therefore acceptors. N-type dopants come from group V and have one excess electron to bring to the bonding. This electron can be donated to the electronic structure. These elements are, therefore donors. Source: adapted from commons.wikimedia.org/periodic table
7 III-V Compound Semiconductors Requires a 1:1 Ratio of Group- III and Group V elements, bonding alternates so every III atom is surrounded by four V atoms and similarly four III s around every V. Bonding gets weaker as we move DOWN on the periodic table. Melting points and bandgaps are smaller as we move down. Example phases: GaAs, GaN, AlSb, InP, etc, etc. etc. Source: adapted from commons.wikimedia.org/periodic table
8 GaAs in Zinc Blende Structure Source: OCW.mit.edu
9 Band Gaps and Lattice Size Important for many semiconductor growth methods such as MBE and CVD, when high crystal quality is required. Source: III-Vms-latgap.png
Characteristics of DC Motors
The Birnie Group solar class and website were created with much-appreciated support from the NSF CRCD Program under grants 0203504 and 0509886. Continuing Support from the McLaren Endowment is also greatly
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