Starting solution. Hydrolysis reaction under thermostatic conditions. Check of viscosity and deposition test SOL. Deposition by spin coating
|
|
- Marvin Lawrence
- 5 years ago
- Views:
Transcription
1 Supplementary Figures Tetramethyl orthosilicate (TMOS) Tetrahydrofuran anhydrous (THF) Trimethyl methoxy silane (TMMS) Trimethyl silil acetate (TMSA) Starting solution Hydrolysis reaction under thermostatic conditions Dibutyl tin diacetate (DBTDA) H 2 O Poorly hydrolyzed SOL Check of viscosity and deposition test SOL Deposition by spin coating Sintering Supplementary Figure S1. Flow chart of the synthesis process. Flow chart of the synthesis process for the fabrication of nanostructured SnO 2 :SiO 2 thin films. 1
2 Supplementary Figure S2. Refractive index measurements of NS films. Prism-coupler measurements of guided modes at 633 nm in SnO 2 :SiO 2 sol-gel films at different steps of the synthesis process, with the calculated values of thickness and refractive index. (a) before heat treatment, (b) after treatment at 450 C, (c) after treatment at 1050 C. (d) Refractive index values at 633 nm in film with different Sn content and produced in different conditions. The error bars represent the standard error measured for at least 5 measurements per point. 2
3 Supplementary Figure S3. FTIR spectra for NS-films on silicon substrates. FTIR spectra for NSfilms on silicon substrates after the last stage of sintering. The films are produced starting from different concentrations of Sn-precursor and different oxygen partial pressure (see Supplementary Table 2 for details). 3
4 Supplementary Figure S4. Optical transmission of NS films on quartz. (a) UV Vis transmittance of SnO 2 :SiO 2 thin films with increasing Sn content (9, 15, 30%) deposited on fused quartz substrate and sintered in high (dashed lines) and low (full lines) partial pressure of oxygen. (b) Transmittance spectra after cleaning, compared with substrate spectrum (dotted line) of SnO 2 :SiO 2 thin films with increasing Sn content (9, 13%). 4
5 Supplementary Figure S5. Energy band diagram and current responses. Energy band diagram of a NS SnO 2 :SiO 2 thin film showing the top level of the valence band and the bottom level of the conduction band in the SiO 2 matrix (cyan), in the SnO 2 nanoparticles (blue), and in the SnO-like interphase at the nanoparticle surface (pink), as well as the band structure of p-si substrate (grey) and the gate Fermi level for the Ti electrode and Au capping layer. Possible charge transport paths for electrons (e - ) and holes (h + ) are indicated in the case of (a) forward and (b) reverse bias. Energy contributions from band bending, external electric field, and Coulomb repulsion in charged nanoparticles are not included. Note that hole-transport does occur only in forward bias (as emphasized by the grey arrows in b ) and is strictly enabled by the presence of the p-type SnO x<2 phase at the nanoparticle surface. (c) Current density characteristics of a UV NS-LED (nominal Sn concentration 16%). (d) Current density characteristics of a SnO 2 :SiO 2 film sintered in low oxygen partial pressure (nominal Sn concentration 15%).Inset: Electroluminescence spectra of a SnO 2 :SiO 2 film sintered in low oxygen partial pressure (nominal Sn concentration 15%). The signal at 0 V bias is reported as a black line for enabling the comparison between the signal-to-noise ratios. 5
6 Supplementary Figure S6. Charge transport in nanostructured films. lni vs. E 1/2 data in nanostructured films produced in different conditions and with different Sn content, with gate voltage in (a) reverse and (b) forward bias. Electroluminescent films show an almost linear dependence of lni with E 1/2 both in reverse and direct bias, showing a dominant Schottky behavior. Arrhenius plot (LnI vs. 1/kT ) of an electroluminescent (green circles) and a non-electroluminescent (orange circles) devices under (c) reverse and (d) forward bias. 6
7 Supplementary Tables Supplementary Table S1. Examples of sol composition for the synthesis of nanostructured SnO 2 - doped silica films. ml of reagent example1 example2 example3 example4 TMOS TMSA TMMS DBTDA THF At least 2.0 ml H 2 O
8 Supplementary Table S2. Summary of representative NS-Films synthesized with different initial amount of Sn precursor and in different conditions of sintering time and atmosphere. sintering Sn, % process Notes sinter. Conditions long sinter 2% O 2 in Ar S831 S813 S821 short sinter on Si-substrates on Si-substrates on transparent substrates 2% O 2 in Ar S % O 2 in Ar S831 S813b S821b S1022b 3.4% O 2 in Ar S 831r S1222 S813r S821r S 1212 S1032rb 0.3% O 2 in Ar S1032rb* 0.3% O 2 in Ar S1411 S1421 S1431 2% O 2 in Ar S1412 S1422 S1432 *Synthesized using a new batch of reagents with respect to sample S1022b in order to reduce the effects of aging of the reagents on the film quality. 8
9 Supplementary Discussion Charge Transport mechanism in SnO 2 :SiO 2 NS films The electrical properties of SnO 2 :SiO 2 NS films depend strongly on the nanoarchitecture of the material and in particular on the thickness of the substoichiometric interface between the SnO 2 nanocrystals and the silica matrix. The NP-host interphase, whose relative contribution to the nanophase depends on the synthesis parameters, is a SnO-like phase 36 with electric properties that differ from SnO 2. In fact, while SnO 2 is a wide-band gap semiconductor (E g = 3.6 ev) with n- type character due to oxygen vacancy defects (V O ), 38,52 SnO is a semiconductor with energy gap of 2.3 ev and p-type character 37. Therefore, the relative volume ratio between the n-type and the p- type domains in the film ultimately determines the percolation mechanism and the electroluminescence properties of the material. For this reason, accurate control of the synthesis and annealing parameter is required to produce NS films with balanced electron and hole transport features, so as to optimize the generation of excitons inside the film. Such control is achievable, for example, through suitable choice of annealing atmosphere. We may distinguish between two classes of devices: UV-LEDs with charge transport properties due to simultaneous injection and transport of both electrons and holes, resulting in efficient UV-EL; and devices with poor or none EL emission due to almost completely suppressed electron currents, which leads to strongly unbalanced electron/hole ratios. Such behaviours can be rationalized by looking at energy level diagrams in Supplementary Fig. S5a and S5b: in forward bias (negative bias applied at the cathode, Fig. S5a), holes are injected from the p-silicon substrate into the valence band of the SnO x<2 shell around the SnO 2 nanocrystals, and contribute to the electric current due to electrons injected from the cathode into the conduction band of SnO 2. When positive bias is instead applied at the cathode (reverse bias, Fig. S5b), charge transport can only be sustained by electrons injected from the p-si substrate into the conduction band of SnO 2, which leads to the lower currents registered in reverse bias. The simultaneous injection of both charge carries is crucial for achieving electroluminescent emission and, therefore, only NS films that allow hole and electron transport simultaneously are suitable as active layers in UV NS-LEDs (rappresentative IV response of a UV-LED is shown in Fig. S5c). Importantly, a particularly thick substoichiometric NC shell prevents injection of electrons into the 9
10 n-type SnO 2 cores. Accordingly, we register almost no currents in reverse bias in samples synthesized in conditions that induce thick oxygen substoichiometric interfaces (Supplementary Fig. S5d), such as thermal annealing in oxygen-poor atmosphere. In this case, the electric characteristic in forward bias is determined primarily by hole injection from the p-type Si substrate into the SnO-like interphase, which leads to an Ohmic I-V behaviour. Importantly, electron injection is strongly inhibited in films produced in conditions that promote the formation of thick substoichiometric interfaces (i.e. fast heating rates, low oxygen pressure). Hence, in devices incorporating this latter NS films, the relative concentration of holes and electrons is strongly unbalanced, which leads to weak electroluminescence emission (inset of Fig. S5d). Further, EL from such devices is limited to the red spectral region and no exciton-like contribution in the UV is observed, which suggests that charge transport is primarily sustained by defect states. Importantly, the injection process from the electrodes and the charge hopping within NPs requires non-null activation energies, which lead to thermally activated contributions to the conductivity. The electric response in reverse bias, as well as in forward bias in the case of electroluminescent films, reflects this kind of conduction regime with a typical Arrhenius behaviour. For electroluminescent devices, the electric response in both forward and reverse bias is not Ohmic and we observe a linear dependence of lni vs. E 1/2, suggesting that charge transport is mediated by a Schottky-like mechanism (Supplementary Figures S6a-b). In non-electroluminescent devices, the conduction in reverse bias is governed by p-type transport sustained by holes injected from the Si substrate and mediated by SnO-like shells around the SnO 2 NCs. In these cases, the fraction of the substoichiometric conductive path is relevant and results in a metal-like character of the NS film. Consequently, in reverse bias the thermal coefficient of resistivity may become positive (Fig. S6c-d). 10
Plasmon enhanced UV electroluminescence in SiO 2 with percolating conduction sustained by free-exciton emitting SnO 2 nanoparticles
Dipartimento di Scienza dei Materiali Università di Milano-Bicocca TITLE Plasmon enhanced UV electroluminescence in O 2 with percolating conduction sustained by free-exciton emitting SnO 2 nanoparticles
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2012.63 Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control Liangfeng Sun, Joshua J. Choi, David Stachnik, Adam C. Bartnik,
More informationSupplementary Figure 1 XRD pattern of a defective TiO 2 thin film deposited on an FTO/glass substrate, along with an XRD pattern of bare FTO/glass
Supplementary Figure 1 XRD pattern of a defective TiO 2 thin film deposited on an FTO/glass substrate, along with an XRD pattern of bare FTO/glass and a reference pattern of anatase TiO 2 (JSPDS No.: 21-1272).
More informationHigh-Performance Semiconducting Polythiophenes for Organic Thin Film. Transistors by Beng S. Ong,* Yiliang Wu, Ping Liu and Sandra Gardner
Supplementary Materials for: High-Performance Semiconducting Polythiophenes for Organic Thin Film Transistors by Beng S. Ong,* Yiliang Wu, Ping Liu and Sandra Gardner 1. Materials and Instruments. All
More informationSupplementary documents
Supplementary documents Low Threshold Amplified Spontaneous mission from Tin Oxide Quantum Dots: A Instantiation of Dipole Transition Silence Semiconductors Shu Sheng Pan,, Siu Fung Yu, Wen Fei Zhang,
More informationA Plasmonic Photocatalyst Consisting of Silver Nanoparticles Embedded in Titanium Dioxide. Ryan Huschka LANP Seminar February 19, 2008
A Plasmonic Photocatalyst Consisting of Silver Nanoparticles Embedded in Titanium Dioxide Ryan Huschka LANP Seminar February 19, 2008 TiO 2 Applications White Pigment Photocatalyst Previous methods to
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm 2 Name: SID: Closed book. Two sheets of notes are
More informationMulticolor Graphene Nanoribbon/Semiconductor Nanowire. Heterojunction Light-Emitting Diodes
Multicolor Graphene Nanoribbon/Semiconductor Nanowire Heterojunction Light-Emitting Diodes Yu Ye, a Lin Gan, b Lun Dai, *a Hu Meng, a Feng Wei, a Yu Dai, a Zujin Shi, b Bin Yu, a Xuefeng Guo, b and Guogang
More informationPhotocatalysis: semiconductor physics
Photocatalysis: semiconductor physics Carlos J. Tavares Center of Physics, University of Minho, Portugal ctavares@fisica.uminho.pt www.fisica.uminho.pt 1 Guimarães Where do I come from? 3 Guimarães 4 Introduction>>
More informationSUPPLEMENTARY INFORMATION
doi:10.1038/nature13734 1. Gate dependence of the negatively charged trion in WS 2 monolayer. We test the trion with both transport and optical measurements. The trion in our system is negatively charged,
More informationSupporting Information. Room temperature aqueous Sb 2 S 3 synthesis for inorganic-organic sensitized solar cells with efficiencies of up to 5.
Electronic Supplementary Material (ESI) for ChemComm. This journal is The Royal Society of Chemistry 2015 Supporting Information Room temperature aqueous Sb 2 S 3 synthesis for inorganic-organic sensitized
More informationLecture 9: Metal-semiconductor junctions
Lecture 9: Metal-semiconductor junctions Contents 1 Introduction 1 2 Metal-metal junction 1 2.1 Thermocouples.......................... 2 3 Schottky junctions 4 3.1 Forward bias............................
More informationP.O. Box 6079, Station Centre-Ville, Montreal, QC H3C 3A7, Canada.
Supplementary Material: Thermal properties of methyltrimethoxysilane aerogel thin films Leandro N. Acquaroli, 1, a) Pascal Newby, 2 Clara Santato, 1 1, b) and Yves-Alain Peter 1) Department of Engineering
More informationTraps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy
Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Yutaka Tokuda Department of Electrical and Electronics Engineering, Aichi Institute of Technology,
More informationFabrication Technology, Part I
EEL5225: Principles of MEMS Transducers (Fall 2004) Fabrication Technology, Part I Agenda: Microfabrication Overview Basic semiconductor devices Materials Key processes Oxidation Thin-film Deposition Reading:
More informationSemiconductor. Byungwoo Park. Department of Materials Science and Engineering Seoul National University.
Semiconductor Byungwoo Park Department of Materials Science and Engineering Seoul National University http://bp.snu.ac.kr http://bp.snu.ac.kr Semiconductors Kittel, Solid State Physics (Chapters 7 and
More informationElectroluminescence from Silicon and Germanium Nanostructures
Electroluminescence from silicon Silicon Getnet M. and Ghoshal S.K 35 ORIGINAL ARTICLE Electroluminescence from Silicon and Germanium Nanostructures Getnet Melese* and Ghoshal S. K.** Abstract Silicon
More informationSupplementary Figure S1. AFM characterizations and topographical defects of h- BN films on silica substrates. (a) (c) show the AFM height
Supplementary Figure S1. AFM characterizations and topographical defects of h- BN films on silica substrates. (a) (c) show the AFM height topographies of h-bn film in a size of ~1.5µm 1.5µm, 30µm 30µm
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements HW#3 is assigned due Feb. 20 st Mid-term exam Feb 27, 2PM
More informationSupplementary Figure S1 TEM images of a synthesis batch of PbS and Bi-doped PbS QDs (Bi/Pb=3.2%) and corresponding size distribution histograms (100
Supplementary Figure S1 TEM images of a synthesis batch of PbS and Bi-doped PbS QDs (Bi/Pb=3.2%) and corresponding size distribution histograms (100 QDs population in each sample) yielding average diameters
More informationMetallic: 2n 1. +n 2. =3q Armchair structure always metallic = 2
Properties of CNT d = 2.46 n 2 2 1 + n1n2 + n2 2π Metallic: 2n 1 +n 2 =3q Armchair structure always metallic a) Graphite Valence(π) and Conduction(π*) states touch at six points(fermi points) Carbon Nanotube:
More informationElectronic Supplementary Information for
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 018 Electronic Supplementary Information for Broadband Photoresponse Based on
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16 Announcements Professor Javey will hold his OH at
More information1. Depleted heterojunction solar cells. 2. Deposition of semiconductor layers with solution process. June 7, Yonghui Lee
1. Depleted heterojunction solar cells 2. Deposition of semiconductor layers with solution process June 7, 2016 Yonghui Lee Outline 1. Solar cells - P-N junction solar cell - Schottky barrier solar cell
More informationCurrent mechanisms Exam January 27, 2012
Current mechanisms Exam January 27, 2012 There are four mechanisms that typically cause currents to flow: thermionic emission, diffusion, drift, and tunneling. Explain briefly which kind of current mechanisms
More informationSupplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently,
Supplementary Figure S1. AFM images of GraNRs grown with standard growth process. Each of these pictures show GraNRs prepared independently, suggesting that the results is reproducible. Supplementary Figure
More informationPhotonic structuring improves colour purity of rare-earth. nanophosphors
Electronic Supplementary Material (ESI) for Materials Horizons. This journal is The Royal Society of Chemistry 2018 Supporting Information Photonic structuring improves colour purity of rare-earth nanophosphors
More informationGiant Gating Tunability of Optical Refractive Index in Transition Metal Dichalcogenide Monolayers
Supporting Information Giant Gating Tunability of Optical Refractive Index in Transition Metal Dichalcogenide Monolayers Yiling Yu 1,2, Yifei Yu 1, Lujun Huang 1, Haowei Peng 3, Liwei Xiong 1,4 and Linyou
More informationChapter 3 Properties of Nanostructures
Chapter 3 Properties of Nanostructures In Chapter 2, the reduction of the extent of a solid in one or more dimensions was shown to lead to a dramatic alteration of the overall behavior of the solids. Generally,
More informationTransport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System
Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System Nadya Mason Travis Dirk, Yung-Fu Chen, Cesar Chialvo Taylor Hughes, Siddhartha Lal, Bruno Uchoa Paul Goldbart University
More informationLecture 7: Extrinsic semiconductors - Fermi level
Lecture 7: Extrinsic semiconductors - Fermi level Contents 1 Dopant materials 1 2 E F in extrinsic semiconductors 5 3 Temperature dependence of carrier concentration 6 3.1 Low temperature regime (T < T
More informationSupporting Information
Supporting Information Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits Yuanda Liu, and Kah-Wee Ang* Department of Electrical and Computer Engineering National University
More informationCarbon Nanotube Thin-Films & Nanoparticle Assembly
Nanodevices using Nanomaterials : Carbon Nanotube Thin-Films & Nanoparticle Assembly Seung-Beck Lee Division of Electronics and Computer Engineering & Department of Nanotechnology, Hanyang University,
More informationCHAPTER 3. FABRICATION TECHNOLOGIES OF CdSe/ZnS / Au NANOPARTICLES AND NANODEVICES. 3.1 THE SYNTHESIS OF Citrate-Capped Au NANOPARTICLES
CHAPTER 3 FABRICATION TECHNOLOGIES OF CdSe/ZnS / Au NANOPARTICLES AND NANODEVICES 3.1 THE SYNTHESIS OF Citrate-Capped Au NANOPARTICLES Au NPs with ~ 15 nm were prepared by citrate reduction of HAuCl 4
More informationSupporting Information
Supporting Information Band Gap Tuning of CH 3 NH 3 Pb(Br 1-x Cl x ) 3 Hybrid Perovskite for Blue Electroluminescence Naresh K. Kumawat 1, Amrita Dey 1, Aravindh Kumar 2, Sreelekha P. Gopinathan 3, K.
More informationSupporting Information. Effects of Environmental Water Absorption by. Film Transistor Performance and Mobility
Supporting Information Effects of Environmental Water Absorption by Solution-Deposited Al 2 O 3 Gate Dielectrics on Thin Film Transistor Performance and Mobility Trey B. Daunis, James M. H. Tran, and Julia
More informationSupplementary Figure 1. Cross-section SEM image of the polymer scaffold perovskite film using MAI:PbI 2 =1:1 in DMF solvent on the FTO/glass
Supplementary Figure 1. Cross-section SEM image of the polymer scaffold perovskite film using MAI:PbI 2 =1:1 in DMF solvent on the FTO/glass substrate. Scale bar: 1 m. Supplementary Figure 2. Contact angle
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationSupplementary Information. Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye. Nanostructures
Supplementary Information Light Manipulation for Organic Optoelectronics Using Bio-inspired Moth's Eye Nanostructures Lei Zhou, Qing-Dong Ou, Jing-De Chen, Su Shen, Jian-Xin Tang,* Yan-Qing Li,* and Shuit-Tong
More informationNanoelectronics. Topics
Nanoelectronics Topics Moore s Law Inorganic nanoelectronic devices Resonant tunneling Quantum dots Single electron transistors Motivation for molecular electronics The review article Overview of Nanoelectronic
More informationSolutions for Assignment-8
Solutions for Assignment-8 Q1. The process of adding impurities to a pure semiconductor is called: [1] (a) Mixing (b) Doping (c) Diffusing (d) None of the above In semiconductor production, doping intentionally
More informationThe Role of Hydrogen in Defining the n-type Character of BiVO 4 Photoanodes
Supporting Information The Role of Hydrogen in Defining the n-type Character of BiVO 4 Photoanodes Jason K. Cooper, a,b Soren B. Scott, a Yichuan Ling, c Jinhui Yang, a,b Sijie Hao, d Yat Li, c Francesca
More informationA. Optimizing the growth conditions of large-scale graphene films
1 A. Optimizing the growth conditions of large-scale graphene films Figure S1. Optical microscope images of graphene films transferred on 300 nm SiO 2 /Si substrates. a, Images of the graphene films grown
More informationReview of Semiconductor Fundamentals
ECE 541/ME 541 Microelectronic Fabrication Techniques Review of Semiconductor Fundamentals Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Page 1 Semiconductor A semiconductor is an almost insulating material,
More informationCH676 Physical Chemistry: Principles and Applications. CH676 Physical Chemistry: Principles and Applications
CH676 Physical Chemistry: Principles and Applications Crystal Structure and Chemistry Synthesis of Tetrahexahedral Platinum Nanocrystals with High-Index Facets and High Electro-Oxidation Activity Na Tian
More informationSupplementary Information
Supplementary Information Ambient effects on electrical characteristics of CVD-grown monolayer MoS 2 field-effect transistors Jae-Hyuk Ahn, 1,2 William M. Parkin, 1 Carl H. Naylor, 1 A. T. Charlie Johnson,
More informationSupplementary Figure 1 a-c, The viscosity fitting curves of high-molecular-weight poly(vinyl alcohol) (HMW-PVA) (a), middle-molecular-weight
Supplementary Figure 1 a-c, The viscosity fitting curves of high-molecular-weight poly(vinyl alcohol) (HMW-PVA) (a), middle-molecular-weight poly(vinyl alcohol) (MMW-PVA) (b) and low-molecular-weight poly(vinyl
More informationTheory of Electrical Characterization of Semiconductors
Theory of Electrical Characterization of Semiconductors P. Stallinga Universidade do Algarve U.C.E.H. A.D.E.E.C. OptoElectronics SELOA Summer School May 2000, Bologna (It) Overview Devices: bulk Schottky
More informationPlasmonic Hot Hole Generation by Interband Transition in Gold-Polyaniline
Supplementary Information Plasmonic Hot Hole Generation by Interband Transition in Gold-Polyaniline Tapan Barman, Amreen A. Hussain, Bikash Sharma, Arup R. Pal* Plasma Nanotech Lab, Physical Sciences Division,
More informationDirect-writing on monolayer GO with Pt-free AFM tips in the
Supplementary Figure S1 Direct-writing on monolayer GO with Pt-free AFM tips in the presence of hydrogen. We replaced the Pt-coated tip with a gold-coated tip or an untreated fresh silicon tip, and kept
More informationSpiro-Configured Bifluorenes: Highly Efficient Emitter for UV Organic Light-Emitting Device and Host Material for Red Electrophosphorescence
Spiro-Configured Bifluorenes: Highly Efficient Emitter for UV Organic Light-Emitting Device and Host Material for Red Electrophosphorescence Ken-Tsung Wong,* a Yuan-Li Liao, a Yu-Ting Lin, b Hai-Ching
More informationGraphene photodetectors with ultra-broadband and high responsivity at room temperature
SUPPLEMENTARY INFORMATION DOI: 10.1038/NNANO.2014.31 Graphene photodetectors with ultra-broadband and high responsivity at room temperature Chang-Hua Liu 1, You-Chia Chang 2, Ted Norris 1.2* and Zhaohui
More informationElectronic Supplementary Information. Au/Ag Core-shell Nanocuboids for High-efficiency Organic Solar Cells with Broadband Plasmonic Enhancement
Electronic Supplementary Material (ESI) for Energy & Environmental Science. This journal is The Royal Society of Chemistry 2016 Electronic Supplementary Information Au/Ag Core-shell Nanocuboids for High-efficiency
More informationSUPPLEMENTARY INFORMATION
Lateral heterojunctions within monolayer MoSe 2 -WSe 2 semiconductors Chunming Huang 1,#,*, Sanfeng Wu 1,#,*, Ana M. Sanchez 2,#,*, Jonathan J. P. Peters 2, Richard Beanland 2, Jason S. Ross 3, Pasqual
More informationSoluble Precursor of Hexacene and its Application on Thin Film Transistor
Soluble Precursor of Hexacene and its Application on Thin Film Transistor Supplementary Information Motonori Watanabe, a Wei-Ting Su, b Kew-Yu Chen,* c Ching-Ting Chien, a Ting-Han Chao, a Yuan Jay Chang,
More informationJ. Price, 1,2 Y. Q. An, 1 M. C. Downer 1 1 The university of Texas at Austin, Department of Physics, Austin, TX
Understanding process-dependent oxygen vacancies in thin HfO 2 /SiO 2 stacked-films on Si (100) via competing electron-hole injection dynamic contributions to second harmonic generation. J. Price, 1,2
More informationSupplementary Figure 1. Supplementary Figure 1 Characterization of another locally gated PN junction based on boron
Supplementary Figure 1 Supplementary Figure 1 Characterization of another locally gated PN junction based on boron nitride and few-layer black phosphorus (device S1). (a) Optical micrograph of device S1.
More informationREDUCED GRAPHITE OXIDE-INDIUM TIN OXIDE COMPOSITES FOR TRANSPARENT ELECTRODE USING SOLUTION PROCESS
18 TH INTERNATIONAL CONFERENCE ON COMPOSITE MATERIALS REDUCED GRAPHITE OXIDE-INDIUM TIN OXIDE COMPOSITES FOR TRANSPARENT ELECTRODE USING SOLUTION PROCESS K. S. Choi, Y. Park, K-.C. Kwon, J. Kim, C. K.
More informationIntensity / a.u. 2 theta / deg. MAPbI 3. 1:1 MaPbI 3-x. Cl x 3:1. Supplementary figures
Intensity / a.u. Supplementary figures 110 MAPbI 3 1:1 MaPbI 3-x Cl x 3:1 220 330 0 10 15 20 25 30 35 40 45 2 theta / deg Supplementary Fig. 1 X-ray Diffraction (XRD) patterns of MAPbI3 and MAPbI 3-x Cl
More informationSUPPLEMENTARY INFORMATION
Collapse of superconductivity in a hybrid tin graphene Josephson junction array by Zheng Han et al. SUPPLEMENTARY INFORMATION 1. Determination of the electronic mobility of graphene. 1.a extraction from
More informationFormation mechanism and Coulomb blockade effect in self-assembled gold quantum dots
Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots S. F. Hu a) National Nano Device Laboratories, Hsinchu 300, Taiwan R. L. Yeh and R. S. Liu Department of Chemistry, National
More informationElectronic Supplementary Information. Molecular Antenna Tailored Organic Thin-film Transistor for. Sensing Application
Electronic Supplementary Material (ESI) for Materials Horizons. This journal is The Royal Society of Chemistry 2017 Electronic Supplementary Information Molecular Antenna Tailored Organic Thin-film Transistor
More informationSolid State Detectors
Solid State Detectors Most material is taken from lectures by Michael Moll/CERN and Daniela Bortoletto/Purdue and the book Semiconductor Radiation Detectors by Gerhard Lutz. In gaseous detectors, a charged
More informationSupporting Information:
Supporting Information: Columnar Self-assembly of Cu 2 S Hexagonal Nanoplates Induced by Tin (IV)-X Complex Inorganic Surface Ligand Xiaomin Li, Huaibin Shen, Jinzhong Niu, Sen Li, Yongguang Zhang, Hongzhe
More informationBiologically Inspired Organic Light-Emitting Diodes
Supporting Information Biologically Inspired Organic Light-Emitting Diodes Jae-Jun Kim,, Jaeho Lee, Sung-Pyo Yang, Ha Gon Kim, Hee-Seok Kweon ǁ, Seunghyup Yoo, and Ki-Hun Jeong*, Department of Bio and
More informationNanostructured Organic-Inorganic Thin Film Photovoltaics
Supporting Information Fabrication of Coaxial TiO 2 /Sb 2 S 3 Nanowire Hybrids for Nanostructured Organic-Inorganic Thin Film Photovoltaics Juliano C. Cardoso, a Craig A. Grimes,*,a Xinjian Feng, b Xiaoyan
More informationFermi Level Pinning at Electrical Metal Contacts. of Monolayer Molybdenum Dichalcogenides
Supporting information Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides Changsik Kim 1,, Inyong Moon 1,, Daeyeong Lee 1, Min Sup Choi 1, Faisal Ahmed 1,2, Seunggeol
More informationChapter - 8. Summary and Conclusion
Chapter - 8 Summary and Conclusion The present research explains the synthesis process of two transition metal oxide semiconductors SnO 2 and V 2 O 5 thin films with different morphologies and studies
More informationSchottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function
More informationMSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University
MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
More informationSUPPLEMENTARY INFORMATION
Electrical control of single hole spins in nanowire quantum dots V. S. Pribiag, S. Nadj-Perge, S. M. Frolov, J. W. G. van den Berg, I. van Weperen., S. R. Plissard, E. P. A. M. Bakkers and L. P. Kouwenhoven
More informationPHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS
PHYSICAL ELECTRONICS(ECE3540) CHAPTER 9 METAL SEMICONDUCTOR AND SEMICONDUCTOR HETERO-JUNCTIONS Tennessee Technological University Wednesday, October 30, 013 1 Introduction Chapter 4: we considered the
More informationA Transparent Perovskite Light Emitting Touch-
Supporting Information for A Transparent Perovskite Light Emitting Touch- Responsive Device Shu-Yu Chou, Rujun Ma, Yunfei Li,, Fangchao Zhao, Kwing Tong, Zhibin Yu, and Qibing Pei*, Department of Materials
More informationK D R N Kalubowila, R P Wijesundera and W Siripala Department of Physics, University of Kelaniya, Kelaniya, Sri Lanka ABSTRACT
Proceedings of the Technical Sessions, 31 (2015) 69-75 69 K D R N Kalubowila, R P Wijesundera and W Siripala Department of Physics, University of Kelaniya, Kelaniya, Sri Lanka ABSTRACT Anodic electrodeposition
More informationPhotovoltaic Enhancement Due to Surface-Plasmon Assisted Visible-Light. Absorption at the Inartificial Surface of Lead Zirconate-Titanate Film
Photovoltaic Enhancement Due to Surface-Plasmon Assisted Visible-Light Absorption at the Inartificial Surface of Lead Zirconate-Titanate Film Fengang Zheng, a,b, * Peng Zhang, a Xiaofeng Wang, a Wen Huang,
More informationORGANIC SEMICONDUCTOR 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA)
ORGANIC SEMICONDUCTOR 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) Suvranta Tripathy Department of Physics University of Cincinnati Cincinnati, Ohio 45221 March 8, 2002 Abstract In the last decade
More informationM.J. CONDENSED MATTER VOLUME 4, NUMBER 1 1 DECEMBER 2001
M.J. CONDENSED MATTER VOLUME 4, NUMBER 1 1 DECEMBER 21 Au/n-Si(1) contact homogeneity studied by direct and reverse ballistic electron emission microscopy and spectroscopy A. Chahboun and I. Zorkani L.
More informationElectron Energy, E E = 0. Free electron. 3s Band 2p Band Overlapping energy bands. 3p 3s 2p 2s. 2s Band. Electrons. 1s ATOM SOLID.
Electron Energy, E Free electron Vacuum level 3p 3s 2p 2s 2s Band 3s Band 2p Band Overlapping energy bands Electrons E = 0 1s ATOM 1s SOLID In a metal the various energy bands overlap to give a single
More informationSchottky diodes. JFETs - MESFETs - MODFETs
Technische Universität Graz Institute of Solid State Physics Schottky diodes JFETs - MESFETs - MODFETs Quasi Fermi level When the charge carriers are not in equilibrium the Fermi energy can be different
More informationSUPPLEMENTARY INFORMATION
High-Efficiency Light-Emitting Devices based on Quantum Dots with Tailored Nanostructures Yixing Yang 1, Ying Zheng 1, Weiran Cao 2, Alexandre Titov 1, Jake Hyvonen 1, Jiangeng Xue 2*, Paul H. Holloway
More informationIntroduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1
Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1 ChiiDong Chen Institute of Physics, Academia Sinica chiidong@phys.sinica.edu.tw 02 27896766 Carbon contains 6 electrons: (1s) 2,
More informationSupplementary Information
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A. This journal is The Royal Society of Chemistry 2017 Supplementary Information Enhanced Charge Collection with Passivation of
More informationElectronic Supplementary Information: Synthesis and Characterization of Photoelectrochemical and Photovoltaic Cu2BaSnS4 Thin Films and Solar Cells
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 2017 Electronic Supplementary Information: Synthesis and Characterization of
More informationSupplementary Figures
Supplementary Figures Supplementary Figure 1. AFM profiles of the charge transport and perovskite layers. AFM Image showing the thickness (y axis) of the layer with respect to the horizontal position of
More informationMetal nanoparticle-doped coloured films on glass and polycarbonate substrates
PRAMANA c Indian Academy of Sciences Vol. 65, No. 5 journal of November 2005 physics pp. 931 936 Metal nanoparticle-doped coloured films on glass and polycarbonate substrates S K MEDDA, M MITRA, S DE,
More informationAn account of our efforts towards air quality monitoring in epitaxial graphene on SiC
European Network on New Sensing Technologies for Air Pollution Control and Environmental Sustainability - EuNetAir COST Action TD1105 2 nd International Workshop EuNetAir on New Sensing Technologies for
More informationSupplementary Materials for
advances.sciencemag.org/cgi/content/full/3/9/e1701222/dc1 Supplementary Materials for Moisture-triggered physically transient electronics Yang Gao, Ying Zhang, Xu Wang, Kyoseung Sim, Jingshen Liu, Ji Chen,
More informationIntroduction to X-ray Photoelectron Spectroscopy (XPS) XPS which makes use of the photoelectric effect, was developed in the mid-1960
Introduction to X-ray Photoelectron Spectroscopy (XPS) X-ray Photoelectron Spectroscopy (XPS), also known as Electron Spectroscopy for Chemical Analysis (ESCA) is a widely used technique to investigate
More informationSUPPLEMENTARY INFORMATION
Engineered doping of organic semiconductors for enhanced thermoelectric efficiency G.-H. Kim, 1 L. Shao, 1 K. Zhang, 1 and K. P. Pipe 1,2,* 1 Department of Mechanical Engineering, University of Michigan,
More informationCarbonized Electrospun Nanofiber Sheets for Thermophones
Supporting Information Carbonized Electrospun Nanofiber Sheets for Thermophones Ali E. Aliev 1 *, Sahila Perananthan 2, John P. Ferraris 1,2 1 A. G. MacDiarmid NanoTech Institute, University of Texas at
More informationThe interfacial study on the Cu 2 O/Ga 2 O 3 /AZO/TiO 2 photocathode for water splitting fabricated by pulsed laser deposition
Electronic Supplementary Material (ESI) for Catalysis Science & Technology. This journal is The Royal Society of Chemistry 2017 The interfacial study on the Cu 2 O/Ga 2 O 3 /AZO/TiO 2 photocathode for
More informationQuantum Dots for Advanced Research and Devices
Quantum Dots for Advanced Research and Devices spectral region from 450 to 630 nm Zero-D Perovskite Emit light at 520 nm ABOUT QUANTUM SOLUTIONS QUANTUM SOLUTIONS company is an expert in the synthesis
More information23.0 Review Introduction
EE650R: Reliability Physics of Nanoelectronic Devices Lecture 23: TDDB: Measurement of bulk trap density Date: Nov 13 2006 Classnotes: Dhanoop Varghese Review: Nauman Z Butt 23.0 Review In the last few
More informationConductivity and Semi-Conductors
Conductivity and Semi-Conductors J = current density = I/A E = Electric field intensity = V/l where l is the distance between two points Metals: Semiconductors: Many Polymers and Glasses 1 Electrical Conduction
More informationPHOTOVOLTAICS Fundamentals
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
More informationElectrical control of near-field energy transfer between. quantum dots and 2D semiconductors
Electrical control of near-field energy transfer between quantum dots and 2D semiconductors Supporting Information Dhiraj Prasai, Andrey Klots #, AKM Newaz #, $, J. Scott Niezgoda, Noah J. Orfield, Carlos
More informationSupporting Information
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 2015 Supporting Information Plasmonics-enhanced metal-organic frameworks nanofilms
More informationSupporting Information
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry A. This journal is The Royal Society of Chemistry 2018 Supporting Information A minimal non-radiative recombination loss for efficient
More informationFile name: Supplementary Information Description: Supplementary Figures and Supplementary References. File name: Peer Review File Description:
File name: Supplementary Information Description: Supplementary Figures and Supplementary References File name: Peer Review File Description: Supplementary Figure Electron micrographs and ballistic transport
More informationEffective masses in semiconductors
Effective masses in semiconductors The effective mass is defined as: In a solid, the electron (hole) effective mass represents how electrons move in an applied field. The effective mass reflects the inverse
More information