Formation of Wear-Resistant TiN and (Ti1-x, Alx)N Coatings Using DC Filtered Vacuum Arc Plasma 1

Size: px
Start display at page:

Download "Formation of Wear-Resistant TiN and (Ti1-x, Alx)N Coatings Using DC Filtered Vacuum Arc Plasma 1"

Transcription

1 Formtion of Wer-Resistnt TiN nd (Ti1-x, Alx)N Cotings Using DC Filtered Vcuum Arc Plsm 1 A.I. Rychikov, N.N. Kovl*, I.B. Stepnov, I.M. Gonchrenko*, D.O. Sivin, I.A. Rychikov, I.A. Shulepov Nucler Physics Institute, 2 Lenin ve., Tomsk, 635, Russi, Phone: (7-3822) , Fx: (7-3822) E-mil: rdug@npi.tpu.ru * Institute of High Current Electronics, 4 Akdemichesky ve., Tomsk 6355, Russi Phone: , Fx: , E-mil: kovl@opee.hcei.tsc.ru Astrct The pper presents the results of investigtion of structure, element composition nd physico-mechnicl properties of TiN nd (TiAl)N cotings deposited under comined tretment of surfce y vcuum rc dischrge nd gseous microprticle-free metl plsm flows. Also, perspectives of industril ppliction of comined technologies re discussed. Gseous plsm flow ws formed using the PINK plsm genertor sed on non-sustinle rc dischrge with glow cthode [5]. The system of rective gs input through gseous rc cthode ws relized in the design of the plsm genertor [6]. 1. Introduction DC vcuum rc dischrge (VAD) plsm hs een used for industril coting deposition for more thn 25 yers. Use of TiN s coting mteril llows decrese friction, wer, increse corrosion resistnce of mterils, protect sustrte from overheting, nd improve decortive properties of rticles [1, 2]. Unfortuntely, use of dc VAD for such modern cotings s (TiAl)N, TiC, CrN, (TiC)N, (TiAl)N, ZrN, MoS 2, DLC, including multilyered ones, is ounded y prmeters of existing technologicl equipment nd methods of coting deposition. Cotings deposited using conventionl technologies re chrcterized y low dhesion strength, high roughness, heterogeneous structure, nd low wer resistnce. The pper presents the results of investigtion of chrcteristics of TiN nd (TiAl)N cotings deposited using industril set-ups for ion nd plsm coting deposition equipped with devices for clening plsm from microprticle frction nd PINK-type gseous plsm genertor. 2. Equipment nd Experimentl Methods The investigtions were crried out using the ННВ6,6- И1 industril set-up for ion nd plsm coting deposition. Fig. 1 shows the schemtic of the experimentl set-up. Metl plsm ws generted y three dc VADsed vcuum rc evportors (VAE). To clen vcuum rc plsm from microprticle frction, the VAEs were equipped with plsm filters (PF) of the shutter type [3, 4]. Fig. 1. Schemtic of the experimentl set-up For the regime of ion nd plsm coting deposition we pplied negtive potentil onto smples. We used voltge source with the device of rc utomtic extinction nd device protecting from overvoltge resulting from rc current rekdown. Pressure in the vcuum chmer ws creted using diffusion oil nd vpour pump Н-25/25СО. The temperture of smples ws controlled y pyrometer Smotrich. Tle 1 shows min technicl chrcteristics of the set-up. Element composition of cotings ws defined y lyered electron Auger spectrometry using the spectrometer Shkhun-2. Smple surfce microstructure nd morphology were investigted y opticl microscopy nd 3D profiling with resolution up to 1 nm using MICRO MEASURE 3D Sttion (STIL). Coting hrdness ws mesured using Nno Hrdness Tester (CSEM) with the Vickers indenter t lodings of 1 mn. In investigte coting dhesion strength we used the scrtch method with the help of Rockwell 1 The work ws supported y wrd of CRDF RR2-994, wrd of the Ministry of Eduction of RF for the Federl Gol Progrm Integrtion No. Л59, nd wrd of Tomsk Region Administrtion. 4

2 Orl Session indenter with the dimeter of µm t time-dependent loding in the rnge of 2 N using Micro Scrtch Tester (CSEM) [7]. Triotechnicl chrcteristics of cotings were investigted using PC-Operted High Temperture Triometer (CSEM). The friction coefficient ws registered in situ. Smple wer ws clculted y mesuring mteril flow resulting from ppliction of fixed ll onto the rotting smple [7]. Tle 1. Prmeters of the experimentl set-up Metl plsm genertor Dischrge current, А 25 Plsm concentrtion, cm 3 up to Plsm flow dimeter, mm Decrese in microprticle frction (Ti) Gseous plsm genertor Working pressure re, P Plsm concentrtion, cm Dischrge current, А 5 15 Homogeneity of plsm flow long the cross section, % Gs N Formtion of TiN nd (TiAl)N Cotings Cotings were deposited onto steel P6M5 smples with the dimeter of 5 mm nd 3 mm thickness, fixed in the center of the rotting tle. Preprtion of smples included surfce mechnicl polishing nd urnishing with rsive pstes АСН /28, 14/1 up to the roughness of R z.7 µm (TiN) nd R z.43 (TilN) nd chemicl clening in ultrsonic th. Smples were clened nd heted in the vcuum chmer using low temperture N 2 plsm t vcuum volume pressure of P with negtive potentil on smples equl to 1.2 kv. Temperture of smples ws in the rnge of 45 5 C. For TiN cotings, smple surfce ws simultneously treted y N 2 nd microprticle-free Ti plsm. Bis voltge on smples incresed up to 1.4 kv. Due to ion chrge stte, surfce ws processed minly y smple heting nd ion etching ccompnied y formtion of lrge mount of ctive sorption centers. The temperture of smples ws 58 С. With smooth decrese in is voltge on smples (U ), we oserved formtion of trnsition lyer nd ion ssisted coting deposition. The temperture ws 45 5 С, nd pressure in the vcuum chmer ws equl to P. (TiAl)N cotings were deposited with the use of two VAEs with Al cthodes nd one VAE with Ti cthode. Cotings were deposited in the rection gs (N 2 ) environment. Rtio of Ti nd Al plsm flows depended on VAD current (I d ). Figure 2 shows the results of investigtion of element composition of TiN nd (TiAl)N cotings. Stochiometric composition of deposited TiN (Ti ~ 45%; N ~ 45%) nd (TiAl)N (Ti ~ 29.5%; Al ~ 27%; N ~ 39%) cotings corresponds to dt on the digrm. Thick trnsition lyers etween the coting nd sustrte show tht the regime of ion ssistnce ws ccompnied y intense diffusion processes ner smple surfce. Concentrtion, % t Concentrtion, % t C Ti Fe N O,,3,6,9 1,2 C Ti Fe Depth, µm N O Al,,2,4,6,8 1, 1,2 1,4 Depth,µm Fig. 2. Element distriution into the depth of the deposited coting: а TiN, (TiAl)N Pper [8] shows the results of diffrction electronmicroscopic phse nlysis of TiN cotings, which show tht when U ws in the rnge of V, multi-phse structures composed of δ-titnium nitride (TiN) with grin size of nm, respectively, were formed. When U ws equl to 1 V, ε-titnium nitride (Ti x N y ) nd δ-titnium nitride phses re oserved in the cotings, however, size of grins of the former phse is hlf size of grins of the TiN phse. Figure 3 shows the results of morphologicl investigtion of the deposited cotings s profiles nd imges of TiN nd (TiAl)N film surfces. The presented dt confirm tht use of PF results in decrese in surfce roughness y severl times. For (TiAl)N cotings formed without PF, surfce roughness equls to tens of microns. The phenomenon is ttriuted to presence of lrge mount of microprticle frction in Al plsm flow (up to severl tens of percents). For this cse droplet size cn e equl to more thn 1 µm. Use of PF for clening Al plsm llows decrese content of microprticle frction in the flow y severl orders of mgnitude, which permits deposit cotings with the roughness not more thn.64 µm. Comprtive nlysis of curves 1 nd 2 (Fig. 2) shows tht decrese in I d nd increse in U llow significntly decrese surfce roughness of TiN cotings. This effect cn e explined y increse in plsm ion component trnsporttion efficiency in PF electrodes

3 nd decrese in microprticle frction in the rc plsm flow t the expense of decrese in I d, s well s due to reflection of droplets from negtive potentil ner the smple surfce [9] nd sputtering of microedges on coting surfce. show tht the mesured hrdness corresponds to optiml stochiometric composition of the coting. = 1 A = 9 A = 8 A Smples = 7 A TiN with PF TiN without PF 1 3 Hrdness, kg/mm 2 c Fig. 4. Chnge in hrdness vlues depending on regimes of coting deposition The dt presented t Fig. 4 confirm tht use of PF llows increse TiN coting hrdness y %. It ws lso found out tht increse in U in the rnge of 1 75 V results in decrese in coting hrdness y 15 %. The phenomenon cn e explined y the fct tht in cse of ppliction of gseous plsm genertor, the rtio of metl nd nitrogen toms required for formtion of the coting with optiml stochiometric composition is ensured t decresed pressure of N 2 ; with increse in U we oserve metl growth in the coting, which negtively influences coting hrdness. At the sme time increse in U results in insignificnt decrese in inner tensions in smples, which we demonstrted y compring loding nd unloding curves of the Nno Hrdness Tester indenter (Fig. 5). The phenomenon cn lso e explined y chnge in conditions of phse formtion, in prticulr, y formtion of structures with grins of lrger sizes with the increse in U contrry to conventionl notion on increse in compressing voltges with increse in intensity of heting [8]. Norml force, mn 1 1- TiN - without PF TiN - with PF 6 3- (TiAl)N - with PF Penetrtion depth, µm d Fig. 3. Profile of TiN nd TiAlN coting surfces: without PF, with PF (I d = 125 A, U = 5 V), c with PF (I d = 1 A, U = 8 V), d (TiAl)N Figure 4 presents the results of investigtion of (TiAl)N coting hrdness depending on rtio of Ti nd Al plsm flow concentrtion. According to the dt, coting with the hrdness HV = 367 kg/mm 2 ws otined t I d = 8 A. Dt of the element nlysis 6 Fig. 5. Curves of indenter loding nd unloding Figure 6 shows the results of investigtion of dhesion strength of the deposited cotings in the form of coustic emission signl depending on loding nd indenter penetrtion depth. The presented dt confirm tht delmintion of the TiN coting deposited y conventionl technology egins t loding equl to.81 N. Surfce imge ner the indenter trck (Fig. 6а) shows tht the structure is porous, which revels high inner tensions in the mteril.

4 Orl Session Signl level, % Signl level, % Signl level, % c Fig. 6. Chnge in coustic emission signl depending on penetrtion depth nd indenter loding, nd coting surfce imge ner the indenter trck: TiN without PF, TiN with PF, c (TiAl)N 7 When we use comined method of TiN coting deposition, criticl loding, t which coting delmintion egins, increses up to 1.17 N, which confirms increse in coting dhesion strength y 7%. For this cse we used high intensity comined ion clening, surfce heting nd ctivtion, formtion of thick trnsition lyer etween the sustrte nd coting, nd ion ssisted coting deposition. A complex of these fctors llowed form (TiAl)N coting from dc VAD plsm; coting delmintion ws oserved t criticl loding of 1.13 N. For this cse, crcking lines chrcteristic of mterils with high level of tension re sent ner the indenter trck (Fig. 6,с). In ws experimentlly found out tht with the increse in U in the rnge of 1 75 V we oserved increse in dhesion strength of TiN cotings y %. The highest vlues of dhesion strength were registered in the rnge of 1 25 V. The effect cn e ttriuted to decrese in compressing residul tensions resulting from increse in temperture, rdition tretment of the surfce, increse in formed phse sizes, etc. Figure 7 shows the results of investigtion of friction coefficient of TiN nd (TiAl)N cotings. The dt confirm tht if we deposit TiN coting onto steel P6M5, surfce friction coefficient decreses y 2.5 times with nd without PF. At the first stge of testing we oserved shrp increse in friction coefficient, which cn e explined y ruing of smples ecuse of surfce roughness the sme ws noticed for TiN cotings deposited with PF (curve 3). Due to low roughness, the effect of smple ruing is sent t the initil stge, nd more dense nd homogeneous coting structure cuses dditionl decrese in friction coefficient y %. Friction coefficient,8,7,6,5,4,3 TiN with PF TiN without PF TiAlN with PF, Lps, x1 3 Fig. 7. Chnge in friction coefficient depending on numer of rottions Figure 8 shows influence of surfce morphology onto wer resistnce of deposited cotings V 75 V 5 V 1 V (TiAl)N TiN with removl of wer wste TiN without removl of wer wste Without PF,,2,4,6,8 1, Wer resistnce Fig. 8. Wer resistnce of TiN nd (TiAl)N cotings depending on deposition regimes The digrm is normlized y unit with respect to wer intensity of steel P6M5 initil smple. The presented dt show tht TiN cotings deposited using the conventionl technology re chrcterized y doule increse in wer resistnce. At the sme time, use of PF llows dditionlly increse steel wer resistnce y 5 times. The dt otined on wer intensity

5 without removl of wer wste show tht presence of wer wste in the indenter trck, lter used s n rsive, result in shrp increse in wer intensity. However, for this cse wer-resistnce decreses 4 times compred to initil stte. Moreover, we didn t notice ny dependence of coting wer resistnce on smple is potentil. 4. Technologicl Applictions of the Method nd Its Future Perspectives The presented comined regime of surfce tretment with dc VAD gseous nd microprticle-free metl plsm under formtion of surfce negtive potentil llows effectively clen nd ctivte the surfce, including use of metl plsm, form diffusion trnsition lyers etween the sustrte nd coting, plsticize coting mterils, deposit homogeneous TiN nd (TiAl)N cotings with good exploittion properties. Experiments on comined use of the PINK plsm genertor nd VAE reveled tht t the expense of effective ioniztion of the rective gs one cn decrese chmer pressure for deposition of composite cotings, increse coting deposition rte nd increse coting dhesion strength t lower condenstion tempertures compred to tempertures for the conventionl method of coting deposition. Prcticl ppliction of the ove-mentioned regimes of ion nd plsm mteril tretment ws crried out t prominent RF tools plnt Tomsky Instrument. For this cse TiN nd (TiAl)N cotings were deposited onto metl-cutting tools. Upgrde of technologicl equipment for ion nd plsm coting deposition with gseous plsm genertors of PINK-type nd PFs llowed improve qulity of produced rticles, expnd nomenclture in the field of ppliction of produced items, stimulte development nd introduction of new types of cotings. E.g., production of rticles deposited with (TiAl)N cotings llowed oth increse wer resistnt chrcteristics nd offered perspectives of coting ppliction for luminium lloy rticles; het resistnt properties of (TiAl)N cotings permitted void tool cooling with liquids nd significntly increse processing velocity. Comined ppliction of the PINK genertor nd PF llows generte high-qulity cotings using dc VAD plsm on rticles with the operting surfce re equl to the size of microprticle frction.1 1 mm. Perspectives of ppliction of dc VAD plsm for deposition of Al 2 O 3, TiC, DLC, etc. cotings, which otherwise cnnot e deposited using conventionl VAE since the size of microprticle frction for them is more thn 1 µ, re reveled. References [1] V.А. Brvinok, Control of stress stte nd chrcteristics of plsm cotings, Moscow, Mchine uilding, 199, p [2] H.G. Prengel, A.T. Snthnm, R.M. Penich, P.S. Jindl, K.H. Wendt, Surf. Cot. Technol (1997). [3] A.I. Rychikov, I.B. Stepnov, Ptent RU C1, [4] A.I. Rychikov, I.B. Stepnov, Rev. Sci. Instrum. 69, 893 (1998). [5] D.P. Borisov, N.N. Kovl, P.M. Shnin, Izv. Vuzov. Physics, 37, iss. 3, 115 (1994). [6] I.M. Gonchrenko, S.V. Grigoriev, I.V. Loptin, N.N. Kovl, P.M. Schnin, A.A. Tukhftullin, Yu.F. Ivnov, N.V. Strumilov, Surfce nd Cotings Technology , 419 (3). [7] I.B. Stepnov, S.V. Dektyrev, A.I. Rychikov, I.A. Rychikov, D.O. Sivin, I.A. Shulepov, in: Proc. 6 th Int. Conf. on Modifiction of Mterils with Prticle Bems nd Plsm Flows, 2, pp [8] S.V. Fortun, Yu.P. Shrkeev, I.A. Shulepov, I.B. Stepnov, in: Proc. 6 th Int. Conf. on Modifiction of Mterils with Prticle Bems nd Plsm Flows, 2, pp [9] P.M. Shnin, N.N. Kovl, A.V. Kozyrev, I.M. Gonchrenko, J. Lngner, nd S.V. Grigoriev, in: Proc. 5 th Int. Conf. on Modifiction of Mterils with Prticle Bems nd Plsm Flows,, pp

Thermal Stability of Ti-C-Ni-Cr and Ti-C-Ni-Cr-Al-Si Nanocomposite Coatings

Thermal Stability of Ti-C-Ni-Cr and Ti-C-Ni-Cr-Al-Si Nanocomposite Coatings Journl of Physics: Conference Series PAPER OPEN ACCESS Therml Stility of Ti-C-Ni-Cr nd Ti-C-Ni-Cr-Al-Si Nnocomposite Cotings To cite this rticle: A V Andreev et l 2015 J. Phys.: Conf. Ser. 652 012057 View

More information

AN IMPROVED SMALL CLOSED DRIFT THRUSTER WITH BOTH CONDUCTING AND DIELECT RIC CHANNELS

AN IMPROVED SMALL CLOSED DRIFT THRUSTER WITH BOTH CONDUCTING AND DIELECT RIC CHANNELS AN IMPROVED SMALL CLOSED DRIFT THRUSTER WITH BOTH CONDUCTING AND DIELECT RIC CHANNELS A.I.Bugrov, A.D.Desitskov, H.R.Kufmn, V.K.Khrchevnikov, A.I.Morozov c, V.V.Zhurin d Moscow Institute of Rdioelectronics,

More information

Measuring Electron Work Function in Metal

Measuring Electron Work Function in Metal n experiment of the Electron topic Mesuring Electron Work Function in Metl Instructor: 梁生 Office: 7-318 Emil: shling@bjtu.edu.cn Purposes 1. To understnd the concept of electron work function in metl nd

More information

Supplementary Figure 1 Supplementary Figure 2

Supplementary Figure 1 Supplementary Figure 2 Supplementry Figure 1 Comprtive illustrtion of the steps required to decorte n oxide support AO with ctlyst prticles M through chemicl infiltrtion or in situ redox exsolution. () chemicl infiltrtion usully

More information

Fully Kinetic Simulations of Ion Beam Neutralization

Fully Kinetic Simulations of Ion Beam Neutralization Fully Kinetic Simultions of Ion Bem Neutrliztion Joseph Wng University of Southern Cliforni Hideyuki Usui Kyoto University E-mil: josephjw@usc.edu; usui@rish.kyoto-u.c.jp 1. Introduction Ion em emission/neutrliztion

More information

G. MATEESCU 1 A. MATEESCU 1 C. SAMOILĂ 2 D. URSUŢIU 2

G. MATEESCU 1 A. MATEESCU 1 C. SAMOILĂ 2 D. URSUŢIU 2 PRELIMINARY EXPERIMENTS OF THE NEW FACILITY AND TECHNOLOGY FOR VACUUM DRYING AND THERMAL POLIMERIZATION OF THE TURBOGENERATORS STATOR BARS INSULATION (INTEPOL) G. MATEESCU 1 A. MATEESCU 1 C. SAMOILĂ 2

More information

Flexible Beam. Objectives

Flexible Beam. Objectives Flexile Bem Ojectives The ojective of this l is to lern out the chllenges posed y resonnces in feedck systems. An intuitive understnding will e gined through the mnul control of flexile em resemling lrge

More information

Some parameters of varicaps with gradient base area based on Shottky barrier

Some parameters of varicaps with gradient base area based on Shottky barrier ISSN: 35-38 Vol. 4, Issue, December 7 Some prmeters of vricps with grdient bse re bsed on Shottky brrier Mmtkrimov O.O., KuchkrovB.Kh. Rector, Nmngn engineering-technology institute, Kosonsoy str.,7, Nmngn,

More information

Temperature influence compensation in microbolometer detector for image quality enhancement

Temperature influence compensation in microbolometer detector for image quality enhancement .26/qirt.26.68 Temperture influence compenstion in microolometer detector for imge qulity enhncement More info out this rticle: http://www.ndt.net/?id=2647 Astrct y M. Krupiński*, T. Sosnowski*, H. Mdur*

More information

AMPERE CONGRESS AMPERE on Magnetic Resonance and Related Phenomena. Under the auspices of The GROUPEMENT AMPERE

AMPERE CONGRESS AMPERE on Magnetic Resonance and Related Phenomena. Under the auspices of The GROUPEMENT AMPERE AMPERE 2000 th 30 CONGRESS AMPERE on Mgnetic Resonnce nd Relted Phenomen Lison, Portugl, 23-2 July 2000 Under the uspices of The GROUPEMENT AMPERE Edited y: A.F. MARTINS, A.G. FEIO nd J.G. MOURA Sponsoring

More information

ANALYSIS OF FAST REACTORS SYSTEMS

ANALYSIS OF FAST REACTORS SYSTEMS ANALYSIS OF FAST REACTORS SYSTEMS M. Rghe 4/7/006 INTRODUCTION Fst rectors differ from therml rectors in severl spects nd require specil tretment. The prsitic cpture cross sections in the fuel, coolnt

More information

A study of fluid flow simulation in convergentdivergent

A study of fluid flow simulation in convergentdivergent IOP Conference Series: Mterils Science nd Engineering PAPER OPEN ACCESS A study of fluid flow simultion in convergentdivergent nozzles To cite this rticle: I Olru 2015 IOP Conf. Ser.: Mter. Sci. Eng. 95

More information

Psychrometric Applications

Psychrometric Applications Psychrometric Applictions The reminder of this presenttion centers on systems involving moist ir. A condensed wter phse my lso be present in such systems. The term moist irrefers to mixture of dry ir nd

More information

CHEMICAL KINETICS

CHEMICAL KINETICS CHEMICAL KINETICS Long Answer Questions: 1. Explin the following terms with suitble exmples ) Averge rte of Rection b) Slow nd Fst Rections c) Order of Rection d) Moleculrity of Rection e) Activtion Energy

More information

Rel Gses 1. Gses (N, CO ) which don t obey gs lws or gs eqution P=RT t ll pressure nd tempertures re clled rel gses.. Rel gses obey gs lws t extremely low pressure nd high temperture. Rel gses devited

More information

Estimation of the particle concentration in hydraulic liquid by the in-line automatic particle counter based on the CMOS image sensor

Estimation of the particle concentration in hydraulic liquid by the in-line automatic particle counter based on the CMOS image sensor Glyndŵr University Reserch Online Conference Presenttion Estimtion of the prticle concentrtion in hydrulic liquid by the in-line utomtic prticle counter bsed on the CMOS imge sensor Kornilin, D.V., Kudryvtsev,

More information

ELE B7 Power Systems Engineering. Power System Components Modeling

ELE B7 Power Systems Engineering. Power System Components Modeling Power Systems Engineering Power System Components Modeling Section III : Trnsformer Model Power Trnsformers- CONSTRUCTION Primry windings, connected to the lternting voltge source; Secondry windings, connected

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION DOI: 1.138/NMAT3984 Supplementry Informtion for Improved performnce nd stility in quntum dot solr cells through nd lignment engineering Chi- Ho M. Chung 1, Ptrick R. Brown 2, Vldimir Bulović 3 & Moungi

More information

AQA Chemistry Paper 2

AQA Chemistry Paper 2 AQA hemistry Pper 2 1.1 A student is plnning n investigtion into how the concentrtion of hydrochloric cid ffects the rte of the rection with mrle chips. Wht is the independent vrile? Tick one ox. (1 mrk)

More information

Motion of Electrons in Electric and Magnetic Fields & Measurement of the Charge to Mass Ratio of Electrons

Motion of Electrons in Electric and Magnetic Fields & Measurement of the Charge to Mass Ratio of Electrons n eperiment of the Electron topic Motion of Electrons in Electric nd Mgnetic Fields & Mesurement of the Chrge to Mss Rtio of Electrons Instructor: 梁生 Office: 7-318 Emil: shling@bjtu.edu.cn Purposes 1.

More information

Bend Forms of Circular Saws and Evaluation of their Mechanical Properties

Bend Forms of Circular Saws and Evaluation of their Mechanical Properties ISSN 139 13 MATERIALS SCIENCE (MEDŽIAGOTYRA). Vol. 11, No. 1. 5 Bend Forms of Circulr s nd Evlution of their Mechnicl Properties Kristin UKVALBERGIENĖ, Jons VOBOLIS Deprtment of Mechnicl Wood Technology,

More information

Section 20.1 Electric Charge and Static Electricity (pages )

Section 20.1 Electric Charge and Static Electricity (pages ) Nme Clss Dte Section 20.1 Electric Chrge nd Sttic (pges 600 603) This section explins how electric chrge is creted nd how positive nd negtive chrges ffect ech other. It lso discusses the different wys

More information

Intro to Nuclear and Particle Physics (5110)

Intro to Nuclear and Particle Physics (5110) Intro to Nucler nd Prticle Physics (5110) Feb, 009 The Nucler Mss Spectrum The Liquid Drop Model //009 1 E(MeV) n n(n-1)/ E/[ n(n-1)/] (MeV/pir) 1 C 16 O 0 Ne 4 Mg 7.7 14.44 19.17 8.48 4 5 6 6 10 15.4.41

More information

Effects of peripheral drilling moment on delamination using special drill bits

Effects of peripheral drilling moment on delamination using special drill bits journl of mterils processing technology 01 (008 471 476 journl homepge: www.elsevier.com/locte/jmtprotec Effects of peripherl illing moment on delmintion using specil ill bits C.C. Tso,, H. Hocheng b Deprtment

More information

Influence of oxygen on the morphological and structural properties of Ti thin films grown by ion beam-assisted deposition

Influence of oxygen on the morphological and structural properties of Ti thin films grown by ion beam-assisted deposition Ž. Thin Solid Films 384 2001 Influence of oxygen on the morphologicl nd structurl properties of Ti thin films grown by ion bem-ssisted deposition J.M. Lopez b, F.J. Gordillo-Vzquez, M. Fernndez, J.M. Albell,

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION Synthesis of metl oxide with roomtemperture photoreversile phse trnsition Shin-ichi Ohkoshi 1 *, Yoshihide Tsunouchi, 1 Tomoyuki Mtsud, 1 Kzuhito Hshimoto, 2 Asuk Nmi, 1 Fumiyoshi

More information

STRUCTURAL AND MAGNETIC PROPERTIES OF Fe/Si x Fe 1! x MULTILAYERS

STRUCTURAL AND MAGNETIC PROPERTIES OF Fe/Si x Fe 1! x MULTILAYERS MOLECULAR PHYSICS REPORTS 0 (00) 8-86 STRUCTURAL AND MAGNETIC PROPERTIES OF Fe/ x Fe! x MULTILAYERS P. WANDZIUK, M. KOPCEWICZ, B. SZYMAŃSKI, AND T. LUCIŃSKI Institute of Moleculr Physics, Polish Acdemy

More information

6. Photoionization of acridine through singlet and triplet channels

6. Photoionization of acridine through singlet and triplet channels Chpter 6: Photoioniztion of cridine through singlet nd triplet chnnels 59 6. Photoioniztion of cridine through singlet nd triplet chnnels Photoioinztion of cridine (Ac) in queous micelles hs not yet een

More information

Genetic Programming. Outline. Evolutionary Strategies. Evolutionary strategies Genetic programming Summary

Genetic Programming. Outline. Evolutionary Strategies. Evolutionary strategies Genetic programming Summary Outline Genetic Progrmming Evolutionry strtegies Genetic progrmming Summry Bsed on the mteril provided y Professor Michel Negnevitsky Evolutionry Strtegies An pproch simulting nturl evolution ws proposed

More information

arxiv:hep-ex/ v1 12 Sep 1998

arxiv:hep-ex/ v1 12 Sep 1998 Evidence of the φ ηπ γ decy rxiv:hep-ex/9891v1 12 Sep 1998 Astrct M.N.Achsov, V.M.Aulchenko, S.E.Bru, A.V.Berdyugin, A.V.Bozhenok, A.D.Bukin, D.A.Bukin, S.V.Burdin, T.V.Dimov, S.I.Dolinski, V.P.Druzhinin,

More information

Rates of chemical reactions

Rates of chemical reactions Rtes of chemicl rections Mesuring rtes of chemicl rections Experimentl mesuring progress of the rection Monitoring pressure in the rection involving gses 2 NO( g) 4 NO ( g) + O ( g) 2 5 2 2 n(1 α) 2αn

More information

I1 = I2 I1 = I2 + I3 I1 + I2 = I3 + I4 I 3

I1 = I2 I1 = I2 + I3 I1 + I2 = I3 + I4 I 3 2 The Prllel Circuit Electric Circuits: Figure 2- elow show ttery nd multiple resistors rrnged in prllel. Ech resistor receives portion of the current from the ttery sed on its resistnce. The split is

More information

XX-th ARS SEPARATORIA Szklarska Poręba, Poland 2005

XX-th ARS SEPARATORIA Szklarska Poręba, Poland 2005 XX-th ARS SEPARATORIA Szklrsk Porę, Polnd 25 DIALYSIS OF METAL IONS THROUGH ULTRAFILTRATION POLYSULFONE MEMBRANES ENHANCED BY POLY(ACRYLIC ACID) Gryzeld POŹNIAK Wroclw University of Technology, Deprtment

More information

Fig. 1. Open-Loop and Closed-Loop Systems with Plant Variations

Fig. 1. Open-Loop and Closed-Loop Systems with Plant Variations ME 3600 Control ystems Chrcteristics of Open-Loop nd Closed-Loop ystems Importnt Control ystem Chrcteristics o ensitivity of system response to prmetric vritions cn be reduced o rnsient nd stedy-stte responses

More information

Lecture 6: Diffusion and Reaction kinetics

Lecture 6: Diffusion and Reaction kinetics Lecture 6: Diffusion nd Rection kinetics 1-1-1 Lecture pln: diffusion thermodynmic forces evolution of concentrtion distribution rection rtes nd methods to determine them rection mechnism in terms of the

More information

Hints for Exercise 1 on: Current and Resistance

Hints for Exercise 1 on: Current and Resistance Hints for Exercise 1 on: Current nd Resistnce Review the concepts of: electric current, conventionl current flow direction, current density, crrier drift velocity, crrier numer density, Ohm s lw, electric

More information

- 5 - TEST 2. This test is on the final sections of this session's syllabus and. should be attempted by all students.

- 5 - TEST 2. This test is on the final sections of this session's syllabus and. should be attempted by all students. - 5 - TEST 2 This test is on the finl sections of this session's syllbus nd should be ttempted by ll students. Anything written here will not be mrked. - 6 - QUESTION 1 [Mrks 22] A thin non-conducting

More information

Impact of the tribological characteristics on the dynamics of the ultrasonic piezoelectric motor

Impact of the tribological characteristics on the dynamics of the ultrasonic piezoelectric motor 51 ISSN 1392 1207. MECHANIKA. 2015 Volume 21(1): 51 55 Impct of the triologicl chrcteristics on the dynmics of the ultrsonic piezoelectric motor J. Pdgursks*, R. Rukuiž**, R. Bnsevičius***, V. Jūrėns****,

More information

Colorimetric detection and separation of chiral tyrosine. based on N-acetyl-L-cysteine modified gold. nanoparticles

Colorimetric detection and separation of chiral tyrosine. based on N-acetyl-L-cysteine modified gold. nanoparticles Colorimetric detection nd seprtion of chirl tyrosine sed on N-cetyl-L-cysteine modified gold nnoprticles Hiyn Su, Qiuling Zheng nd Hiing Li* Key Lortory of Pesticide nd Chemicl Biology (CCNU), Ministry

More information

Numerical Study Of Coated Electrical Contacts

Numerical Study Of Coated Electrical Contacts Excerpt from the Proceedings of the COMSOL Conference 21 Pris Numericl Study Of Coted Electricl Contcts Per Lindholm Mchine Design KTH Brinellvägen 83 SE-144 Stockholm per@md.kth.se Abstrct: Electricl

More information

NUMERICAL SIMULATION OF FRONTAL MIXED CLOUD SYSTEMS AND CLOUD MICROSTRUCTURE EFFECT ON SATELLITE SIGNAL

NUMERICAL SIMULATION OF FRONTAL MIXED CLOUD SYSTEMS AND CLOUD MICROSTRUCTURE EFFECT ON SATELLITE SIGNAL NUMERICAL SIMULATION OF FRONTAL MIXED CLOUD SYSTEMS AND CLOUD MICROSTRUCTURE EFFECT ON SATELLITE SIGNAL V. Bkhnov, O. Kryvook, B. Dormn Ukrinin Hydrometeorologicl Reserch Institute, Avenue of Science 37,

More information

Plasma Internal Inductance in Presence of Toroidal Field Ripple of Tokamak

Plasma Internal Inductance in Presence of Toroidal Field Ripple of Tokamak Journl of Nucler nd Prticle Physics 13, 3(4): 11-15 O: 1.593/j.jn.1334.9 Plsm nternl nductnce in Presence of Toroidl Field Rile of Tokmk A. Slr Elhi *, M. Ghornneviss Plsm Physics Reserch Center, Science

More information

CS12N: The Coming Revolution in Computer Architecture Laboratory 2 Preparation

CS12N: The Coming Revolution in Computer Architecture Laboratory 2 Preparation CS2N: The Coming Revolution in Computer Architecture Lortory 2 Preprtion Ojectives:. Understnd the principle of sttic CMOS gte circuits 2. Build simple logic gtes from MOS trnsistors 3. Evlute these gtes

More information

Lesson 8. Thermomechanical Measurements for Energy Systems (MENR) Measurements for Mechanical Systems and Production (MMER)

Lesson 8. Thermomechanical Measurements for Energy Systems (MENR) Measurements for Mechanical Systems and Production (MMER) Lesson 8 Thermomechnicl Mesurements for Energy Systems (MEN) Mesurements for Mechnicl Systems nd Production (MME) A.Y. 205-6 Zccri (ino ) Del Prete Mesurement of Mechnicl STAIN Strin mesurements re perhps

More information

The Influence of Interface and Semiconductor Bulk Traps Generated Under HEFS on MOSFET`s Electrical Characteristics

The Influence of Interface and Semiconductor Bulk Traps Generated Under HEFS on MOSFET`s Electrical Characteristics Proceedings of the 5th Smll Systems Simultion Symposium 2014, Niš, Seri, 12th-14th Ferury 2014 The Influence of Interfce nd Semiconductor Bulk Trps Generted Under HEFS on MOSFET`s Electricl Chrcteristics

More information

The International Association for the Properties of Water and Steam. Release on the Ionization Constant of H 2 O

The International Association for the Properties of Water and Steam. Release on the Ionization Constant of H 2 O IAPWS R-7 The Interntionl Assocition for the Properties of Wter nd Stem Lucerne, Sitzerlnd August 7 Relese on the Ioniztion Constnt of H O 7 The Interntionl Assocition for the Properties of Wter nd Stem

More information

Influence of deformation on metal structure in the forward microextrusion process

Influence of deformation on metal structure in the forward microextrusion process 329 ISSN 1392 1207. MECHANIKA. 2015 Volume 21(4): 329 333 Influence of deformtion on metl structure in the forwrd microextrusion process K. Mogielnicki*, J. Piwnik** *Fculty of Mechnicl Engineering, Bilystok

More information

Ch. 24 Molecular Reaction Dynamics 1. Collision Theory 2. Diffusion-Controlled Reaction

Ch. 24 Molecular Reaction Dynamics 1. Collision Theory 2. Diffusion-Controlled Reaction Ch. 4 Moleculr Rection Dynmics 1. Collision Theory. Diffusion-Controlle Rection Lecture 17 3. The Mteril Blnce Eqution 4. Trnsition Stte Theory: The Eyring Eqution 5. Trnsition Stte Theory: Thermoynmic

More information

Physics 1402: Lecture 7 Today s Agenda

Physics 1402: Lecture 7 Today s Agenda 1 Physics 1402: Lecture 7 Tody s gend nnouncements: Lectures posted on: www.phys.uconn.edu/~rcote/ HW ssignments, solutions etc. Homework #2: On Msterphysics tody: due Fridy Go to msteringphysics.com Ls:

More information

SUPPLEMENTARY INFORMATION

SUPPLEMENTARY INFORMATION SUPPLEMENTARY INFORMATION doi: 1.138/nnno.29.451 Aove-ndgp voltges from ferroelectric photovoltic devices S. Y. Yng, 1 J. Seidel 2,3, S. J. Byrnes, 2,3 P. Shfer, 1 C.-H. Yng, 3 M. D. Rossell, 4 P. Yu,

More information

Designing Information Devices and Systems I Spring 2018 Homework 7

Designing Information Devices and Systems I Spring 2018 Homework 7 EECS 16A Designing Informtion Devices nd Systems I Spring 2018 omework 7 This homework is due Mrch 12, 2018, t 23:59. Self-grdes re due Mrch 15, 2018, t 23:59. Sumission Formt Your homework sumission should

More information

Laser polishing of vidicon s glass substrates

Laser polishing of vidicon s glass substrates Lser polishing of vidicon s glss substrtes Sidorenko S.P., Fedosovsky M.E., Veiko V.P. 3, Golubok A.O. 3, Levichev V.V. 3, Chuiko V.A. 3, Ykovlev E.B. 3, Shkhno E.A. 3 Joint stock compny «Dikont», joint

More information

DETERMINATION OF MECHANICAL PROPERTIES OF NANOSTRUCTURES WITH COMPLEX CRYSTAL LATTICE USING MOMENT INTERACTION AT MICROSCALE

DETERMINATION OF MECHANICAL PROPERTIES OF NANOSTRUCTURES WITH COMPLEX CRYSTAL LATTICE USING MOMENT INTERACTION AT MICROSCALE Determintion RevAdvMterSci of mechnicl 0(009) -7 properties of nnostructures with complex crystl lttice using DETERMINATION OF MECHANICAL PROPERTIES OF NANOSTRUCTURES WITH COMPLEX CRYSTAL LATTICE USING

More information

Electronic Supplementary Information

Electronic Supplementary Information Electronic Supplementry Informtion Assemling cron-coted hollow α-fe 2 nnohorns on the CNT ckone for superior lithium storge cpility Corresponding uthor: Xiong Wen (Dvid) Lou* School of Chemicl nd Biomedicl

More information

polyimide Spray-coated ZrP/epoxy film Spray-coated ZrP/epoxy film glass

polyimide Spray-coated ZrP/epoxy film Spray-coated ZrP/epoxy film glass c d e polyimide Spry-coted ZrP/epoxy film glss Spry-coted ZrP/epoxy film f g Supplementry Figure 1. Opticl microscopy of smectic ( = 0.044) α-zrp/epoxy films., Trnsmission opticl microscopy (TOM) of smectic

More information

Minimum Energy State of Plasmas with an Internal Transport Barrier

Minimum Energy State of Plasmas with an Internal Transport Barrier Minimum Energy Stte of Plsms with n Internl Trnsport Brrier T. Tmno ), I. Ktnum ), Y. Skmoto ) ) Formerly, Plsm Reserch Center, University of Tsukub, Tsukub, Ibrki, Jpn ) Plsm Reserch Center, University

More information

Name Class Date. Match each phrase with the correct term or terms. Terms may be used more than once.

Name Class Date. Match each phrase with the correct term or terms. Terms may be used more than once. Exercises 341 Flow of Chrge (pge 681) potentil difference 1 Chrge flows when there is between the ends of conductor 2 Explin wht would hppen if Vn de Grff genertor chrged to high potentil ws connected

More information

Applications of Bernoulli s theorem. Lecture - 7

Applications of Bernoulli s theorem. Lecture - 7 Applictions of Bernoulli s theorem Lecture - 7 Prcticl Applictions of Bernoulli s Theorem The Bernoulli eqution cn be pplied to gret mny situtions not just the pipe flow we hve been considering up to now.

More information

The Predom module. Predom calculates and plots isothermal 1-, 2- and 3-metal predominance area diagrams. Predom accesses only compound databases.

The Predom module. Predom calculates and plots isothermal 1-, 2- and 3-metal predominance area diagrams. Predom accesses only compound databases. Section 1 Section 2 The module clcultes nd plots isotherml 1-, 2- nd 3-metl predominnce re digrms. ccesses only compound dtbses. Tble of Contents Tble of Contents Opening the module Section 3 Stoichiometric

More information

A Study of High Specific Impulse Ion Thruster Optics

A Study of High Specific Impulse Ion Thruster Optics A Study of High Specific Impulse Ion Thruster Optics Pul J. Wilur, Joshu Miller, Cody Frnell Deprtment of Mechnicl Engineering Colordo Stte University Fort Collins, CO 8053 970-491-8564 pwilur@engr.colostte.edu

More information

Available online at ScienceDirect. Procedia Engineering 172 (2017 )

Available online at  ScienceDirect. Procedia Engineering 172 (2017 ) Aville online t www.sciencedirect.com ScienceDirect Procedi Engineering 172 (2017 ) 218 225 Modern Building Mterils, Structures nd Techniques, MBMST 2016 Experimentl nd Numericl Anlysis of Direct Sher

More information

DYNAMIC HARDNESS DURING DIFFERENT PHASES OF INDENTATION. Vytautas Vasauskas Kaunas University of Technology, Lithuania.

DYNAMIC HARDNESS DURING DIFFERENT PHASES OF INDENTATION. Vytautas Vasauskas Kaunas University of Technology, Lithuania. DYNAMIC HARDNESS DURING DIFFERENT PHASES OF INDENTATION ytuts susks Kuns University of Technology, Lithuni. Abstrct. The pper reports on the underlying concept for securing the mesuring bsis used in the

More information

High speed machines using advanced magnetic materials analyzed by appropriate finite element models

High speed machines using advanced magnetic materials analyzed by appropriate finite element models High speed mchines using dvnced mgnetic mterils nlyzed y pproprite finite element models G. D. KALOKIRIS, A. G. KLADAS Lortory of Electricl Mchines nd Power Electronics, Electric Power Division Fculty

More information

DIRECT CURRENT CIRCUITS

DIRECT CURRENT CIRCUITS DRECT CURRENT CUTS ELECTRC POWER Consider the circuit shown in the Figure where bttery is connected to resistor R. A positive chrge dq will gin potentil energy s it moves from point to point b through

More information

Emission of K -, L - and M - Auger Electrons from Cu Atoms. Abstract

Emission of K -, L - and M - Auger Electrons from Cu Atoms. Abstract Emission of K -, L - nd M - uger Electrons from Cu toms Mohmed ssd bdel-rouf Physics Deprtment, Science College, UEU, l in 17551, United rb Emirtes ssd@ueu.c.e bstrct The emission of uger electrons from

More information

Direct indirect character of the band gap in methylammonium lead iodide perovskite

Direct indirect character of the band gap in methylammonium lead iodide perovskite Direct indirect chrcter of the nd gp in methylmmonium led iodide perovskite Eline M. Hutter 1, Mrí C. Gélvez-Rued 1, Ann Osherov 2, Vldimir Bulović 2, Ferdinnd C. Grozem 1, Smuel D. Strnks 2,3*, nd Tom

More information

+ x 2 dω 2 = c 2 dt 2 +a(t) [ 2 dr 2 + S 1 κx 2 /R0

+ x 2 dω 2 = c 2 dt 2 +a(t) [ 2 dr 2 + S 1 κx 2 /R0 Notes for Cosmology course, fll 2005 Cosmic Dynmics Prelude [ ds 2 = c 2 dt 2 +(t) 2 dx 2 ] + x 2 dω 2 = c 2 dt 2 +(t) [ 2 dr 2 + S 1 κx 2 /R0 2 κ (r) 2 dω 2] nd x = S κ (r) = r, R 0 sin(r/r 0 ), R 0 sinh(r/r

More information

AES and XPS characterization of TiN layers formed and modified by ion implantation

AES and XPS characterization of TiN layers formed and modified by ion implantation Semiconductor Physics, Quntum Electronics & ptoelectronics. 1999. V. 2, N 3. P. 81-85. PACS: 85.4.L; 61.72.T; 68.55.L AES nd XPS chrcteriztion of TiN lyers formed nd modified y ion implnttion V. Melnik,

More information

Designing Information Devices and Systems I Spring 2018 Homework 8

Designing Information Devices and Systems I Spring 2018 Homework 8 EECS 16A Designing Informtion Devices nd Systems I Spring 2018 Homework 8 This homework is due Mrch 19, 2018, t 23:59. Self-grdes re due Mrch 22, 2018, t 23:59. Sumission Formt Your homework sumission

More information

dy ky, dt where proportionality constant k may be positive or negative

dy ky, dt where proportionality constant k may be positive or negative Section 1.2 Autonomous DEs of the form 0 The DE y is mthemticl model for wide vriety of pplictions. Some of the pplictions re descried y sying the rte of chnge of y(t) is proportionl to the mount present.

More information

First Law of Thermodynamics. Control Mass (Closed System) Conservation of Mass. Conservation of Energy

First Law of Thermodynamics. Control Mass (Closed System) Conservation of Mass. Conservation of Energy First w of hermodynmics Reding Problems 3-3-7 3-0, 3-5, 3-05 5-5- 5-8, 5-5, 5-9, 5-37, 5-0, 5-, 5-63, 5-7, 5-8, 5-09 6-6-5 6-, 6-5, 6-60, 6-80, 6-9, 6-, 6-68, 6-73 Control Mss (Closed System) In this section

More information

Supporting Online Material for

Supporting Online Material for Correction: 1 December 007 www.sciencemg.org/cgi/content/full/318/5857/1750/dc1 Supporting Online Mteril for Mott Trnsition in VO Reveled by Infrred Spectroscopy nd Nno- Imging M. M. Qzilbsh,* M. Brehm,

More information

Thomas Whitham Sixth Form

Thomas Whitham Sixth Form Thoms Whithm Sith Form Pure Mthemtics Unit C Alger Trigonometry Geometry Clculus Vectors Trigonometry Compound ngle formule sin sin cos cos Pge A B sin Acos B cos Asin B A B sin Acos B cos Asin B A B cos

More information

1 Bending of a beam with a rectangular section

1 Bending of a beam with a rectangular section 1 Bending of bem with rectngulr section x3 Episseur b M x 2 x x 1 2h M Figure 1 : Geometry of the bem nd pplied lod The bem in figure 1 hs rectngur section (thickness 2h, width b. The pplied lod is pure

More information

Silicon Nanowire Based Single-Molecule SERS Sensor

Silicon Nanowire Based Single-Molecule SERS Sensor Supporting informtion Silicon Nnowire Bsed Single-Molecule SERS Sensor Hui Wng, Xuemei Hn, Xuemei Ou, Chun-Sing Lee, Xiohong Zhng* nd Shuit-Tong Lee S1, A series of Si nnowires coted with compct ggregtes

More information

UNIVERSITY OF MALTA DEPARTMENT OF CHEMISTRY. CH237 - Chemical Thermodynamics and Kinetics. Tutorial Sheet VIII

UNIVERSITY OF MALTA DEPARTMENT OF CHEMISTRY. CH237 - Chemical Thermodynamics and Kinetics. Tutorial Sheet VIII UNIVERSITY OF MALTA DEPARTMENT OF CHEMISTRY CH237 - Chemicl Thermodynmics nd Kinetics Tutoril Sheet VIII 1 () (i) The rte of the rection A + 2B 3C + D ws reported s 1.0 mol L -1 s -1. Stte the rtes of

More information

CONTRIBUTION TO THE EXTENDED DYNAMIC PLANE SOURCE METHOD

CONTRIBUTION TO THE EXTENDED DYNAMIC PLANE SOURCE METHOD CONTRIBUTION TO THE EXTENDED DYNAMIC PLANE SOURCE METHOD Svetozár Mlinrič Deprtment of Physics, Fculty of Nturl Sciences, Constntine the Philosopher University, Tr. A. Hlinku, SK-949 74 Nitr, Slovki Emil:

More information

13.4 Work done by Constant Forces

13.4 Work done by Constant Forces 13.4 Work done by Constnt Forces We will begin our discussion of the concept of work by nlyzing the motion of n object in one dimension cted on by constnt forces. Let s consider the following exmple: push

More information

AB Calculus Review Sheet

AB Calculus Review Sheet AB Clculus Review Sheet Legend: A Preclculus, B Limits, C Differentil Clculus, D Applictions of Differentil Clculus, E Integrl Clculus, F Applictions of Integrl Clculus, G Prticle Motion nd Rtes This is

More information

Industrial Electrical Engineering and Automation

Industrial Electrical Engineering and Automation CODEN:LUTEDX/(TEIE-719)/1-7/(7) Industril Electricl Engineering nd Automtion Estimtion of the Zero Sequence oltge on the D- side of Dy Trnsformer y Using One oltge Trnsformer on the D-side Frncesco Sull

More information

The development of nanoscale morphology in polymer:fullerene. photovoltaic blends during solvent casting

The development of nanoscale morphology in polymer:fullerene. photovoltaic blends during solvent casting Supplementry informtion Supplementry Mteril (ES) for Soft Mtter The development of nnoscle morphology in polymer:fullerene photovoltic lends during solvent csting To Wng, * Aln D. F. Dunr, Pul A. Stniec,

More information

Reading from Young & Freedman: For this topic, read the introduction to chapter 24 and sections 24.1 to 24.5.

Reading from Young & Freedman: For this topic, read the introduction to chapter 24 and sections 24.1 to 24.5. PHY1 Electricity Topic 5 (Lectures 7 & 8) pcitors nd Dielectrics In this topic, we will cover: 1) pcitors nd pcitnce ) omintions of pcitors Series nd Prllel 3) The energy stored in cpcitor 4) Dielectrics

More information

( ) as a fraction. Determine location of the highest

( ) as a fraction. Determine location of the highest AB Clculus Exm Review Sheet - Solutions A. Preclculus Type prolems A1 A2 A3 A4 A5 A6 A7 This is wht you think of doing Find the zeros of f ( x). Set function equl to 0. Fctor or use qudrtic eqution if

More information

Unit 3: Direct current and electric resistance Electric current and movement of charges. Intensity of current and drift speed. Density of current in

Unit 3: Direct current and electric resistance Electric current and movement of charges. Intensity of current and drift speed. Density of current in Unit 3: Direct current nd electric resistnce Electric current nd movement of chrges. ntensity of current nd drift speed. Density of current in homogeneous currents. Ohm s lw. esistnce of homogeneous conductor

More information

4. CHEMICAL KINETICS

4. CHEMICAL KINETICS 4. CHEMICAL KINETICS Synopsis: The study of rtes of chemicl rections mechnisms nd fctors ffecting rtes of rections is clled chemicl kinetics. Spontneous chemicl rection mens, the rection which occurs on

More information

CALCULATED POWDER X-RAY DIFFRACTION LINE PROFILES VIA ABSORPTION

CALCULATED POWDER X-RAY DIFFRACTION LINE PROFILES VIA ABSORPTION 16 17 CALCULATED POWDER X-RAY DFFRACTON LNE PROFLES VA ABSORPTON Keji Liu nd Heifen Chen School of Mteril Science nd Engineering, Shnghi nstitute of Technology, Shnghi, Chin 2233 ABSTRACT We hve clculted

More information

FORM FIVE ADDITIONAL MATHEMATIC NOTE. ar 3 = (1) ar 5 = = (2) (2) (1) a = T 8 = 81

FORM FIVE ADDITIONAL MATHEMATIC NOTE. ar 3 = (1) ar 5 = = (2) (2) (1) a = T 8 = 81 FORM FIVE ADDITIONAL MATHEMATIC NOTE CHAPTER : PROGRESSION Arithmetic Progression T n = + (n ) d S n = n [ + (n )d] = n [ + Tn ] S = T = T = S S Emple : The th term of n A.P. is 86 nd the sum of the first

More information

( ) where f ( x ) is a. AB Calculus Exam Review Sheet. A. Precalculus Type problems. Find the zeros of f ( x).

( ) where f ( x ) is a. AB Calculus Exam Review Sheet. A. Precalculus Type problems. Find the zeros of f ( x). AB Clculus Exm Review Sheet A. Preclculus Type prolems A1 Find the zeros of f ( x). This is wht you think of doing A2 A3 Find the intersection of f ( x) nd g( x). Show tht f ( x) is even. A4 Show tht f

More information

Physics Lecture 14: MON 29 SEP

Physics Lecture 14: MON 29 SEP Physics 2113 Physics 2113 Lecture 14: MON 29 SEP CH25: Cpcitnce Von Kleist ws le to store electricity in the jr. Unknowingly, he h ctully invente novel evice to store potentil ifference. The wter in the

More information

NONDESTRUCTIVE TESTING IN DIAGNOSTICS OF HIGH-VOLTAGE VARISTORS

NONDESTRUCTIVE TESTING IN DIAGNOSTICS OF HIGH-VOLTAGE VARISTORS XIX IMEKO World Congress Fundmentl nd Applied Metrology Septemer 6 11, 2009, Lison, Portugl NONDESTRUCTIVE TESTING IN DIAGNOSTICS OF HIGH-VOLTAGE VARISTORS Lech Hsse, Jnusz Smulko Fculty of Electronics,

More information

Simulated Performance of Packed Bed Solar Energy Storage System having Storage Material Elements of Large Size - Part I

Simulated Performance of Packed Bed Solar Energy Storage System having Storage Material Elements of Large Size - Part I The Open Fuels & Energy Science Journl, 2008, 1, 91-96 91 Open Access Simulted Performnce of Pcked Bed Solr Energy Storge System hving Storge Mteril Elements of Lrge Size - Prt I Rnjit Singh *,1, R.P.

More information

physica status solidi applications and materials science

physica status solidi applications and materials science www.-.com pplictions nd mterils science Stiffening nd hydrophilistion of SOG low-k mteril studied by ellipsometric porosimetry, UV ellipsometry nd lser-induced surfce coustic wves A. M. Urbnowicz1, B.

More information

Supporting Information

Supporting Information Electronic Supplementry Mteril (ESI) for Nnoscle. This journl is The Royl Society of Chemistry Supporting Informtion A Dul-Emitting d-f Nnocrystlline Metl-Orgnic Frmework s Self- Clirting Luminescent Sensor

More information

2.4 Linear Inequalities and Interval Notation

2.4 Linear Inequalities and Interval Notation .4 Liner Inequlities nd Intervl Nottion We wnt to solve equtions tht hve n inequlity symol insted of n equl sign. There re four inequlity symols tht we will look t: Less thn , Less thn or

More information

Effect of acetone vapor treatment on photoluminescence of porous nc-si SiO x nanostructures

Effect of acetone vapor treatment on photoluminescence of porous nc-si SiO x nanostructures PACS 78.55.M, 79..Jv, 81..Ef Effect of cetone vpor tretment on photoluminescence of porous nc-si SiO x nnostructures I.Z. Indutnyi, K.V. Michilovsk, V.I. Min ko, P.E. Shepelivyi V. Lshkryov Institute of

More information

Lecture 6. Thermodynamics and Kinetics for Adsorption, Diffusion and Desorption

Lecture 6. Thermodynamics and Kinetics for Adsorption, Diffusion and Desorption Physics 986 Lecture 6 Thermodynmics nd Kinetics for Adsorption, Diffusion nd Desorption Physisorption Chemisorption Surfce Bonding Kinetics of Adsorption/Diffusion/Desorption References: ) Zngwill, Chpter

More information

Prediction of tool-chip contact length using a new slip-line solution for orthogonal cutting

Prediction of tool-chip contact length using a new slip-line solution for orthogonal cutting Interntionl Journl of Mchine Tools & Mnufcture 43 (2003) 1209 1215 Prediction of tool-chip contct length using new slip-line solution for orthogonl cutting Andrey Toropov, Sung-im Ko School of Mechnicl

More information

Designing Information Devices and Systems I Anant Sahai, Ali Niknejad. This homework is due October 19, 2015, at Noon.

Designing Information Devices and Systems I Anant Sahai, Ali Niknejad. This homework is due October 19, 2015, at Noon. EECS 16A Designing Informtion Devices nd Systems I Fll 2015 Annt Shi, Ali Niknejd Homework 7 This homework is due Octoer 19, 2015, t Noon. 1. Circuits with cpcitors nd resistors () Find the voltges cross

More information

332:221 Principles of Electrical Engineering I Fall Hourly Exam 2 November 6, 2006

332:221 Principles of Electrical Engineering I Fall Hourly Exam 2 November 6, 2006 2:221 Principles of Electricl Engineering I Fll 2006 Nme of the student nd ID numer: Hourly Exm 2 Novemer 6, 2006 This is closed-ook closed-notes exm. Do ll your work on these sheets. If more spce is required,

More information

Thermal Performance of Electrocaloric Refrigeration using Thermal Switches of Fluid Motion and Changing Contact Conductance

Thermal Performance of Electrocaloric Refrigeration using Thermal Switches of Fluid Motion and Changing Contact Conductance Americn Journl of Physics nd Applictions 2016; 4(5): 134-139 http://www.sciencepublishinggroup.com/j/jp doi:.11648/j.jp.20160405.12 ISSN: 2330-4286 (Print); ISSN: 2330-4308 (Online) Therml Performnce of

More information