Enhanced Chamber Management and Fault Detection in Plasma Etch Processes via SEERS(Self Excited Electron Resonance Spectroscopy)

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1 Enhanced Chamber Management and Fault Detection in Plasma Etch Processes via SEERS(Self Excited Electron Resonance Spectroscopy) *Kye Hyun Baek, Gopyo Lee, Yong Woo Lee, Gyung-Jin Min, Changjin Kang, Han-Ku Cho, and Joo-Tae Moon Semiconductor R&D Center 1

2 Outline Background SEERS(Self Excited Electron Resonance Spectroscopy)? Chamber and Process Monitoring through SEERS Minimization of Chamber Wall Condition Dependence Summary Semiconductor R&D Center 2

3 Background Why real-time process monitoring is necessary? Wafer size increase (200mm 300mm) Nanometer-scale Device Era Novel Process Scheme Uniformity Issues Smaller Process Window Complicated Device Integration High Polymeric Gas Adoption Various Process Mix Demand for process stability is significantly increased!! Real-time Process Monitoring / Fault Detection Plasma Monitoring Tool Parameter Monitoring Why plasma monitoring is more effective than tool parameter monitoring? Semiconductor R&D Center 3

4 Background Some Plasma Monitoring Tools Measurement Main application Advantage Disadvantage Comments OES Optical Emission Spectroscopy Relative emission intensities of excited species Endpoint detection Easy access via sight window Different species can be identified. Supports process development and analysis Interpretation needs high level of knowledge Requires data compression due to large amount of data -> PCA( Principal Component Analysis ) or Impact of chamber wall polymer Less than 10-4 of ground state density SEERS Self Excited Electron Resonance Spectroscopy RF current at chamber wall Process monitoring Provides real plasma parameters( electron density, collision rate ) Easy handling for process monitoring Needs access to chamber via passive sensor on ground potential Not available for all chamber types No impact of chamber wall polymer Model based calculation Supports process and chamber development Impedance Monitor RF voltage and current at matchbox RF maintenance Easy to understand Provides only fundamental or some harmonics No impact of chamber wall polymer Monitor truly transferred power to plasma Less relation to plasma Supports chamber development and analysis Semiconductor R&D Center 4

5 SEERS(Self Excited Electron Resonance Spectroscopy) SEERS(Self Excited Electron Resonance Spectroscopy)? Nonlinearity of Sheath Properties -non-linear part of sheath Matchbox RF generator - linear part of sheath -ohmic part of plasma bulk - inertia part of plasma bulk - linear part of sheath - non-linear part of sheath Harmonics in RF Current Geometric Resonance Damping Characteristics Model-Based Estimation Electron Plasma Frequency Electron Density stray capacitance Equivalent Electric Circuit of Plasma Reactor Electron Collision Rate Power Absorption Semiconductor R&D Center 5

6 SEERS(Self Excited Electron Resonance Spectroscopy) Basic Set-up for SEERS Coaxial sensor and cable Measured RF Current 1GHz, 2GS/s 50Ohms input SEERS algorithm Parameters (n e, ν, ) RF Power FFT OES Port RF Sensor Probe Viewport modified for SEERS Semiconductor R&D Center 6

7 SEERS(Self Excited Electron Resonance Spectroscopy) Electron Collision Rate vs. Electron Density : Effects of Chamber Idle Time Idle Time 6 Hour Sixth Wafer First Wafer No Idle Time Electron Collision Rate [1/s] Dummy 4ea First Wafer Sixth Wafer First Wafer Lot A Lot B Electron Density [1/cm3] First Wafer First Wafer One Point-One Wafer Electron collision rate is a more sensitive indicator for process drift!! Semiconductor R&D Center 7

8 SEERS(Self Excited Electron Resonance Spectroscopy) Physical Backgrounds to Electron Collision Rate Electron Collision Rate? Depends on the neutral s density. Depends on power and gas mixture. Impact of electrons on chemistry via heating. Feedback from chemistry via cross sections and relative concentration of species. Pressure/Gas Temperature Collision Cross-section x Thermal velocity ν eff 1.6 l Ubias 2πm e + 8kT πm e e p kt N k pkσ kv p electron with U bias : DC bias, l : plasma length p : total pressure, p k, : partial pressure, cross section of gas k T N σ k : gas temperature Stochastic heating Relative Concentration Ohmic heating Electron collision rate can be an universal index of plasma process!! Semiconductor R&D Center 8

9 Chamber and Process Monitoring through SEERS Detection of Extremely Small Changes in Chamber Lot A Collision Rate [1/s] 7.00E E E E E E E E Lot B Collision Rate[1/s] Flickering Time [s] 6.00E E E E E E E Time[s] Time-resolved collision rate data for different chamber conditions After Wet Cleaning Lot Date Time Lot Name Recipe EPD Time Herculse File Name 4 Lot ## 4 ~ ~ Lot ~ #10 ##### ###### ##### ## ## 4 ~ ~ Lot ~ #03 ##### ###### ##### ## ## 4 ~ ~ Lot ~ #09 ##### ###### ##### ## ## 4 ~ ~ Lot ~ #09 ##### ###### ##### 4 ~ ~ Lot ~ 12ea ##### ###### ##### ## ## 4 ~ ~ Lot ~ 14ea ##### ###### ##### 4 ~ ~ Lot ~ #08 ##### ###### ##### ## ## 4 ~ ~ Lot ~ 14ea ##### ###### ##### ## 4 ~ ~ Lot ~ 14ea ##### ###### ##### ## 4 ~ ~ Lot ~ 14ea ##### ###### ##### 4 ~ ~ Lot ~ #4,11,18 ###### ###### ##### ## ## 4 ~ ~ Lot ~ #05, #11 ##### ###### ##### ## 4 ~ ~ Lot ~ 18ea ##### ###### ##### ## 4 ~ ~ Lot ~ #01 ##### ###### ##### ## 4 ~ ~ Lot ~ #08 ##### ###### ##### ## 4 ~ ~ Lot A 19ea XXXXX ###### ##### ## 4 ~ ~ 4 ~ ~ Lot ~ #04 ##### ###### ##### ## 4 ~ ~ Lot ~ 14ea ##### ###### ##### ## 4 ~ ~ Lot ~ #05 ##### ###### ##### ## 4 ~ ~ Lot ~ 14ea ##### ###### ##### ## 4 ~ ~ Lot ~ #11 ##### ###### ##### ## 4 ~ ~ Lot ~ #01, #02 ##### ###### #### ## 4 ~ ~ Lot ~ #13 ##### ###### ##### ## 4 ~ ~ Lot ~ #19 ##### ##### ##### ## 4 ~ ~ Lot ~ #07 ##### ##### ##### ## 4 ~ ~ Lot ~ #05, #19 ##### ##### ##### ## 4 ~ ~ Lot ~ #08 ##### ##### ##### ## 4 ~ ~ Lot ~ 14ea ##### ##### ##### ## 4 ~ ~ Lot ~ #18 ##### ##### ##### ## 4 ~ ~ Lot ~ 14ea ##### ##### ##### ## 4 ~ ~ Lot ~ 11ea ##### ##### ##### ## 4 ~ ~ Lot ~ #19, #20 ##### ##### ##### ## 4 ~ ~ Lot ~ #20 ##### ##### ##### ## 4 ~ ~ Lot ~ #07 ##### ##### ##### ## 4 ~ ~ Lot ~ #02, #04 ##### ##### ##### ## 4 ~ ~ Lot B 21ea XXXXX ##### ##### ## 4 ~ ~ Lot ~ 14ea ##### ##### ##### ## Chamber History Semiconductor R&D Center 9

10 Chamber and Process Monitoring through SEERS Some Tool Parameter Data During Main Etch for Lot A and B Lot A Bias Power Source Power 10 8 Pressure APCAngle Forward Power(W) Total Pressure(mT) APC Angle 7000 Lot B Forward Power(W) Wafer Slot Bias Power Source Power Total Pressure(mT) Wafer Slot Pressure APCAngle APC Angle Wafer Slot Wafer Slot No Particular Event in Tool Parameters Except for Scattered Points!! Semiconductor R&D Center 10 * Scattered Points : Data Acquisition Problem.

11 Chamber and Process Monitoring through SEERS Remain Oxide Thickness after Gate Etch Tox 1.60E E+009 R=-0.958, SD=5.7217E7, N=13, P< Tox Linear Fit Thickness [nm] Chamber Clean Collision Rate [1/s] 1.40E E E E E E+008 R 2 =0.918 Date Thickness [nm] Thickness Variations vs. Date Thickness Variations vs. Collision Rate Electron collision rate explains trends of thickness!! Give us Two Benefits ; Thickness Data for All Wafers, Tight Process Control Semiconductor R&D Center 11

12 Chamber and Process Monitoring through SEERS Trench Depth Variation within a Lot Trench Depth(A) Trench Depth Electron Collision Rate [1/s] 5.50x x x x10 8 R= , SD= E7, N=17, P< BT Step Linear Fit First Wafer Slot in a Lot Wafer ID Trench Depth Variation within a Lot. Last Wafer A correlation between electron collision rate and trench depth is a bit high!! Electron Collision Rate [1/s] 3.50x x x x x x x x x x10 8 R 2 = R 2 =0.800 BT Polynominal Fit Trench Depth [A] Trench Depth [A] Electron Collision Rate of BT Step vs. Trench Depth Semiconductor R&D Center 12

13 Minimization of Chamber Wall Condition Dependence Current Situations of Chamber A Major Etching Gas Chemistry : HBr/O2/Cl2 Chemistry : Total Pressure : 50mT xhbr/ycl2/zo2 Chemistry : Higher HBr Condition x`hbr/y`cl2/z`o2 Chemistry : x``hbr/y``cl2/z``o2 Chemistry : x```hbr/y``cl2/z```o2 Chemistry : Lower HBr Condition Chamber Maintenance : HBr/O2 Chemistry : Total Pressure : 30mT ahbr/bo2 Chemistry : Higher HBr Condition ahbr/b O2 Chemistry : Higher HBr Condition a HBr/bO2 Chemistry : Lower HBr Condition * CF6/Ar chemistry for breakthrough step is common!! Manual Dry Cleaning According to RF Time. Before starting main lot, dummy wafers for conditioning are employed. In case of some devices, manual dry cleaning is also employed. Wet Cleaning Cycle : Around 25 Hour of RF Time Criteria for Starting Process after Wet Cleaning : Etch Rate, Particle Number After Chamber Conditioning. * Dry Cleaning Condition : HBr+Cl2+O2+SF6 Chemistry, Chamber Conditioning : HBr+Cl2+O2 Chemistry. Current Issues : Strong Chamber Wall Condition Dependence, Heavy Polymeric Particle Issues Semiconductor R&D Center 13

14 Minimization of Chamber Wall Condition Dependence Monitoring of Device A 1E9 Wet CLN Dry CLN Different Chemistry Different Chemistry Main Lot Wafer Dummy Wafer Different Chemistry Lot A-125 Electron Collision Rate [1/s] 1E8 1E7 Lot B-130 Lot D-56 Lot A-121 Lot C-171 Lot D-57 Lot C-170 Wet CLN Lot E-53 Dry CLN Lot B-120 Lot A-120 Lot D-55 Wet CLN Lot C-174 Lot A-119 Lot A-126 Dry CLN Lot A-124 Lot C-175 Wet CLN Different Chemistry One Point - One Wafer Date After wet-cleaning, collision rates of the lot are gradually going up. : Light Pink Arrows. Right before wet-cleaning, collision rates of the lot are going down. : Light Green Arrows. Semiconductor R&D Center 14

15 Minimization of Chamber Wall Condition Dependence Monitoring of Device A Effects of Dry Cleaning Process Effects of Different Chemistries Dry cleaning or different chemistries seems to change the chamber wall conditions a lot. So, it takes several wafers to get back to normal conditions. Semiconductor R&D Center 15

16 Minimization of Chamber Wall Condition Dependence Monitoring of Device B 1E11 Wet CLN Main Lot Wafer Dummy Wafer Dry CLN Electron Collision Rate [1/s] 1E10 1E9 1E8 Lot A-115 Lot A-114 Wet CLN Lot A-116 Lot A-113 Wet CLN Lot A-117 Lot A-122 Wet CLN Continual Process Lot A-120 Lot A-123 Lot A-124 Wet CLN Lot A-125 HBr Gas Change One Point - One Wafer 1E7 Date Collision Rate Higher Than 1E9/sec : Unstable Period, Large Fluctuations Collision Rate lower than 4E8/sec : Stable Period, Straight Collision Rate Trends. What happened between these periods? Two Times Wet Cleaning, HBr Gas Change? Semiconductor R&D Center 16

17 Minimization of Chamber Wall Condition Dependence Adoption of In-situ Chamber Cleaning Situations in Chamber A Previous Maintenance Manual Dry Cleaning According to RF Time. Dummy Wafers for conditioning. Current Maintenance In-situ Chamber Cleaning Every Wafer Wet Cleaning Cycle : Around 25 Hour of RF Time Wet Cleaning Cycle : now Evaluating * Dry Cleaning Condition : HBr+Cl2+O2+SF6 Chemistry, Chamber Conditioning : HBr+Cl2+O2 Chemistry. * In-situ Chamber Cleaning (ICC) Condition : SF6 Chemistry In-situ chamber cleaning might give us benefits; Chamber can be kept clean and wafer-to-wafer(also lot-to-lot) variation can be minimized!! Semiconductor R&D Center 17

18 Minimization of Chamber Wall Condition Dependence Effects of ICC on Wafer-to-Wafer Variations 1E10 Mean Electron Collision Rate - Wet Cleaning Electron Collision Rate [1/s] 1E9 1E8 Lot B-33 - ICC from here Lot B-34 RF time 0hour Lot B-35 RF time 1hour Lot B-38 RF time 16hour Lot B-40 RF time 17hour Lot B-41 RF time 19hour Lot B-43 RF time 21hour Lot B-42 RF time 25hour 1E7 Lot ID One Point - One Wafer After adoption of ICC, wafer-to-wafer variations decrease dramatically!! Conditioning process after wet cleaning seems to be insufficient. Semiconductor R&D Center 18

19 Minimization of Chamber Wall Condition Dependence Comparison between Etched Depth Variations: Manual Dry Cleaning vs. ICC Etched Depth Variations within a Lot SLOT 10 SLOT 20 SLOT AVG DRY CLEAN ICC c / ] X_Z_ /=/ M /D =/ D8ODK =; 9D/ F /=/ M /D =/ :::D/8/ODK =:9 D Adoption of ICC reduces depth variations by nearly 50%!! Semiconductor R&D Center 19

20 Minimization of Chamber Wall Condition Dependence Electron Collision Rate for RF Time 27Hours 1E10 ICC 2500 Etched Depth Profile Angle 90 Electron Collision Rate [1/s] 1E9 Wet Clean RF Time 27Hours Wet Clean Trench Depth [A] RF Time [Hour] Profile Angle [ o ] 1E Excel Time Etched Depth and Profile as a Function of RF Time Electron collision rate maintains 1E9~2E9 level for RF time 27 hours. During this period, process variations are quite small irrespective of RF time. Can electron collision rate of ICC step be a barometer of wet cleaning period? Semiconductor R&D Center 20

21 Minimization of Chamber Wall Condition Dependence Potential Problems by Adoption of ICC Frequent Use of ICC ESC deterioration by direct exposure to the plasma. ESC deterioration Rough Surface of ESC. Backside He Leak. Non-uniform Wafer Cooling. Aluminum Contamination Issues. There is a significant demand for optimum ICC conditions!! How to evaluate effectiveness of ICC? through a conventional method? or through in-situ plasma monitoring? Semiconductor R&D Center 21

22 Summary SEERS(Self Excited Electron Resonance Spectroscopy) Effective way to monitor process plasma under industrial environments. Electron collision rate from SEERS(universal index of plasma process). Chamber and Process Monitoring through SEERS Identify extremely small changes in chamber conditions. Strong correlation between mean electron collision rate and etched results. (Remain oxide thickness in gate etch : R 2 =0.918, Etched depth in trench etch : R 2 =0.800) Minimization of Chamber Wall Condition Dependence Classify wafer-to-wafer(also lot-to-lot) variations by monitoring electron collision rate. Deploy all devices in several chambers, based on electron collision rate data. Efficiently confirm effects of in-situ chamber cleaning by using SEERS. Semiconductor R&D Center 22

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