5 Lithography - photoengraving - process of transferring a pattern into a reactive polymer film, termed at resist, which will subsequently be used to replicate that pattern into underlying thin film or substrate Lithography stone and mirror-image print of a map of Munich
7 Photo-lithography - diffraction limits maximum resolution and minimum size d 2bmin = 3 λ( s + ) 2 2b: grating period s: gap width λ: wavelength d: photoresist thickness - for hard contact printing, s=0, λ=400 nm, d=1 μm, 2b min ~ 1μm maximum resolution- seldom achieved because of dust on the substrate and non-uniformity of resist thickness Proximity printing- resolution decreases with increasing gap difficulty in the control of constant gap space 7
8 J.D. Plummer, Silicon VLSI Technology, 2000.
9 Photo-lithography - projection printing- lens- lens imperfection and diffraction - resolution- Rayleigh criterion~ λ/2 (200 nm) - for higher resolution, short wavelength and larger NA - for high NA, small depth of focus- sensitive to slight variations in the thickness and absolute position of the resist layer kλ k λ,, sinθ NA NA 1 2 R = DOF = NA = n 2 9 k 1 : 0.61 (0.6~0.8) k 2 : 0.5 λ: wavelength NA: numerical aperture (~0.5) n: refractive index(=1) S. Okazaki, J. Vac. Sci. Tech. B9 (1991) 2829.
10 Photo-lithography - deep ultra-violet lithography (DUV) 436 nm 248 nm 193 nm157 nm 10 T. Ito, Nature, 406 (2000) S. Okazaki, J. Vac. Sci. Tech. B9 (1991) 2829.
13 Phase-shifting photo-lithography - phase shifter or phase mask with thickness 2( n 1) phase shift by 180 o - destructive interference between wave diffracted from adjacent apertures- higher resolution difficult to apply to random pattern t = λ 13 M.D.Levenson, IEEE Trans. Electron Dev. ED-29(1982)1828. S. Okazaki, J. Vac. Sci. Tech. B9 (1991) 2829.
14 Phase-shifting photo-lithography - elastomeric phase mask PDMS 14 J.A. Roger, J. Vac. Sci. Tech. B16 (1998) 59.
16 Electron beam lithography - focused beam of electrons - fabrication of features as small as 3-5 nm - limited by forward scattering of the electrons in the resist and back scattering from the underlying substrate - scanning or projecting - very small throughput Focused e-beam Resist Substrate 16 C. Vieu, Appl. Surf. Sci. 164 (2000) 111.
17 Electron beam lithography - SCALPEL (scattering angular-limited projection electron-beam lithography) Si 3 N 4 Cr or W back focal plane 17 S.D. Berger, J. Vac. Sci. Tech. B9 (1991)2996.
19 X-ray lithography - X-ray: λ= 0.04~0.5 nm - difficult to focus X-ray proximity printing - mask: Si, Si 3 N 4, SiC (transmitting)+ Au, W, Ta (absorbing) - source: electron impact, synchrotron - mirror: multilayer Synchrotron radiation (0.65~1.2 nm, 0.7 nm) 2-μm thick SiN membrane, 0.65 μm thick Ta absorber 19 K. Deguchi, Jpn. J. Appl. Phys. 31 (1992) 2954.
20 X-ray lithography - ex) synchrotron radiation 1.1 nm electroplated Au/SiC absorber and sputtered W/SiC absorber PMAA, PMAA/MAA resist on Si or Cr/Au coated Si 20 G. Simon, J. Vac. Sci. Tech. B15 (1997) 2489.
21 Focused ion beam (FIB) lithography - scattering of ions in MeV range- several order of magnitude less than electrons - Ga, Au-Si-Be alloys- long lifetime and high stability - high resist exposure sensitivity, negligible ion scattering in the resist, low back scattering from the substrate - magnetic nanostructure- less influenced by magnetic properties of material - direct etching and deposition capability 21 S. Matsui, nanotechnology, 7 (1996) 247. S. Matsui, J. Vac. Sci. Tech. B9 (1991) 2622.
22 Focused ion beam (FIB) lithography - deposition - etching physical sputter chemical assisted 22 A. Wagner, J. Vac. Sci. Tech. B8 (1990) S. Matsui, nanotechnology, 7 (1996) 247.
23 Focused ion beam (FIB) lithography - nanomagnetic probe etching Ni45Fe55 deposition W 23 S. Khizroev, Nanotechnology, 13 (2002) 619.
24 Neutral atomic beam lithography - neutral atom- no space charge, divergent - neutral atom + laser light focusing - direct patterning- neutral chromium atoms 24 J.J. McClelland, Science, 262 (1993) 877.
25 Neutral atomic beam lithography - patterning of a special resist- argon atom dodecanethiolate ferricyanide etch 25 K.K. Berggren, Science, 269 (1995) 1255.
26 Neutral atomic beam lithography - neutral chromium atoms 26 B. Brezger, J. Vac. Sci. Tech. B15 (1997) 2905.
27 Neutral atomic beam lithography - neutral chromium atoms 27 B. Brezger, J. Vac. Sci. Tech. B15 (1997) 2905.
28 Technological trends in lithography 28 T. Ito, Nature, 406 (2000) 1027.
29 Fabrication of Nano Structure-nanomanipulation STM - xenon atoms on an single crystal nickel surface - parallel processes- field assisted diffusion sliding - perpendicular process- transfer near or on contact - field evaporation -electromigration 29 D.E. Eigler, Nature, 344 (1990) 524.
30 Fabrication of Nano Structure-nanomanipulation STM - chemical reaction 30 S.W. Hla, Phys. Rev. Lett. 85 (2000) 2775.
31 Fabrication of Nano Structure-nanomanipulation AFM - mechanical pushing 31 C. Baur, nanotechnology, 9 (1998) 360.
32 Fabrication of Nano Structure-nanolithography STM - field evaporation by bias pulse on Si(111) T.T. Tsong, Phys. Rev. B44 (1991)13703). 32 X. Hu, Nanotechnology, 10 (1999) 209.
33 AFM - scratching Fabrication of Nano Structure-nanolithography Al Ti 33 A. Notargiacomo, Nanotechnology, 10 (1999) 458.
34 Fabrication of Nano Structure-nanolithography AFM - scratching the native oxide covered Si by AFM (diamond-coated tip) and electrodeposition of Cu 34 L. Santinacci, Appl. Phys. Lett. 79(2001)1882.
35 Fabrication of Nano Structure-nanolithography AFM - nanoshaving by AFM+ surface initiated polymerization thiol initiator poly(n-isopropylacrylamide) M. Kaholek, Nanoletter, 4(2004)
36 Fabrication of Nano Structure-soft lithography Soft lithography - a set of non-photolithographic techniques for microfabrication that are based on printing of SAMs and molding of liquid precursors -reviews Y. Xia, Chem. Review, 99, 1823 (1999). Y. Xia, Angew. Chem. Int. Ed. 37, 550 (1998). Y. Xia, Annu. Rev. Mater. Sci. 28, 153 (1998). M. Geissler, Adv. Mater. 16, 1249 (2004). 36
37 Fabrication of Nano Structure-soft lithography Microcontact printing - use an elastomeric stamp with relief on its surface to generate SAMs on the surface of planar and curved substrate - SAM- highly ordered molecular assemblies that form spontaneously by chemisorption of functionalized long chain molecules on the surface of appropriate substrate ex) alkaneithiolates on Au, Ag, Cu 37
43 Fabrication of Nano Structure-soft lithography Nanoimprint - Cr stamp PMMA above Tg Cr mask ZEP520A7 resist 43 S. Zankovych, Nanotechnology, 12 (2001) 91. I. Maximov, 13 (2002) 666.
44 Fabrication of Nano Structure-soft lithography Dip-pen lithography - direct writing based on AFM and works under ambient conditions - chemisorption acts as a driving force for moving the molecules from AFM tip to the substrate via water filled capillary when the tip is scanned across a substrate ODT on Au(111)/mica 44 R.D. Piner, Science 283 (1999) 661.
46 Ink Jet Printing - an attractive technique for depositing materials on surfaces with a good spatial control A Fabrication of Nano Structure-soft lithography A) Droplet during inkjet printing B) Patterning on a substrate C) Pillar formation of lead zirconium titanate B C 46 B-J de Gans, Adv. Mater. 16 (2004) 203.
47 Fabrication of Nano Structure-soft lithography Ink Jet Printing A B A) Dependence on the viscosity of solution B) Patterning on a substrate C C) transistor fabrication (gate) using ink jet printing 47 B-J de Gans, Adv. Mater. 16 (2004) 203.
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